Abstract: A method and process for treating wood. The steps include preparing isocyanate-based reactive prepolymer resins for impregnation, impregnating wood with these impregnation resins, curing the impregnated wood at elevated temperatures, preparing isocyanate resin-based coating materials and applying these coating materials on the cured impregnated wood and curing the coatings at room or elevated temperatures. The resulting treated wood has substantially improved de-contaminability of the chemical warfare agent VX both initially and after long exposure to degradation effects from sunlight.

Abstract: A method and process for treating wood. The steps include preparing isocyanate-based reactive prepolymer resins for impregnation, impregnating wood with these impregnation resins, curing the impregnated wood at elevated temperatures, preparing isocyanate resin-based coating materials and applying these coating materials on the cured impregnated wood and curing the coatings at room or elevated temperatures.

Abstract: A word line driving circuit for use in a semiconductor memory device having a first supply voltage terminal to which a pumping voltage higher than a supply voltage supplied from the exterior of a chip is applied and a second supply voltage terminal to which a ground voltage is applied includes a decoding circuit connected between the first supply voltage terminal and second supply voltage terminal, for receiving a decoded row address, a precharge circuit connected to an output terminal of the decoding circuit, a transfer circuit for receiving an output signal of the decoding circuit and a word line boosting signal, and a word line output circuit connected between the first supply voltage terminal and second supply voltage terminal, for driving a word line.

Abstract: An intermediate Dc voltage generator providing low standby current. The present invention is a CMOS-based integrated circuit that generates a reference voltage level. The present invention accomplishes this task while also minimizing power consumption allowing application for portable computers or other battery-operated devices. The present invention replaces the second stage transistors of the prior art with transistors that have channel lengths greater than the channel lengths of the first stage transistors. This increases the turn on voltage of the second stage transistors. In addition, the channel width of the second stage transistors is less than the channel width of the first stage transistors further increasing turn on voltage. In this way, the second stage transistors are off, reducing the switching current and standby current contributed by the driver transistors at second stage, and providing intermediate level voltage references.

Abstract: In a selecting circuit for a memory operating mode, the circuit has a mode enable pulse generator which produces a short pulse for a mode enable pulse. A mode selecting clock generator which receives a mode enable pulse and selects a memory operating mode. The number of the mode selecting clock generator is determined by the number of memory operating mode to be used. A fuse, coupled with each of the mode selecting clock generators, is out when the corresponding mode selecting generator is selected and hence produces a mode selecting signal.