Abstract: A lithium complex oxide includes a mixture of first particles of n1 (n1>40) aggregated primary particles and second particles of n2 (n2?20) aggregated primary particles, the lithium complex oxide represented by Chemical Formula 1 and having FWHM (deg., 2?) of 104 peak in XRD, defined by a hexagonal lattice having R-3m space group, in a range of Formula 1: LiaNixCoyMnzM1-x-y-zO2,??[Chemical Formula 1] where M is selected from: B, Ba, Ce, Cr, F, Mg, Al, Cr, V, Ti, Fe, Zr, Zn, Si, Y, Nb, Ga, Sn, Mo, W, P, Sr, and any combination thereof, 0.9?a?1.3, 0.6?x?1.0, 0.0?y?=0.4, 0.0?z?0.4, and 0.0?1-x-y-z?0.4, ?0.025?FWHM(104)?{0.04+(xfirst particle?0.6)×0.25}?0.025,??[Formula 1] where FWHM(104) is represented by Formula 2, FWHM(104)={(FWHMChemical Formula 1 powder(104)?0.1×mass ratio of second particles)/mass ratio of first particles}?FWHMSi powder (220).

Abstract: A method of transforming a degree of freedom (DoF) in a multiple sensorial media (mulsemedia) system includes detecting, by a motion detector, a motion of an object to which motion effects are to be provided; calculating, by a motion proxy calculator, a motion proxy corresponding to the motion of the object; and transforming, by a transformer, the motion proxy into a motion command implementable within a motion range of a motion platform.

Abstract: The present invention relates to a positive electrode active material and a lithium secondary battery using a positive electrode containing the positive electrode active material. More particularly, the present invention relates to a positive electrode active material that is able to solve a problem of increased resistance according to an increase in Ni content by forming a charge transport channel in a lithium composite oxide and a lithium secondary battery using a positive electrode containing the positive electrode active material.

Abstract: A vehicle includes a navigation device, and a controller electrically connected to the navigation device, wherein the controller is configured to determine a first speed of the vehicle based on a main line speed limit of a road on which the vehicle is traveling, wherein the main line speed limit is included in navigation information output by the navigation device, determine a second speed for decelerating the vehicle to a predetermined speed when the vehicle is positioned at a target point of a curved lane based on an arc length from a branching point of the road to the curved lane, which is determined based on the predetermined speed and a predetermined allowable maximum deceleration amount in the curved lane in route information included in the navigation information and the navigation information, and determine the first speed or the second speed as a control target speed of the vehicle at the branching point.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: A SAW filter with an antenna and a transmission terminal includes: a plurality of series resonator groups which are connected in series between the antenna and the transmission terminal; a plurality of parallel resonator groups which are connected in parallel between two neighbor series resonator groups among the plurality of series resonator groups; a parallel inductor which is connected in parallel with the series resonator group adjacent to the antenna; and a series inductor which is connected to in series with some parallel resonator groups among the plurality of parallel resonator groups. The SAW filter has high durability in which even though high power is applied to the filter together with the wide pass band, the filter is not damaged.

Abstract: To manufacture an integrated circuit device, a diffusion buffer layer and a carbon-containing layer are sequentially formed on a plurality of fin-type active regions formed in a substrate. A carbon-containing mask pattern is formed to have an opening exposing a portion of the diffusion buffer layer by etching the carbon-containing layer using an etching gas including an oxygen atom while the diffusion buffer layer is blocking oxygen from diffusing into the fin-type active regions. Impurity ions are implanted into some fin-type active regions through the opening and the diffusion buffer layer using the carbon-containing mask pattern as an ion-implantation mask, the some fin-type active regions being selected from among the plurality of fin-type active regions.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: Provided is a fuel cell stack structure. The fuel cell stack structure includes first and second cell modules and first and second separation plates. In each of the first and second cell modules, one or more fuel cells generating electricity are stacked, and each of the fuel cells includes an electrolyte layer, and a cathode layer and an anode layer formed on both surfaces of the electrolyte layer, respectively, and generates electricity. The first and second separation plates are electrically connected to the first and second cell modules, respectively, and each separation plate has an air hole and a fuel hole at edges to provide an air including oxygen and a fuel gas including hydrogen to the cathode layer and the anode layer, respectively. At least one separation plate has a sealing unit for sealing the air hole and the fuel hole, and has a protruded convex at a different part from the sealing unit to improve an electrical contact with the other separation plate.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: To manufacture an integrated circuit device, a diffusion buffer layer and a carbon-containing layer are sequentially formed on a plurality of fin-type active regions formed in a substrate. A carbon-containing mask pattern is formed to have an opening exposing a portion of the diffusion buffer layer by etching the carbon-containing layer using an etching gas including an oxygen atom while the diffusion buffer layer is blocking oxygen from diffusing into the fin-type active regions. Impurity ions are implanted into some fin-type active regions through the opening and the diffusion buffer layer using the carbon-containing mask pattern as an ion-implantation mask, the some fin-type active regions being selected from among the plurality of fin-type active regions.

Abstract: An integrated circuit device is manufactured by a method including forming a stacked mask structure including a carbon-containing film and a silicon-containing organic anti-reflective film is on a substrate, forming a silicon-containing organic anti-reflective pattern by etching the silicon-containing organic anti-reflective film, and forming a composite mask pattern including a carbon-containing mask pattern and a profile control liner lining interior surfaces of the carbon-containing mask pattern by etching the carbon-containing film while using the silicon-containing organic anti-reflective pattern as an etch mask. Ions are implanted into the substrate through a plurality of spaces defined by the composite mask pattern.

Abstract: An integrated circuit device is manufactured by a method including forming a stacked mask structure including a carbon-containing film and a silicon-containing organic anti-reflective film is on a substrate, forming a silicon-containing organic anti-reflective pattern by etching the silicon-containing organic anti-reflective film, and forming a composite mask pattern including a carbon-containing mask pattern and a profile control liner lining interior surfaces of the carbon-containing mask pattern by etching the carbon-containing film while using the silicon-containing organic anti-reflective pattern as an etch mask. Ions are implanted into the substrate through a plurality of spaces defined by the composite mask pattern.

Abstract: Disclosed is a solid oxide fuel cell stack. The solid oxide fuel cell stack includes a unit cell, a cell frame configured to support an edge of the unit cell, a interconnecting member disposed under the cell frame, a sealing member disposed between the cell frame and the interconnecting member, and a spacer member configured to uniformly maintain an interval between the cell frame and the interconnecting member. The spacer member is disposed at an area between the cell frame and the interconnecting member, which is not sealed by the sealing member, and formed of a mica or insulating ceramic.

Abstract: A semiconductor device includes a stressor and an insulating pattern. A device isolation layer is formed to define an active area on a substrate. A first gate electrode is formed on the active area. A second gate electrode is formed on the device isolation layer. A trench is formed in the active area between the first gate electrode and the second gate electrode. A stressor is formed in the trench. A cavity formed between the stressor and the device isolation layer and adjacent to the second gate electrode is disposed. An insulating pattern is formed in the cavity.

Abstract: Disclosed is a connector for a solid oxide fuel cell, which electrically connects tubular solid oxide fuel cells to each other. The connector includes a conductive body part having a first electrode contact groove and a second electrode contact groove. A first electrode contact part is formed on the top surface of the body part to receive at least a portion of an exposed first electrode portion and second electrode portion of a first solid oxide fuel cell, and is electrically connected to the first electrode of the first solid oxide fuel cell. A second electrode contact part is formed at the bottom surface of the body part so as to receive at least a portion of exposed first electrode portion and second electrode portion of a second solid oxide fuel cell, and is electrically connected to the second electrode of the second solid oxide fuel cell.

Abstract: Disclosed herein are a system for managing network traffic by using monitoring and filtering policies, including: a network traffic managing device to manage network traffic by (i) creating a monitoring policy and a filtering policy and (ii) transmitting the created monitoring policy and the created filtering policy to a user terminal device; and a traffic control device to detect packets generated in one or more applications of the user terminal device, according to the one or more applications or one or more destination addresses based on the monitoring policy received from the network traffic managing device, create and transmit traffic statistical information on the detected packets to the network traffic managing device, and filter the packets according to the filtering policy received from the network traffic managing device at a kernel area of the user terminal device.

Abstract: An apparatus for testing a thyristor valve includes: a current source circuit that provides an electric current when a thyristor valve as a test target is turned on; a voltage source circuit that provides a reverse voltage or a forward voltage when the thyristor valve is turned off; and a first auxiliary valve provided between a connection point between the thyristor valve and the voltage source circuit and the current source circuit, and that insulates the current source circuit from the voltage source circuit to protect the current source circuit from a high voltage of the voltage source circuit.

Abstract: A semiconductor device includes a stressor and an insulating pattern. A device isolation layer is formed to define an active area on a substrate. A first gate electrode is formed on the active area. A second gate electrode is formed on the device isolation layer. A trench is formed in the active area between the first gate electrode and the second gate electrode. A stressor is formed in the trench. A cavity formed between the stressor and the device isolation layer and adjacent to the second gate electrode is disposed. An insulating pattern is formed in the cavity.