Patents by Inventor Moon-hee Lee
Moon-hee Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090045507Abstract: Methods for forming flip chip interconnection, in which the bump interconnect is defined at least in part by an underfill. The underfill includes a material that is thermally cured; that is, raising the temperature of the underfill material can result in progressive curing of the underfill through stages including a gel stage and a fully cured stage. According to the invention, during at least an early stage in the process the semiconductor chip is carried by a thermode, which is employed to control the temperature of the assembly in a specified way. Also, flip chip interconnections and flip chip packages made according to the methods of invention.Type: ApplicationFiled: May 15, 2006Publication date: February 19, 2009Applicant: STATS ChipPAC Ltd.Inventors: Rajendra D. Pendse, Marcos Karnezos, Kyung-Moon Kim, Koo Hong Lee, Moon Hee Lee, Orion Starr
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Patent number: 7488688Abstract: A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber.Type: GrantFiled: November 29, 2004Date of Patent: February 10, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-pil Chung, Kyu-whan Chang, Sun-jung Lee, Kun-tack Lee, Im-soo Park, Kwang-wook Lee, Moon-hee Lee
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Publication number: 20080292600Abstract: This present application describes a therapeutic agent for treating acute or chronic graft-versus-host disease using clonal marrow stem cells (cMSCs) as active ingredient.Type: ApplicationFiled: May 27, 2008Publication date: November 27, 2008Inventors: Sun Uk SONG, Moon Hee Lee, Chul Soo Kim
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Publication number: 20080030112Abstract: Provided is a display module cabinet having the slim front frame width and improved design and keeping strength against breakage. In addition, provided is the cabinet having the elegant rear cover, which reduces costs and time in assembling the display device. The cabinet includes a front cover and a rear cover. The front cover includes a front frame portion defining an opening and a side frame portion extended backward from the front frame portion and including a thick portion and a thin portion that are sequentially formed. The rear cover includes a rear portion and a peripheral portion extended forward from the rear portion and including a thick portion and a thin portion that are sequentially formed. A protruding portion is extended backward from the thick portion of the front cover so as to be interposed between the thin portion of the rear cover and the display module.Type: ApplicationFiled: March 9, 2007Publication date: February 7, 2008Inventors: Moon Hee Lee, Jong Hwa Kim, Kum Young Yun, Chang Sub Kim, Ho Keun Jeon, Jae Ho Kim, Jong Man Park
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Patent number: 7141123Abstract: A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.Type: GrantFiled: January 20, 2004Date of Patent: November 28, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Moon-hee Lee, Kun-tack Lee, Woo-gwan Shim, Jong-ho Chung
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Publication number: 20050087893Abstract: A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber.Type: ApplicationFiled: November 29, 2004Publication date: April 28, 2005Inventors: Seung-pil Chung, Kyu-whan Chang, Sun-jung Lee, Kun-tack Lee, Im-soo Park, Kwang-wook Lee, Moon-hee Lee
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Patent number: 6844229Abstract: A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed.Type: GrantFiled: October 31, 2001Date of Patent: January 18, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Moon-hee Lee, Woo-gwan Shim, Hyung-ho Ko, Jong-ho Chung
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Publication number: 20040144401Abstract: A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.Type: ApplicationFiled: January 20, 2004Publication date: July 29, 2004Inventors: Moon-hee Lee, Kun-tack Lee, Woo-gwan Shim, Jong-ho Chung
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Patent number: 6701942Abstract: A cleaning apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.Type: GrantFiled: December 12, 2001Date of Patent: March 9, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Moon-hee Lee, Kun-tack Lee, Woo-gwan Shim, Jong-ho Chung
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Publication number: 20020170586Abstract: A cleaning apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.Type: ApplicationFiled: December 12, 2001Publication date: November 21, 2002Inventors: Moon-hee Lee, Kun-tack Lee, Woo-gwan Shim, Jong-ho Chung
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Publication number: 20020140018Abstract: A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed.Type: ApplicationFiled: October 31, 2001Publication date: October 3, 2002Applicant: Samsung Electronics Co., Ltd.Inventors: Moon-hee Lee, Woo-gwan Shim, Hyung-ho Ko, Jong-ho Chung
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Patent number: 6171405Abstract: Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboronic acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboronic acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.Type: GrantFiled: December 20, 1999Date of Patent: January 9, 2001Assignee: Samsung Electronics Co., Ltd.Inventor: Moon-hee Lee
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Patent number: 6162671Abstract: Disclosed is a method of forming storage cell capacitors for use in dynamic random access memories, which comprises, after sequentially depositing a reaction barrier layer and a platinum layer on top of a contact plug which formed on a semiconductor substrate having a node, wet etching the reaction barrier layer to form lateral recesses underneath edges of the platinum layer, and forming sidewall spacer in the lateral recesses and underneath the platinum layer. Also, according to an another embodiment of the invention, a method comprise two important features, one is to surround sidewalls of a reaction barrier layer with an oxide layer, and the other is to form a platinum layer, serving as a storage node electrode of a capacitor, having an inclined plane of more than 80 degrees. The upper portion of the platinum layer has a steeply-sloped pattern of more than 80.degree.Type: GrantFiled: December 7, 1998Date of Patent: December 19, 2000Assignee: Samsung Electronics, Co., Ltd.Inventors: Moon-Hee Lee, Jae-Inh Song, Kyu-Hwan Chang, Chang-Lyong Song
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Patent number: 6043206Abstract: Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboric acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboric acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.Type: GrantFiled: December 14, 1998Date of Patent: March 28, 2000Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-inh Song, Moon-hee Lee, Heung-soo Park, Young-bum Koh