Abstract: The present disclosure pertains to a particulate co-processed pre-formulated excipient composition and methods for producing the same. In particular, the present disclosure provides a particulate co-processed pre-formulated excipient composition for enhancing dissolution rate of poorly soluble active pharmaceutical ingredient, wherein said excipient composition comprises a co-processed mixture of a filler-binder, a glidant, a disintegrant, a solubility enhancer, and a lubricant. The co-processed pre-formulated excipient composition has higher bulk density, bigger particle size, excellent flowability, good physical properties of excipient delivered good quality of tablet in terms tablet hardness, disintegration time and dissolution rate.

Abstract: The present invention relates to a cellulose based self-disintegrating co-processed excipient composition comprising of a combination of cellulose binder, microcrystalline cellulose and cellulose super disintegrant, croscarmellose sodium. The present invention also relates to process of preparing the self-disintegrating excipient composition and its use in pharmaceutical and nutraceutical formulation.

Abstract: The invention deals with multi-states nonvolatile opto-ferroelectric memory element and method of preparing the same thereof. This invention describes multi-states nonvolatile opto-ferroelectric memory element consisting of opto-ferroelectric memory material comprised of Pb1-x(Bi0.5Li0.5)x(Ti1-yZry)O3, wherein x=0.2 to 0.8 and y=0.2 to 0.6, said memory material (PBLZT) photovoltaic ferroelectric material is characterized by a single-phase opto-ferroelectric materials, photovoltaic and multi-states ferroelectric memory material. The invention relates to process of preparing multi-states nonvolatile opto-ferroelectric memory material by solid route, solution-gel process and pulsed laser process. It describes development of multi-states nonvolatile opto-ferroelectric memory material at room temperature. Invention describes a ferroelectric material whose polarization is switched by white light and low power LASER (10-50 mW) with wavelength (405 nm).

Abstract: The invention deals with multi-states nonvolatile opto-ferroelectric memory element and method of preparing the same thereof. This invention describes multi-states nonvolatile opto-ferroelectric memory element consisting of opto-ferroelectric memory material comprised of Pb1-x(Bi0.5Li0.5)x(Ti1-yZry)O3, wherein x=0.2 to 0.8 and y=0.2 to 0.6, said memory material (PBLZT) phtotovoltaic ferroelectric material is characterized by a single-phase opto-ferroelectric materials, photovoltaic and multi-states ferroelectric memory material. The invention relates to process of preparing multi-states nonvolatile opto-ferroelectric memory material by solid route, solution-gel process and pulsed laser process. It describes development of multi-states nonvolatile opto-ferroelectric memory material at room temperature. Invention describes a ferroelectric material whose polarization is switched by white light and low power LASER (10-50 mW) with wavelength (405 nm).