Patents by Inventor Monique Renaud

Monique Renaud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6309904
    Abstract: A method of fabricating an optical integrated circuit comprising at least one etched and buried BRS waveguide coupled to at least one etched but not buried ridge waveguide includes defining an imprint for the two types of guide beforehand, using a common mask, and then defining the two types of guide by successive etching operations.
    Type: Grant
    Filed: June 24, 1999
    Date of Patent: October 30, 2001
    Assignee: Alcatel
    Inventors: Frédéric Pommereau, Philippe Pagnod-Rossiaux, Monique Renaud, Bernard Martin, Roland Mestric
  • Patent number: 5461684
    Abstract: In a digital optical switch an input waveguide and two divergent output waveguides constitute a guide structure. A median gap between the two output waveguides constitutes a guide gap. Electrodes control the refractive indices of the two output waveguides to couple the input waveguide and one or both output waveguides depending on the value of a control signal. The width of the guide gap is increased in input and output transition areas to render the variation of this width more progressive therein. This is achieved by means of a median aperture at the end of the input waveguide and a progressive variation in the inclination of the facing edges of the output waveguides.
    Type: Grant
    Filed: August 29, 1994
    Date of Patent: October 24, 1995
    Assignee: Alcatel N.V.
    Inventors: Jean-Francois Vinchant, Monique Renaud
  • Patent number: 5442723
    Abstract: A guide structure of a strip semiconductor active optical device includes a core structure extending as far as coupling surfaces. It includes at least three high index layers having refractive indices increased relative to that of the surrounding media to increase in these layers the power density of light to be processed, for example amplitude modulated, by the device. The high index layers have compositions such that they can apply this processing in response to electrical excitation and thicknesses greater than those of quantum wells. They are separated by lower refractive index dilutant layers with greater thicknesses such that a single propagation mode of light is guided by the guide structure. This mode has a thickness suited to coupling to an external optical component whilst confining the majority of the power of the light within the thickness of the core structure to favor the processing.
    Type: Grant
    Filed: August 29, 1994
    Date of Patent: August 15, 1995
    Assignee: Alcatel N.V.
    Inventors: Jean-Francois Vinchant, Monique Renaud, Marko Erman