Abstract: A method for applying error correction code (ECC) to a memory performed by an apparatus for applying ECC to a memory in an artificial neural network-based system semiconductor, includes dividing memory cells into a plurality of groups of memory cell arrays corresponding to first to n-th frames based on word lines, wherein n is a natural number greater than or equal to 2, performing an ECC write or read operation by applying ECC to a memory cell array of a group corresponding to each of the first to n-th frames, and performing a general write or read operation without applying ECC to the memory cell array of the remaining groups excluding the group corresponding to each of the first to n-th frames.