Patents by Inventor Monika BHARTI

Monika BHARTI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-voltage semiconductor devices and methods for manufacturing the same
    Patent number: 11081580
    Abstract: A high-voltage semiconductor device includes a semiconductor substrate having a first conductivity type, and a first high-voltage well region disposed in the semiconductor substrate and having a second conductivity type that is opposite to the first conductivity type. The high-voltage semiconductor device also includes a first buried layer disposed on the first high-voltage well region and having the first conductivity type, and a second buried layer and a third buried layer disposed on the first high-voltage well region and having the second conductivity type, wherein the first buried layer is between the second buried layer and the third buried layer. The high-voltage semiconductor device further includes a source region and a drain region disposed on the first buried layer and having the second conductivity type.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: August 3, 2021
    Assignee: Nuvoton Technology Corporation
    Inventors: Gene Sheu, Vivek Ningaraju, Po-An Chen, Shaik Mastanbasheer, Pooja Ravindra Deshmane, Monika Bharti, Syed Neyaz Imam
  • HIGH -VOLTAGE SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
    Publication number: 20200044080
    Abstract: A high-voltage semiconductor device includes a semiconductor substrate having a first conductivity type, and a first high-voltage well region disposed in the semiconductor substrate and having a second conductivity type that is opposite to the first conductivity type. The high-voltage semiconductor device also includes a first buried layer disposed on the first high-voltage well region and having the first conductivity type, and a second buried layer and a third buried layer disposed on the first high-voltage well region and having the second conductivity type, wherein the first buried layer is between the second buried layer and the third buried layer. The high-voltage semiconductor device further includes a source region and a drain region disposed on the first buried layer and having the second conductivity type.
    Type: Application
    Filed: December 14, 2018
    Publication date: February 6, 2020
    Inventors: Gene SHEU, Vivek NINGARAJU, Po-An CHEN, Shaik MASTANBASHEER, Pooja Ravindra DESHMANE, Monika BHARTI, Syed Neyaz IMAM