Abstract: The present invention relates to a resistless dry lithography method and a method of forming a gate pattern using the same. The present invention utilizes the phenomena of altering the susceptibility to dry etching of a portion of Si layer exposed to the energetic electron beam. The dry lithography method comprises the steps of preparing a pattern-transferring object of silicon, exposing an electron beam to a desired portion of the pattern-transferring object, and performing reactive ion etch process to selectively etch the unexposed portion, thereby leaving the exposed portion of the pattern-transferring object. The present invention is an all-dry process and the entire lithography processes can be performed on one cluster equipment in a controlled environment, eliminating human handling of wafers and exposure to atmospheric environment to minimize contaminations during the process.