Abstract: A light-emitting element includes a first semiconductor layer, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a device electrode layer disposed on the second semiconductor layer, a reflective electrode layer disposed on the device electrode layer, an insulating film surrounding a side surface of the light-emitting layer, a side surface of the second semiconductor layer, and a side surface of the device electrode layer, and a reflective layer surrounding a side surface of the insulating film, wherein the side surface of the device electrode layer is aligned with a side surface of the reflective electrode layer.

Abstract: A modular fluidic chip includes a body configured to have at least one flow channel formed in an inside thereof and be connected to another modular fluidic chip to allow the at least one flow channel to communicate with a flow channel provided in the other modular fluidic chip. A fluidic chip capable of performing one function is formed in the form of a module, whereby a fluidic flow system of various structures can be implemented without restriction in shape or size by connecting a plurality of fluidic chips capable of performing different functions as necessary. Through this, various and accurate experimental data can be obtained, and when a specific portion is deformed or damaged, only the fluidic chip corresponding thereto can be replaced, thereby reducing manufacture and maintenance costs.

Abstract: A modular fluidic chip includes a body configured to have at least one flow channel formed in an inside thereof and be connected to another modular fluidic chip to allow the at least one flow channel to communicate with a flow channel provided in the other modular fluidic chip. A fluidic chip capable of performing one function is formed in the form of a module, whereby a fluidic flow system of various structures can be implemented without restriction in shape or size by connecting a plurality of fluidic chips capable of performing different functions as necessary. Through this, various and accurate experimental data can be obtained, and when a specific portion is deformed or damaged, only the fluidic chip corresponding thereto can be replaced, thereby reducing manufacture and maintenance costs.

Abstract: A method for providing quantitative information for targets and a device using the same according to an exemplary embodiment of the present disclosure are provided. A quantitative information providing method for targets according to the exemplary embodiment of the present disclosure includes flowing a plurality of microdroplets into a chamber or a channel including a detection region acquiring a single layer of microdroplets in which the plurality of microdroplets is present as a single layer, and providing quantitative data of targets based on the single layer image of the microdroplets, and the detection region has a height which is one time to about two times of a diameter of the plurality of microdroplets and is defined as a region in which the plurality of microdroplets is dispersed in a plurality of columns to fill the detection region.

Abstract: A modular fluid chip according to an embodiment of the present disclosure includes a body including at least one first hole which allows fluid to flow therethrough; and a housing receiving the body therein, and including a second hole which corresponds to the at least one first hole and allows the fluid to flow therethrough, and a fluid connection part which is connectable to another modular fluid chip.

Abstract: A modular fluid chip according to an embodiment of the present disclosure includes a body including at least one first hole which allows fluid to flow therethrough; and a housing receiving the body therein, and including a second hole which corresponds to the at least one first hole and allows the fluid to flow therethrough, and a fluid connection part which is connectable to another modular fluid chip.

Abstract: A modular fluidic chip according to an embodiment of the present disclosure includes a body configured to have at least one flow channel formed in an inside thereof and be connected to another modular fluidic chip to allow the at least one flow channel to communicate with a flow channel provided in the other modular fluidic chip. According to the embodiment of the present disclosure, a fluidic chip capable of performing one function is formed in the form of a module, whereby a fluidic flow system of various structures can be implemented without restriction in shape or size by connecting a plurality of fluidic chips capable of performing different functions as necessary. Through this, various and accurate experimental data can be obtained, and when a specific portion is deformed or damaged, only the fluidic chip corresponding thereto can be replaced, thereby reducing manufacture and maintenance costs.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: Provided are a speech restoration system and method for concealing packet losses.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.

Abstract: A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.