Abstract: A display device having a minimal overall thickness is achieved by receiving a camera in an accommodation space on at least one among upper and lower substrates. The optical affects caused by reflection of light off the camera or its components can be minimized by a special low reflective film provided in the accommodation space.

Abstract: A method of fabricating a semiconductor device may include forming trenches in a substrate to define a fin structure extending in a direction, forming a device isolation layer to fill the trenches, and removing an upper portion of the device isolation layer to expose an upper side surface of the fin structure. The exposing of the upper side surface of the fin structure may include repeatedly performing an etching cycle including a first step and a second step, and an etching rate of the device isolation layer to the fin structure may be higher in the second step than in the first step.

Abstract: A plasma apparatus includes a chuck disposed in a process chamber, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit configured to generate plasma over the chuck, a direct current (DC) power generator applying a DC pulse signal to the chuck, and a sensor monitoring a state of the plasma and providing a sensing signal to the DC power generator. Each period of the DC pulse signal includes a negative pulse duration, a positive pulse duration, and a pulse-off duration. If a signal disturbance of the sensing signal occurs in an nth period of the DC pulse signal, the DC power generator changes a magnitude of a positive pulse and/or a length of the positive pulse duration of an n+1th period of the DC pulse signal, where “n” denotes a natural number.

Abstract: A display is disclosed that may prevent a polarizing layer of a display area from being delaminated from a functional panel by absorbing impact caused by an external force by an adhesive enhancement layer arranged outside the polarizing layer on a color filter substrate and an adhesive layer arranged between a non-display area of a transistor substrate and a light emitting portion.

Abstract: A method of fabricating a semiconductor device may include forming trenches in a substrate to define a fin structure extending in a direction, forming a device isolation layer to fill the trenches, and removing an upper portion of the device isolation layer to expose an upper side surface of the fin structure. The exposing of the upper side surface of the fin structure may include repeatedly performing an etching cycle including a first step and a second step, and an etching rate of the device isolation layer to the fin structure may be higher in the second step than in the first step.

Abstract: A display device having a minimal overall thickness is achieved by receiving a camera in an accommodation space on at least one among upper and lower substrates. The optical affects caused by reflection of light off the camera or its components can be minimized by a special low reflective film provided in the accommodation space.

Abstract: A plasma apparatus includes a process chamber having an inner space, a chuck disposed in the process chamber and having a top surface on which a substrate is loaded, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit generating plasma over the chuck, and a direct current (DC) power generator applying a DC pulse signal to the chuck. A period of the DC pulse signal may include a negative pulse duration during which a negative pulse is applied, a positive pulse duration during which a positive pulse is applied, and a pulse-off duration during which the negative pulse and the positive pulse are turned off. The positive pulse duration is between the negative pulse duration and the pulse-off duration. The pulse-off duration may comprise a voltage having a lower magnitude than the voltage of the positive pulse, such as a ground voltage.

Abstract: A display is disclosed that may prevent a polarizing layer of a display area from being delaminated from a functional panel by absorbing impact caused by an external force by an adhesive enhancement layer arranged outside the polarizing layer on a color filter substrate and an adhesive layer arranged between a non-display area of a transistor substrate and a light emitting portion.

Abstract: A plasma apparatus includes a chuck disposed in a process chamber, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit configured to generate plasma over the chuck, a direct current (DC) power generator applying a DC pulse signal to the chuck, and a sensor monitoring a state of the plasma and providing a sensing signal to the DC power generator. Each period of the DC pulse signal includes a negative pulse duration, a positive pulse duration, and a pulse-off duration. If a signal disturbance of the sensing signal occurs in an nth period of the DC pulse signal, the DC power generator changes a magnitude of a positive pulse and/or a length of the positive pulse duration of an n+1th period of the DC pulse signal, where “n” denotes a natural number.

Abstract: A plasma apparatus includes a process chamber having an inner space, a chuck disposed in the process chamber and having a top surface on which a substrate is loaded, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit generating plasma over the chuck, and a direct current (DC) power generator applying a DC pulse signal to the chuck. A period of the DC pulse signal may include a negative pulse duration during which a negative pulse is applied, a positive pulse duration during which a positive pulse is applied, and a pulse-off duration during which the negative pulse and the positive pulse are turned off. The positive pulse duration is between the negative pulse duration and the pulse-off duration. The pulse-off duration may comprise a voltage having a lower magnitude than the voltage of the positive pulse, such as a ground voltage.

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor device may include a semiconductor element disposed on a substrate and including an insulating layer and a gate electrode, a doped region having a first conductivity-type on the substrate, a conductive interconnection electrically connected to the gate electrode, and a first contact plug having a second conductivity-type and electrically connecting the conductive interconnection and the doped region to each other and constituting a Zener diode by junction with the doped region.

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor device may include a semiconductor element disposed on a substrate and including an insulating layer and a gate electrode, a doped region having a first conductivity-type on the substrate, a conductive interconnection electrically connected to the gate electrode, and a first contact plug having a second conductivity-type and electrically connecting the conductive interconnection and the doped region to each other and constituting a Zeiler diode by junction with the doped region.

Abstract: A contact-type electric capacitive displacement sensor includes a stationary element having a stationary plate, a stationary conductive pattern formed on the stationary plate and an insulation film coated on the stationary plate and a displaceable element having a displaceable plate, a displaceable conductive pattern formed on the displaceable plate and an insulation film coated on the displaceable plate. The stationary and the displaceable conductive patterns have a cyclic pattern of conductor to thereby produce a variation of capacitance therebetween when moving relative to each other.

Abstract: A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.

Abstract: A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.

Abstract: A contact-type electric capacitive displacement sensor includes a stationary element having a stationary plate, a stationary conductive pattern formed on the stationary plate and an insulation film coated on the stationary plate and a displaceable element having a displaceable plate, a displaceable conductive pattern formed on the displaceable plate and an insulation film coated on the displaceable plate. The stationary and the displaceable conductive patterns have a cyclic pattern of conductor to thereby produce a variation of capacitance therebetween when moving relative to each other.

Abstract: A capacitive motion sensor includes a primary plate including a primary pattern replicated periodically, a secondary plate including a plurality of pattern regions with an insulated region inserted there between, wherein each of the pattern regions has a secondary pattern replicated periodically, a signal source for sending a plate input signal to the primary plate, and a displacement measuring unit for receiving a plurality of plate output signals from the secondary plate to measure a displacement of a moving one of the plates with respect to the other one of the plates. The primary plate is arranged in parallel with the secondary plate in such a manner that the primary pattern is confronted with the secondary pattern and the pattern regions of the secondary plate are arranged in a two-dimensional array.

Abstract: A capacitive motion sensor includes a primary plate including a primary pattern replicated periodically, a secondary plate including a plurality of pattern regions with an insulated region inserted therebetween, wherein each of the pattern regions has a secondary pattern replicated periodically, a signal source for sending a plate input signal to the primary plate, and a displacement measuring unit for receiving a plurality of plate output signals from the secondary plate to measure a displacement of a moving one of the plates with respect to the other one of the plates.