Abstract: Provided are a method for performing optical proximity correction (OPC) of improving an accuracy of a mask image by reflecting efficiently a mask topography effect or a coupling effect between edges of a pattern, and a method of manufacturing a mask by using OPC. The method for performing OPC includes: extracting edges for a layout of a pattern on a mask; extracting edge pairs in which widths between adjacent edges among the edges are equal to or less than a certain distance; generating a coupling edge for each of the edge pairs; generating a first mask image by applying an edge filter to the edges; and correcting the first mask image by applying a coupling filter to the coupling edge.

Abstract: A method of fabricating a semiconductor device includes designing a layout, performing an optical proximity correction (OPC) process to correct the designed layout, fabricating a first photomask using the corrected designed layout, and forming patterns on a substrate using the first photomask. The OPC process includes generating an OPC model and correcting the designed layout using the generated OPC model. The generation of the OPC model includes rasterizing a planar image of an actual pattern to obtain first label data, rasterizing a simulation image of a simulation pattern to obtain second label data, the simulation pattern being obtained using the OPC model, in which a parameter set including process parameters is set, comparing the first label data with the second label data to obtain comparison data, and correcting the process parameters of the parameter set, based on the comparison data.

Abstract: A method of fabricating a mask, the method including performing first optical proximity correction on first segments, obtaining a correspondence relationship between a feature of each of the first segments defined based on optical characteristics of a mask and an aperture and a bias value associated with each of the first segments, performing second optical proximity correction on second segments, and fabricating a mask based on a result of the second optical proximity correction. A feature of each of the second segments is obtained based on optical characteristics of a mask and the aperture. A bias value, that is obtained to correspond to the feature of each of the second segments based on the correspondence relationship, is allocated as an initial bias value to each of the second segments.

Abstract: A method for rasterizing a mask layout includes driving an image converter to obtain a raster image of the mask layout. The raster image is obtained by providing a pattern from the mask layout on a grid, obtaining grid points surrounding an edge of the pattern, constructing a path on the pattern which extends from the edge toward adjacent edges of the pattern, and allocating a raster value to each of the grid points. The raster value corresponds to an overlap area between a pixel, having a center located on one of the grid points, and the pattern having a boundary limited by the path.

Abstract: A mask optimization method for optimizing a target mask used for a partial coherent system including a plurality of spatial filters is provided. The mask optimization method includes obtaining a trainer mask that is an optimized sample mask by performing a mask optimization on a sample mask, generating a mask optimization estimation model by performing a pixel-based learning using, as a feature vector of each of pixels of the trainer mask, partial signals of each of the pixels of the trainer mask respectively determined based on the spatial filters and using, as a target value, a degree of overlap between each of the pixels and a mask polygon of the trainer mask, and performing a mask optimization on the target mask using the mask optimization estimation model.

Abstract: A method of fabricating a semiconductor device includes designing a layout, performing an optical proximity correction (OPC) process to correct the designed layout, fabricating a first photomask using the corrected layout, and forming patterns on a substrate using the first photomask. The OPC process includes generating an OPC model and correcting the designed layout using the generated OPC model. The generation of the OPC model includes rasterizing a planar image of an actual pattern to obtain first label data, rasterizing a simulation image of a simulation pattern to obtain second label data, the simulation pattern being obtained using the OPC model, in which a parameter set including process parameters is set, comparing the first label data with the second label data to obtain comparison data, and correcting the process parameters of the parameter set, based on the comparison data.

Abstract: A mask fabricating method includes dividing an outline of a design layout into segments, setting comparison areas with respect to an evaluation point corresponding to each of the segments, for each segment, calculating an overlapping area between the design layout and each of the comparison areas, classifying the segments into groups based on the calculated overlapping areas, wherein segments having a characteristic of the same overlapping area are included in a first group, calculating bias values for each of the segments, obtaining a representative bias value for each group, for each group, assigning the representative bias value obtained for that group to each of its segments, updating the design layout based on the segments with their assigned representative bias values, and fabricating a mask based on the updated design layout.

Abstract: A mask optimization method for optimizing a target mask used for a partial coherent system including a plurality of spatial filters is provided. The mask optimization method includes obtaining a trainer mask that is an optimized sample mask by performing a mask optimization on a sample mask, generating a mask optimization estimation model by performing a pixel-based learning using, as a feature vector of each of pixels of the trainer mask, partial signals of each of the pixels of the trainer mask respectively determined based on the spatial filters and using, as a target value, a degree of overlap between each of the pixels and a mask polygon of the trainer mask, and performing a mask optimization on the target mask using the mask optimization estimation model.

Abstract: A method for rasterizing a mask layout includes driving an image converter to obtain a raster image of the mask layout. The raster image is obtained by providing a pattern from the mask layout on a grid, obtaining grid points surrounding an edge of the pattern, constructing a path on the pattern which extends from the edge toward adjacent edges of the pattern, and allocating a raster value to each of the grid points. The raster value corresponds to an overlap area between a pixel, having a center located on one of the grid points, and the pattern having a boundary limited by the path.

Abstract: A method of fabricating a mask, the method including performing first optical proximity correction on first segments, obtaining a correspondence relationship between a feature of each of the first segments defined based on optical characteristics of a mask and an aperture and a bias value associated with each of the first segments, performing second optical proximity correction on second segments, and fabricating a mask based on a result of the second optical proximity correction. A feature of each of the second segments is obtained based on optical characteristics of a mask and the aperture. A bias value, that is obtained to correspond to the feature of each of the second segments based on the correspondence relationship, is allocated as an initial bias value to each of the second segments.

Abstract: A mask fabricating method includes dividing an outline of a design layout into segments, setting comparison areas with respect to an evaluation point corresponding to each of the segments, for each segment, calculating an overlapping area between the design layout and each of the comparison areas, classifying the segments into groups based on the calculated overlapping areas, wherein segments having a characteristic of the same overlapping area are included in a first group, calculating bias values for each of the segments, obtaining a representative bias value for each group, for each group, assigning the representative bias value obtained for that group to each of its segments, updating the design layout based on the segments with their assigned representative bias values, and fabricating a mask based on the updated design layout.

Abstract: Provided are methods of forming patterns of wafers using self-aligned double patterning processes. The methods include preparing an initial layout having a first design pattern, a second design pattern, and a third design pattern disposed between the first design pattern and the second design pattern, extracting a first sub-layout including the first design pattern and a second sub-layout including the second design pattern from the initial layout using a computer, forming a first modified sub-layout including a first modified design pattern obtained by modifying the first design pattern of the first sub-layout using the computer, generating a modified layout including the first modified sub-layout and the second sub-layout using the computer, and performing a double patterning process using the modified layout.

Abstract: An optical proximity correction modeling method for predicting a topography effect due to a pattern stack structure that includes a first material pattern, a second material pattern, and a boundary region between the first material pattern and the second material pattern. The method includes generating a first region filter that corresponds to the first material pattern, a second region filter that corresponds to the second material pattern, and an edge function corresponding to the boundary region; generating a bulk image signal from a layout using the first region filter and the second region filter; generating an edge image signal from the layout using the edge function, a characteristic kernel that represents characteristics of the boundary region, the first region filter, and the second region filter; and generating a final model signal from the bulk image signal and the edge image signal.

Abstract: Provided are methods of forming patterns of wafers using self-aligned double patterning processes. The methods include preparing an initial layout having a first design pattern, a second design pattern, and a third design pattern disposed between the first design pattern and the second design pattern, extracting a first sub-layout including the first design pattern and a second sub-layout including the second design pattern from the initial layout using a computer, forming a first modified sub-layout including a first modified design pattern obtained by modifying the first design pattern of the first sub-layout using the computer, generating a modified layout including the first modified sub-layout and the second sub-layout using the computer, and performing a double patterning process using the modified layout.

Abstract: A method of designing a pattern layout includes defining one shot area including a plurality of chip areas, generating an initial common layout in the plurality of chip areas, primarily correcting the initial layout to form a primary corrected layout, and secondarily correcting the primary corrected layout independently to form a plurality of secondary corrected layouts.

Abstract: A block management method for OPC model calibration includes calculating differences in several different optical functions between first patterns of a first mask and patterns of a second mask corresponding to the first patterns but differing therefrom by a predetermined bias, selecting one or more of the optical functions based on the calculated differences, clustering data of variations in the values of the calculated differences in the selected ones of the optical functions, selecting respective ones of the first patterns in consideration of how the data clusters, and designating the selected first patterns as test patterns.

Abstract: An optical proximity correction modeling method for predicting a topography effect due to a pattern stack structure that includes a first material pattern, a second material pattern, and a boundary region between the first material pattern and the second material pattern. The method includes generating a first region filter that corresponds to the first material pattern, a second region filter that corresponds to the second material pattern, and an edge function corresponding to the boundary region; generating a bulk image signal from a layout using the first region filter and the second region filter; generating an edge image signal from the layout using the edge function, a characteristic kernel that represents characteristics of the boundary region, the first region filter, and the second region filter; and generating a final model signal from the bulk image signal and the edge image signal.

Abstract: A method of designing a pattern layout includes defining one shot area including a plurality of chip areas, generating an initial common layout in the plurality of chip areas, primarily correcting the initial layout to form a primary corrected layout, and secondarily correcting the primary corrected layout independently to form a plurality of secondary corrected layouts.

Abstract: A method of forming a layout of a photomask includes receiving a layout of a mask pattern, obtaining image parameters of a two-dimensional (2D) layout mask from a simulation, obtaining image parameters of a three-dimensional (3D) layout mask from a simulation, and obtaining differences between the image parameters of the 2D and 3D masks. The differences between the image parameters of the 2D and 3D masks can be compensated by convolving a probability function with respect to an open area, represented by a visible kernel function, with a mask function to produce a first function, convolving a probability function with respect to a blocked area, represented by a visible kernel function, with the mask function to produce a second function, and summing the first function and the second function to produce a compensated vector. The layout of the mask pattern can be corrected using the compensated vector.

Abstract: A block management method for OPC model calibration includes calculating differences in several different optical functions between first patterns of a first mask and patterns of a second mask corresponding to the first patterns but differing therefrom by a predetermined bias, selecting one or more of the optical functions based on the calculated differences, clustering data of variations in the values of the calculated differences in the selected ones of the optical functions, selecting respective ones of the first patterns in consideration of how the data clusters, and designating the selected first patterns as test patterns.