Patents by Inventor Monica A. Beals

Monica A. Beals has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5369051
    Abstract: A method for forming LOCOS isolation regions which includes the steps of forming a polysilicon buffer layer between the pad oxide layer and the nitride layer and forming a sidewall seal around the perimeter of the active moat regions prior to the field oxidation step. The resulting field oxide isolation region has reduced oxide encroachment into the active moat region.
    Type: Grant
    Filed: August 5, 1992
    Date of Patent: November 29, 1994
    Assignee: Texas Instruments Incorporated
    Inventors: Kalipatnam V. Rao, Joel T. Tomlin, Monica A. Beals
  • Patent number: 5159428
    Abstract: This is a semiconductor device, comprising: a semiconductor body having an isolation region separating at least two active device regions; pad oxide layers disposed on said active regions; polysilicon layers disposed on said pad oxide layers; silicon nitride layers disposed on said polysilicon layers; and a sidewall seal disposed all along the perimeter of the active device regions to seal said active device regions against oxygen diffusion. The resulting field oxide isolation region has reduced oxide encroachment into the active moat region.
    Type: Grant
    Filed: December 5, 1990
    Date of Patent: October 27, 1992
    Assignee: Texas Instruments Incorporated
    Inventors: Kalipatnam V. Rao, Joel T. Tomlin, Monica A. Beals