Patents by Inventor Monica Vigilante

Monica Vigilante has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL
    Publication number: 20190006421
    Abstract: A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.
    Type: Application
    Filed: August 27, 2018
    Publication date: January 3, 2019
    Inventors: Fabio Pellizzer, Michele Magistretti, Cristina Casellato, Monica Vigilante
  • METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL
    Publication number: 20150357563
    Abstract: A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.
    Type: Application
    Filed: August 17, 2015
    Publication date: December 10, 2015
    Inventors: Fabio Pellizzer, Michele Magistretti, Cristina Casellato, Monica Vigilante
  • Method for fabricating a phase-change memory cell
    Patent number: 9111856
    Abstract: A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: August 18, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Michele Magistretti, Cristina Casellato, Monica Vigilante
  • METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL
    Publication number: 20110248233
    Abstract: A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.
    Type: Application
    Filed: December 30, 2008
    Publication date: October 13, 2011
    Inventors: Fabio Pellizzer, Michele Magistretti, Cristina Casellato, Monica Vigilante