Patents by Inventor Monika Cornelia Voerckel

Monika Cornelia Voerckel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10461031
    Abstract: According to various embodiments, a method for processing an electronic device may include: forming a patterned hard mask layer over a power metallization layer, the patterned hard mask layer exposing at least one surface region of the power metallization layer; and patterning the power metallization layer by wet etching of the exposed at least one surface region of the power metallization layer.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: October 29, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Petra Fischer, Johanna Schlaminger, Monika Cornelia Voerckel, Peter Zorn
  • Patent number: 10157765
    Abstract: Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: December 18, 2018
    Assignee: Infineon Technologies AG
    Inventors: Gudrun Stranzl, Martin Zgaga, Rainer Leuschner, Bernhard Goller, Bernhard Boche, Manfred Engelhardt, Hermann Wendt, Bernd Noehammer, Karl Mayer, Michael Roesner, Monika Cornelia Voerckel
  • Publication number: 20180358299
    Abstract: According to various embodiments, a method for processing an electronic device may include: forming a patterned hard mask layer over a power metallization layer, the patterned hard mask layer exposing at least one surface region of the power metallization layer; and patterning the power metallization layer by wet etching of the exposed at least one surface region of the power metallization layer.
    Type: Application
    Filed: June 8, 2018
    Publication date: December 13, 2018
    Inventors: Petra Fischer, Johanna Schlaminger, Monika Cornelia Voerckel, Peter Zorn
  • Publication number: 20170076970
    Abstract: Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.
    Type: Application
    Filed: November 23, 2016
    Publication date: March 16, 2017
    Inventors: Gudrun Stranzl, Martin Zgaga, Rainer Leuschner, Bernhard Goller, Bernhard Boche, Manfred Engelhardt, Hermann Wendt, Bernd Noehammer, Karl Mayer, Michael Roesner, Monika Cornelia Voerckel
  • Publication number: 20150147850
    Abstract: Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.
    Type: Application
    Filed: November 25, 2013
    Publication date: May 28, 2015
    Applicant: Infineon Technologies AG
    Inventors: Gudrun Stranzl, Martin Zgaga, Rainer Leuschner, Bernhard Goller, Bernhard Boche, Manfred Engelhardt, Hermann Wendt, Bernd Noehammer, Karl Mayer, Michael Roesner, Monika Cornelia Voerckel