Patents by Inventor Monroe B. Goldberg

Monroe B. Goldberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for making a brazed lead electrode, and product thereof
    Patent number: 4017266
    Abstract: A process for making a brazed lead electrode workpiece, adapted for use as a component of a semiconductor device, comprises the steps of forming a subassembly of a thermally and electrically conductive metal lead member, a copper/silver-based brazing alloy having a wetting point of at least 450.degree. C, and a refractory metal contact member, and then heating the brazing alloy at least to its wetting point.
    Type: Grant
    Filed: December 19, 1975
    Date of Patent: April 12, 1977
    Assignee: General Instrument Corporation
    Inventors: Monroe B. Goldberg, William B. Voorhis
  • Passivated and encapsulated semiconductors and method of making same
    Patent number: 3996602
    Abstract: A semiconductor assembly having a semiconductor and conductive lead members secured thereto by conductive metal contact members is passivated by a layer of fused particles of non-conductive glass and encapsulated in a layer of non-conductive plastic. The product combines the best characteristics of a glass passivated semiconductor and a plastic encapsulated semiconductor while avoiding the disadvantages of both.
    Type: Grant
    Filed: August 14, 1975
    Date of Patent: December 7, 1976
    Assignee: General Instrument Corporation
    Inventors: Monroe B. Goldberg, William B. Voorhis
  • Process for attaching a lead member to a semiconductor device
    Patent number: 3930306
    Abstract: A thermally and electrically conductive metal lead member is joined to the refractory metal contact member of a semiconductor device using a brazing alloy comprising on a weight basis about 80-89 percent copper, about 5-15 percent silver, and about 4-6 percent phosphorus. The contact member/semiconductor joint may be formed in an inert atmosphere at the same time and at the same temperature as the contact member/lead member joint.
    Type: Grant
    Filed: April 24, 1974
    Date of Patent: January 6, 1976
    Assignee: General Instrument Corporation
    Inventors: Monroe B. Goldberg, William B. Voorhis