Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

Abstract: An anode active material for a secondary battery according to an embodiment of the disclosed technology includes an anode current collector, a first anode active material layer on at least one surface of the anode current collector and including a graphite-based active material and a silicon-based active material doped with a metal element, and a second anode active material layer on the first anode active material layer and including a porous structure. The porous structure includes a carbon-based particle having pores and a silicon-containing coating formed inside the pores or on a surface of the carbon-based particle.

Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

Abstract: Disclosed herein is a method for producing a cyst-expressed transgenic animal using a PDK2 gene. The production method comprises preparing a PKD2 protein expression vector, inserting the expression vector into the nucleus of a fertilized egg to produce a PKD2 expression vector-containing fertilized egg, and transplanting the produced fertilized egg into the uterus of a surrogate mother. According to the invention disclosed herein, there is provided a method for producing transgenic animals, in which cysts are expressed only by the overexpression of the PKD2 gene. Also, transgenic mice are provided which can be effectively used in the investigation of cyst expression mechanisms and cyst control systems.