Patents by Inventor Moon-Hyun Cha

Moon-Hyun Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230169239
    Abstract: A device for optimizing and/or improving a simulator parameter of a semiconductor device is provided. The device comprises a memory configured to store an evolution pool, and an input tensor-score pair, and a processor configured to sample a generator network in the evolution pool, initiate a critic network to train the sampled generator network, generate an input tensor from the trained generator network, initiate a simulator to perform a black box operation on the input tensor and to output a score as a result of the operation, and store the input tensor and the score in the memory as a input tensor-score pair, store information used in the black box operation in the evolution pool when the output score is greater than a minimum score, sort the stored information, and update the evolution pool such that only a preset number of information is left in the evolution pool.
    Type: Application
    Filed: September 9, 2022
    Publication date: June 1, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chang Hwi PARK, Chang Wook JEONG, Moon Hyun CHA
  • Publication number: 20230153624
    Abstract: An object tracking learning system includes a first neural network module that expresses and learns a first parameter for an input image from a first type to a second type and outputs the learned result as a first learning result, a second neural network module that removes and learns a connection of a part of a second parameter for the input image and outputs the learned result as a second learning result, a prediction module that generates a prediction value for an object of the input image from a summation result obtained by summing the first learning result and the second learning result, and an optimization module that updates the first parameter and the second parameter based on the prediction value.
    Type: Application
    Filed: October 25, 2022
    Publication date: May 18, 2023
    Applicant: Seoul National University R&DB Foundation
    Inventors: MOON HYUN CHA, IL CHAE JUNG, BO HYUNG HAN, DAEYOUNG PARK, CHANGWOOK JEONG
  • Publication number: 20230043089
    Abstract: Some example embodiments relate to a super resolution scanning electron microscope (SEM) image implementing device and/or a method thereof. Provided a super resolution scanning electron microscope (SEM) image implementing device comprising a processor configured to crop a low resolution SEM image to generate a first cropped image and a second cropped image, to upscale the first cropped image and the second cropped image to generate a first upscaled image and a second upscaled image, and to cancel noise from the first upscaled image and the second upscaled image to generate a first noise canceled image and a second noise canceled image.
    Type: Application
    Filed: April 15, 2022
    Publication date: February 9, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ho Joon LEE, Il Kwon KIM, Sang Gul PARK, Chang Wook JEONG, Moon Hyun CHA, Sat Byul KIM
  • Publication number: 20190392100
    Abstract: A non-transitory computer-readable storage medium stores instructions. When executed by a computer, the instructions cause the computer to perform a method for a semiconductor design simulation. The method may include generating first polygon meshes, transforming the first polygon meshes to first level sets, performing logical operations on the first level sets to generate second level sets, and transforming the second level sets to second polygon meshes.
    Type: Application
    Filed: February 19, 2019
    Publication date: December 26, 2019
    Inventors: MOON HYUN CHA, HIGASHI KOTAKEMORI, HIROYUKI KUBOTERA
  • Patent number: 8822714
    Abstract: The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen. The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10-C20) aromatic compound in aprotic polar solvent and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic transition metal halide. The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: September 2, 2014
    Assignee: Hanwha Chemical Corporation
    Inventors: Jong Sik Kim, Dong Ok Kim, Hee Bock Yoon, Jaesung Park, Hyo Jin Jeon, Gui Ryong Ahn, Dong Wook Kim, Jisoon Ihm, Moon-Hyun Cha
  • Patent number: 8536358
    Abstract: The present invention relates to substances which can be applied to the technical fields of gas storages, polymerization catalysts and optical isomers, their intermediates, and processes for preparing the same, which is characterized in that 1) possible disintegration of structure of the scaffold material (SM) is impeded, and 2) they are prepared by a simple manufacturing system as compared to the substances conventionally suggested in the application field. Specifically, it relates to scaffold material-transition metal hydride complexes comprised of scaffold material (SM) and transition metal hydride (M1H(n-1)) which is chemically bonded to the functional groups formed on the scaffold material, SM-transition metal halide complex and SM-transition metal ligand complex as the precursors, and a process for preparing the same. The SM-transition metal hydride complex according to the present invention is a substance for hydrogen storage which adsorbs hydrogen via Kubas adsorption.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: September 17, 2013
    Assignee: Hanwha Chemical Corporation
    Inventors: Jong Sik Kim, Dong Wook Kim, Dong Ok Kim, Gui Ryong Ahn, Jeasung Park, Hyo Jin Jeon, Jisoon Ihm, Moon-Hyun Cha
  • Publication number: 20130123527
    Abstract: The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen. The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10˜C20) aromatic compound in aprotic polar solvent; and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic-transition metal halide. The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.
    Type: Application
    Filed: December 21, 2012
    Publication date: May 16, 2013
    Inventors: Jong Sik KIM, Dong Ok KIM, Hee Bock YOON, Jaesung PARK, Hyo Jin JEON, Gui Ryong AHN, Dong Wook KIM, Jisoon IHM, Moon-Hyun CHA
  • Patent number: 8354553
    Abstract: The present invention relates to an improved preparation method of an organic-transition metal hydride as a hydrogen storage material, especially an improved preparation method of an organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reversible storage of a massive amount of hydrogen. The present invention also relates to a preparation method of an organic-transition metal hydride comprising the steps of: preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and a C10 to C20 aromatic compound in aprotic polar solvent; and preparing the organic-transition metal hydride by reacting the prepared complex reducing agent composition with an organic-transition metal halide in the absence of a hydrogen source.
    Type: Grant
    Filed: August 10, 2009
    Date of Patent: January 15, 2013
    Assignee: Hanwha Chemical Corporation
    Inventors: Jong Sik Kim, Dong Ok Kim, Hee Bock Yoon, Jeasung Park, Hyo Jin Jeon, Gui Ryong Ahn, Dong Wook Kim, Jisoon Ihm, Moon-Hyun Cha
  • Publication number: 20110201834
    Abstract: The present invention relates to substances which can be applied to the technical fields of gas storages, polymerization catalysts and optical isomers, their intermediates, and processes for preparing the same, which is characterized in that 1) possible disintegration of structure of the scaffold material (SM) is impeded, and 2) they are prepared by a simple manufacturing system as compared to the substances conventionally suggested in the application field. Specifically, it relates to scaffold material-transition metal hydride complexes comprised of scaffold material (SM) and transition metal hydride (M1H(n-1)) which is chemically bonded to the functional groups formed on the scaffold material, SM-transition metal halide complex and SM-transition metal ligand complex as the precursors, and a process for preparing the same. The SM-transition metal hydride complex according to the present invention is a substance for hydrogen storage which adsorbs hydrogen via Kubas adsorption.
    Type: Application
    Filed: January 22, 2010
    Publication date: August 18, 2011
    Applicant: HANWHA CHEMICAL CORPORATION
    Inventors: Jong Sik Kim, Dong Wook Kim, Dong Ok Kim, Gui Ryong Ahn, Jeasung Park, Hyo Jin Jeon, Jisoon Ihm, Moon-Hyun Cha
  • Patent number: 7790911
    Abstract: The present invention relates to an advanced preparation method of organic-transition metal hydride used as hydrogen storage materials, the method including: preparing organic-transition metal-aluminum hydride complexes by reacting the organic-transition metal halide with metal aluminum hydride compounds; and preparing the organic-transition metal hydride by reacting the organic-transition metal aluminum hydride complexes with Lewis bases. Since the preparation method of the organic-transition metal hydride according to the present invention does not use catalysts, it has advantages that it does not cause problems due to poisoning and can prepare the organic-transition metal hydride at high yield under less stringent conditions. The hydrogen storage materials containing the organic-transition metal hydride prepared from the preparation method can safely and reversibly store a large amount of hydrogen.
    Type: Grant
    Filed: March 5, 2009
    Date of Patent: September 7, 2010
    Assignee: Hanwha Chemical Corporation
    Inventors: Jong Sik Kim, Jeasung Park, Hyo Jin Jeon, Hee Bock Yoon, Dong Wook Kim, Gui Ryong Ahn, Dong Ok Kim, Jisoon Ihm, Moon-Hyun Cha
  • Publication number: 20100036145
    Abstract: The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen. The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10˜C20) aromatic compound in aprotic polar solvent; and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic-transition metal halide. The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.
    Type: Application
    Filed: August 10, 2009
    Publication date: February 11, 2010
    Inventors: Jong Sik Kim, Dong Ok Kim, Hee Bock Yoon, Jeasung Park, Hyo Jin Jeon, Gui Ryong Ahn, Dong Wook Kim, Jisoon Ihm, Moon-Hyun Cha
  • Publication number: 20090227808
    Abstract: The present invention relates to an advanced preparation method of organic-transition metal hydride used as hydrogen storage materials, the method including: preparing organic-transition metal-aluminum hydride complexes by reacting the organic-transition metal halide with metal aluminum hydride compounds; and preparing the organic-transition metal hydride by reacting the organic-transition metal aluminum hydride complexes with Lewis bases. Since the preparation method of the organic-transition metal hydride according to the present invention does not use catalysts, it has advantages that it does not cause problems due to poisoning and can prepare the organic-transition metal hydride at high yield under less stringent conditions. The hydrogen storage materials containing the organic-transition metal hydride prepared from the preparation method can safely and reversibly store a large amount of hydrogen.
    Type: Application
    Filed: March 5, 2009
    Publication date: September 10, 2009
    Inventors: Jong Sik Kim, Jeasung Park, Hyo Jin Jeon, Hee Bock Yoon, Dong Wook Kim, Gui Ryong Ahn, Dong Ok Kim, Jisoon Ihm, Moon-Hyun Cha