Abstract: Described are porous sintered bodies and methods of making porous sintered bodies by additive manufacturing methods.

Abstract: Three-dimensional multi-layer composite structures prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing techniques, wherein a multi-layer structure has layers of at least two different thicknesses and a precision thickness are disclosed herein. In some embodiments, a method includes forming a coarse feedstock layer having a coarse feedstock layer thickness, solidifying a portion of the coarse feedstock layer to form a solidified coarse feedstock layer having a solidified coarse feedstock layer thickness, before or after forming the solidified coarse feedstock layer, forming at least one fine feedstock layer having a fine feedstock layer thickness that is less than the coarse feedstock layer thickness, and solidifying a portion of the at least one fine feedstock layer to form the at least one solidified fine feedstock layer having a solidified fine feedstock layer thickness that is less than the solidified coarse feedstock layer thickness.

Abstract: A method for producing an article and a system associated with the method are provided. The method includes providing a green part, cooling the green part to a temperature below the freezing point of the ink to form a hardened mass and loosely-attached powder particles, and removing the loosely-attached powder particles. The green part includes powder particles, an ink, and optionally a binder. The loosely-attached powder particles removed from the green part may be recycled and reused.

Abstract: A device for cleaning substrates. The device comprises a polymeric pad, a frame body, and a coupling member. The polymeric pad has a top surface and a bottom surface. At least a portion of the frame body extends between the top surface and the bottom surface of the polymeric paid. A coupling member extends upwards from at least a portion of the frame body.

Abstract: A cleaning brush for a semiconductor fabrication process is provided. The cleaning brush includes a core and a brush member. The core includes a circumferential portion and a closed end portion. The circumferential portion surrounds a rotation axis of the cleaning brush and defines an inlet opening for receiving a fluid. The closed end portion is connected to an end of the circumferential portion that is opposite to the inlet opening along the rotation axis. At least one elongated conduit is defined within the core and fluidly communicated with the inlet opening, and the circumferential portion includes a plurality of outlet channels passing therethrough to fluidly communicate with the elongated conduit, the outlet channels being tilted outwardly toward the closed end portion. The brush member is connected to an outer surface of the circumferential portion and covers all of the outlet channels.

Abstract: A high pressure fluid storage device with a pressure sensing and regulating system configured for delivery of vaporized solid and liquid precursor materials at a regulated pressure range. At least some components of the pressure regulating system is contained internally within the storage device.

Abstract: Described is automated glass manufacturing equipment, and in particular to devices known as “takeout holders,” as well as systems that use the takeout holders and methods of making and using the takeout holders.

Abstract: Described are composite adsorption media that contain two or more different types of adsorbent material in binder, that may preferably be prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing methods.

Abstract: The present disclosure provides a module for creating a metal-containing film, including a reactor chamber; an inlet for providing an organo-metallic precursor to the reactor chamber; and an inlet for providing a reactive gaseous species to react with the organo-metallic precursor to form a metal-containing film. The reactive gaseous species includes an element having three to five valence electrons and one or more radicals selected from hydrogen, C1-C3 alkyl, and C1-C3 alkoxyl. The present disclosure further relates to a method of creating the metal-containing film and a semiconductor structure associated therewith.

Abstract: Described are three-dimensional structures that contain metal-organic-framework adsorbent material and that are prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing methods.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, and electrostatic chuck base components prepared by an additive manufacturing technique.

Abstract: Described are three-dimensional multi-layer composite structures prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing techniques, wherein a multi-layer structure has layers of at least two different thicknesses and a precision thickness.

Abstract: A phase-shift reticle for a photolithography process in semiconductor fabrication is provided. The reticle includes a substrate, a reflective structure, a pattern defining layer and a phase shifter. The reflective structure is disposed over the substrate. The pattern defining layer includes a first material and is deposited over the reflective structure. The pattern defining layer comprises a pattern trench. The phase shifter includes a second material and disposed in the pattern trench. A transmittance of the second material is different from a transmittance of the first material.

Abstract: Described are porous sintered metal bodies and methods of making porous sintered metal bodies by additive manufacturing methods.

Abstract: Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integrated into the final MEMS structure and a sacrificial secondary metal that provides structural support for the primary metal component during machining. More specifically, techniques are disclosed to increase the rate of secondary metal deposition between primary metal features in order to prevent voiding in the sacrificial secondary metal and thus enhance structural support of the primary metal during machining.

Abstract: Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integrated into the final MEMS structure and two or more sacrificial secondary metals that provide structural support for the primary metal component during machining. A first secondary metal is thinly plated around the primary metal and over the entire surface of the substrate without using photolithography. A second secondary metal, is then thickly plated over the deposited first secondary metal without using photolithography. Additionally, techniques are disclosed to increase the deposition rate of the first secondary metal between primary metal features in order to prevent voiding and thus enhance structural support of the primary metal during machining.

Abstract: Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integrated into the final MEMS structure and two or more sacrificial secondary metals that provide structural support for the primary metal component during machining. A first secondary metal is thinly plated around the primary metal and over the entire surface of the substrate without using photolithography. A second secondary metal, is then thickly plated over the deposited first secondary metal without using photolithography. Additionally, techniques are disclosed to increase the deposition rate of the first secondary metal between primary metal features in order to prevent voiding and thus enhance structural support of the primary metal during machining.

Abstract: Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integrated into the final MEMS structure and two or more sacrificial secondary metals that provide structural support for the primary metal component during machining. A first secondary metal is thinly plated around the primary metal and over the entire surface of the substrate without using photolithography. A second secondary metal, is then thickly plated over the deposited first secondary metal without using photolithography. Additionally, techniques are disclosed to increase the deposition rate of the first secondary metal between primary metal features in order to prevent voiding and thus enhance structural support of the primary metal during machining.