Abstract: Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

Abstract: A method of making a combined sinter-ready silver film and carrier (1) comprises the steps of: a) creating a carrier (2) comprising designed openings (5); b) casting a silver film layer (7) into the designed openings (5), for example casting a silver paste; and c) drying the carrier (2) and silver film layer (7) to form the combined sinter-ready silver film and carrier (1). The carrier (2) may comprise a plastic carrier, which may be created by permanently bonding two plastic films, using a plasma bonding process or using a temperature stable glue. The carrier (2) may comprise a stencil layer (3) and a backing layer (4). The stencil layer (3) may define the designed openings (5). The backing layer (4) may be configured for sealing a bottom of the designed openings (5), wherein at the start of step b), a top of the designed openings (5) may be open for receiving the cast silver film layer (7).

Abstract: A silver film for die attachment in the field of microelectronics, wherein the silver film is a multilayer structure comprising a reinforcing silver foil layer between two layers of sinterable particles. Each layer of sinterable particles comprises a mixture of sinterable silver particles and reinforcing particles. The reinforcing particles comprise glass and/or carbon and/or graphite particles. A method for die attachment using a silver film.

Abstract: A sintering powder comprising: a particulate having a mean longest diameter of less than 10 microns, wherein at least some of the particles forming the particulate comprise a metal at least partially coated with a capping agent. A sintering paste and sintering film comprising the sintering powder. A method for making a sintered joint by sintering the sintering powder, paste, or film in the vicinity of two or more workpieces.

Abstract: A sintering powder comprising: a particulate having a mean longest diameter of less than 10 microns, wherein at least some of the particles forming the particulate comprise a metal at least partially coated with a capping agent. A sintering paste and sintering film comprising the sintering powder. A method for making a sintered joint by sintering the sintering powder, paste, or film in the vicinity of two or more workpieces.

Abstract: Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

Abstract: Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

Abstract: A silver film for die attachment in the field of microelectronics, wherein the silver film is a multilayer structure comprising a reinforcing silver foil layer between two layers of sinterable particles. Each layer of sinterable particles comprises a mixture of sinterable silver particles and reinforcing particles. The reinforcing particles comprise glass and/or carbon and/or graphite particles. A method for die attachment using a silver film.

Abstract: Materials for die attachment such as silver sintering films may include reinforcing, modifying particles for enhanced performance. Methods for die attachment may involve the of such materials.

Abstract: Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

Abstract: A sintering powder comprising: a particulate having a mean longest diameter of less than 10 microns, wherein at least some of the particles forming the particulate comprise a metal at least partially coated with a capping agent. A sintering paste and sintering film comprising the sintering powder. A method for making a sintered joint by sintering the sintering powder, paste, or film in the vicinity of two or more workpieces.

Abstract: A sintering powder comprising: a particulate having a mean longest diameter of less than 10 microns, wherein at least some of the particles forming the particulate comprise a metal at least partially coated with a capping agent. A sintering paste and sintering film comprising the sintering powder. A method for making a sintered joint by sintering the sintering powder, paste, or film in the vicinity of two or more workpieces.

Abstract: Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

Abstract: Materials for die attachment such as silver sintering films may include reinforcing, modifying particles for enhanced performance. Methods for die attachment may involve the of such materials.

Abstract: A sintering powder comprising: a particulate having a mean longest diameter of less than 10 microns, wherein at least some of the particles forming the particulate comprise a metal at least partially coated with a capping agent. A sintering paste and sintering film comprising the sintering powder. A method for making a sintered joint by sintering the sintering powder, paste, or film in the vicinity of two or more workpieces.

Abstract: Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

Abstract: Methods for attachment of a die to a substrate are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate.

Abstract: Methods for die attachment of multichip and single components may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

Abstract: Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.