Patents by Inventor Moon Kyong Na

Moon Kyong Na has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide trench schottky barrier diode using polysilicon and a method of manufacturing the same
    Patent number: 11121265
    Abstract: The present invention relates to a silicon carbide trench Schottky barrier diode using polysilicon and a method of manufacturing same. The diode has a low turn-on voltage and an improved reverse characteristic. The method includes sequentially forming an epitaxial layer, a polysilicon layer, an oxide film, and a photoresist film on a silicon carbide substrate, patterning the photoresist to form a photoresist pattern, etching the oxide film using the photoresist pattern as an etching mask to form an oxide film pattern, etching the polysilicon layer using the oxide film pattern as an etching mask to form a polysilicon pattern, removing the photoresist pattern, forming an epitaxial pattern by etching the epitaxial layer down to a predetermined depth using the oxide film pattern as an etching mask, and removing the oxide film pattern to produce a trench.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: September 14, 2021
    Inventors: O Gyun Seok, In Ho Kang, Sang Cheol Kim, Hyoung Woo Kim, Moon Kyong Na, Jeong Hyun Moon, Wook Bang
  • SILICON CARBIDE TRENCH SCHOTTKY BARRIER DIODE USING POLYSILICON AND A METHOD OF MANUFACTURING THE SAME
    Publication number: 20200098936
    Abstract: The present invention relates to a silicon carbide trench Schottky barrier diode using polysilicon and a method of manufacturing same. The diode has a low turn-on voltage and an improved reverse characteristic. The method includes sequentially forming an epitaxial layer, a polysilicon layer, an oxide film, and a photoresist film on a silicon carbide substrate, patterning the photoresist to form a photoresist pattern, etching the oxide film using the photoresist pattern as an etching mask to form an oxide film pattern, etching the polysilicon layer using the oxide film pattern as an etching mask to form a polysilicon pattern, removing the photoresist pattern, forming an epitaxial pattern by etching the epitaxial layer down to a predetermined depth using the oxide film pattern as an etching mask, and removing the oxide film pattern to produce a trench.
    Type: Application
    Filed: October 17, 2019
    Publication date: March 26, 2020
    Inventors: O Gyun Seok, In Ho Kang, Sang Cheol Kim, Hyoung Woo Kim, Moon Kyong Na, Jeong Hyun Moon, Wook Bang