Abstract: A spiral wound-type separation membrane module and a method for manufacturing the same are provided. The spiral wound-type separation membrane module according to an exemplary embodiment of the present invention is implemented by including an outlet pipe; a filter assembly wound in a spiral wound on the outlet pipe; and an adhesion portion in which part or all of a heat-adhesive yarn wound to surround the outer surface of the filter assembly in the longitudinal direction of the outlet pipe is melted and fixed to the filter assembly. According to the above, the spiral wound-type separation membrane module and the method for manufacturing the same can significantly reduce the defect rate and process time and simultaneously exhibit an eco-friendly effect during disposal after use.

Abstract: The present invention relates to a semiconductor device capable of emitting light upon application of voltage and a method for manufacturing the same, and more particularly to a semiconductor device having a polygonal or circular columnar shape and a method for manufacturing the same. The semiconductor device of the present invention comprises a plurality of semiconductor structures and a connecting support layer that supports the plurality of the semiconductor structures, wherein each of the plurality of the semiconductor structures comprises a P-type first semiconductor layer, an N-type second semiconductor layer, and a light-emitting layer located between the first semiconductor layer and the second semiconductor layer, and forms a column having a polygonal or circular shape.

Abstract: The present invention relates to a semiconductor device, a manufacturing method thereof. More specifically, this invention is related to a chemical etching method in semiconductor device separation process without using dicing or scribing. According to an example of the invention, a method for manufacturing a semiconductor device, the method comprising: forming a light emitting semiconductor device layer that emits light by current injection; and forming at least one metal layer with etch barrier plated thereon on the semiconductor device layer, wherein the at least one metal layer provides mechanical support to the semiconductor device, wherein the etch barrier is plated on the at least one metal layer in a direction that the etch barrier can prevent side wall under-cut when the street lines are separated by wet chemical etching.

Abstract: The present invention relates to a semiconductor device capable of emitting light upon application of voltage and a method for manufacturing the same, and more particularly to a semiconductor device having a polygonal or circular columnar shape and a method for manufacturing the same. The semiconductor device of the present invention comprises a plurality of semiconductor structures and a connecting support layer that supports the plurality of the semiconductor structures, wherein each of the plurality of the semiconductor structures comprises a P-type first semiconductor layer, an N-type second semiconductor layer, and a light-emitting layer located between the first semiconductor layer and the second semiconductor layer, and forms a column having a polygonal or circular shape.