Abstract: A positive electrode active material including a first lithium composite oxide particle including a secondary particle formed by aggregation of one or more primary particles, and a coating oxide occupying at least a part of at least one of surfaces of the secondary particle, grain boundaries between the primary particles, or surfaces of the primary particles, the positive electrode active material satisfying an equation of 1.3?a/b?3.0, wherein a represents a max peak intensity at 2theta=44.75° to 44.80° and b represents a max peak intensity at 2theta=45.3° to 45.6° in X-ray diffraction (XRD) analysis using Cu K? radiation.

Abstract: Disclosed is a bulk block for manufacturing a prosthesis having high aesthetics and processability required for one-day dental prosthetic materials, which is a dental composite bulk block comprising a glass ceramic matrix and a polymer, wherein the glass ceramic matrix consists of an amorphous glass matrix and a crystalline phase dispersed in the glass matrix, the crystalline phase comprises as a main crystalline phase at least one selected from a leucite crystalline phase and a lithium disilicate crystalline phase, and has an average particle diameter of 0.01-1.0 ?m, and the polymer is included in an amount of 20-40 wt % with respect to the weight of the total bulk block. The bulk block has the advantages of improved mechanical properties, being capable of preventing microleakage, exhibiting excellent aesthetics, and enabling machining.

Abstract: Provided is a method for preparing an oligomer including: supplying a monomer stream and a solvent stream to a reactor to perform an oligomerization reaction to prepare a reaction product; supplying a discharge stream from the reactor including the reaction product to a separation device and supplying a lower discharge stream from the separation device to a settling tank; adding an organic flocculant to the settling tank to settle and remove a polymer and supplying the lower discharge stream from the separation device from which the polymer is removed to a high boiling point separation column; and removing a high boiling point material from the lower portion in the high boiling point separation column and supplying an upper discharge stream including an oligomer to a solvent separation column.

Abstract: An anode active material for a secondary battery includes a carbon-based active material, and silicon-based active material particles doped with magnesium. At least some of the silicon-based active material particles include pores, and a volume ratio of pores having a diameter of 50 nm or less among the pores is 2% or less based on a total volume of the silicon-based active material particles.

Abstract: A strain sensor may have a conductive elastic yarn including a first fiber having a predetermined length and a shape of a fiber yarn and a second fiber having electrical conductivity and a sheet shape. The strain sensor may have a pair of wiring members electrically connected to both ends of the conductive elastic yarn. The conductive elastic yarn, with the second fiber wrapped around the first fiber, is twisted in a coil shape.

Abstract: A resolution controller for a stretchable display includes a resolution-setting multiplexer module to receive a resolution selecting signal and to apply a gate in panel (GIP) selecting signal, in response to the resolution selecting signal, and a GIP module configured to generate a gate driving signal in response to the GIP selecting signal applied by the resolution-setting multiplexer module, and apply the gate driving signal to a pixel driving flexible printed circuit board (FPCB) of the stretchable display to drive an open pixel depending on a stretched state of the stretchable display.

Abstract: The technology and implementations disclosed in this patent document generally relate to a lithium secondary battery including: a first unit cell including a first anode including a 1-1 anode mixture layer and a 1-2 anode mixture layer on the 1-1 anode mixture layer, and a second unit cell including a second anode including a 2-1 anode mixture layer and a 2-2 anode mixture layer on the 2-1 anode mixture layer, wherein a weight ratio of the silicon-based active material in the 1-2 anode mixture layer is greater than a weight ratio of the silicon-based active material in the 1-1 anode mixture layer, and a weight ratio of the silicon-based active material in the 2-2 anode mixture layer is less than or equal to a weight ratio of the silicon-based active material in the 2-1 anode mixture layer.

Abstract: Provided are an electroluminescent device, a method of manufacturing the same, and a display device including the same, the electroluminescent device including a first electron auxiliary layer, a first light emitting layer, and a first electrode disposed on a first surface of a transparent electrode; and a second electron auxiliary layer, a second light emitting layer, and a second electrode disposed on a second surface of the transparent electrode, wherein the first electron auxiliary layer and the second electron auxiliary layer each include a plurality of zinc oxide nanoparticles, a ratio (t1/t0) of a thickness (t1) of the first electron auxiliary layer to a thickness (t0) of the transparent electrode and a ratio (t2/t0) of a thickness (t2) of the second electron auxiliary layer to the thickness (t0) of the transparent electrode are each in the range of about 0.1 to about 4.0.

Abstract: An electroluminescent device including a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode; and an electron transport layer disposed between the light emitting layer and the second electrode. The light emitting layer includes a plurality of semiconductor nanoparticles, and the electron transport layer includes a plurality of zinc oxide nanoparticles, the zinc oxide nanoparticles further include magnesium and gallium.

Abstract: An anode for a lithium secondary battery includes an anode current collector, and an anode active material layer formed on at least one surface of the anode current collector. The anode active material layer includes a carbon-based active material, a first silicon-based active material doped with magnesium and a second silicon-based active material not doped with magnesium. A content of the first silicon-based active material is in a range from 2 wt % to 20 wt % based on a total weight of the anode active material layer.

Abstract: In some implementations, the anode includes a current collector, a first anode mixture layer formed on at least one surface of the current collector, and a second anode mixture layer formed on the first anode mixture layer. The first anode mixture layer and the second anode mixture layer include a carbon-based active material, respectively. The first anode mixture layer includes a first binder, a first silicon-based active material, and a first conductive material. The second anode mixture layer includes a second binder, a second silicon-based active material, and a second conductive material. Contents of the first conductive material and the second conductive material are different from each other with respect to the total combined weight of the first anode mixture layer and the second anode mixture layer. Types of the first silicon-based active material and the second silicon-based active material are different from each other.

Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.

Abstract: The present disclosure relates to a simulation apparatus for secondary battery production.

Abstract: A method for preparing manganese sulfate and zinc sulfate from waste batteries containing manganese and zinc, and more particularly to a method for preparing manganese sulfate and zinc sulfate from waste batteries containing manganese and zinc. Zinc powder and activated carbon are added to a leached solution obtained from a continuous leaching process so as to remove heavy metals and organic materials from the leached solution, and then the leached solution is spray-dried to simultaneously obtain manganese sulfate and zinc sulfate at high-purity by a simple process without generating wastewater. An environmentally friendly waste battery recycling process is thereby provided, because it is not required to use additional chemical substances for neutralization titration or impurity removal in recovering manganese sulfate and zinc sulfate by leaching a waste battery powder.

Abstract: The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a substrate; an n? region formed on the N-type well; a plurality of p? regions penetrated and formed in the n? region; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; and a plurality of p+ regions penetrated and formed in the first layer, wherein a first n+ region among a plurality of the n+ regions and a first p+ region corresponding to the first n+ region are penetrated and formed in each other region of the corresponding first p? region among a plurality of the p? regions.

Abstract: A method for preparing manganese sulfate and zinc sulfate from waste batteries containing manganese and zinc, and more particularly to a method for preparing manganese sulfate and zinc sulfate from waste batteries containing manganese and zinc. Zinc powder and activated carbon are added to a leached solution obtained from a continuous leaching process so as to remove heavy metals and organic materials from the leached solution, and then the leached solution is spray-dried to simultaneously obtain manganese sulfate and zinc sulfate at high-purity by a simple process without generating wastewater. An environmentally friendly waste battery recycling process is thereby provided, because it is not required to use additional chemical substances for neutralization titration or impurity removal in recovering manganese sulfate and zinc sulfate by leaching a waste battery powder.

Abstract: The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a substrate; an n? region formed on the N-type well; a plurality of p? regions penetrated and formed in the n? region; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; and a plurality of p+ regions penetrated and formed in the first layer, wherein a first n+ region among a plurality of the n+ regions and a first p+ region corresponding to the first n+ region are penetrated and formed in each other region of the corresponding first p? region among a plurality of the p? regions.

Abstract: A method for manufacturing a bipolar transistor semiconductor device for preventing a degradation phenomenon of the transistor resulting from a reduction of a lateral electric field intensity. This is achieved by grading an emitter junction by way of refilling an emitter window with polycrystalline silicon. The resulting transistor structure overcomes the etch stop barrier by removing layer of oxide disposed below a layer of nitride along the region where formation of removing sidewalls of polycrystalline silicon have been formed. Subsequently, a doping distribution of the laterally graded emitter junction can easily be obtained by refilling the emitter window with the removed oxide layer with polycrystalline silicon. Because the shallowness of the oxide layer can be selectively and easily controlled, a thickness of the sidewalls is chosen which most efficiently raises the lateral electric field intensity of the transistor junction.