Abstract: A floating offshore structure of the present disclosure includes: a plurality of columns; and a plurality of pontoons installed at lower ends of the columns, respectively, wherein a polygonal shape is formed by an imaginary line connecting the columns, the pontoons are installed inside the polygonal shape, a cross-sectional area in a direction parallel to sea level of the pontoons is greater than or equal to the cross-sectional area in the direction parallel to the sea level of the columns, and the pontoons may have a shape protruding outward at the lower ends of the columns.

Abstract: A floating offshore structure of the present invention comprises: a plurality of columns; and a tower support column for supporting a tower of a power generation structure, wherein a polygonal shape is formed by means of an imaginary line connecting the columns, and the tower supporting column can be provided at one point of one of the sides of the polygonal shape.

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Abstract: An ultrasound probe including a housing, a head part provided on the housing so as to enable expansion and contraction, an array provided in the housing and having one or more transducers, a rotary part provided at a rear surface of the array to rotate the array, a pressing part configured to expand the head part by applying pressure to the head part, and a control part, when the head part is inserted into a target object, configured to allow the array to control the pressing part such that the head part is expanded, and allow the array to be rotated in the expanded head part, by controlling the rotary part, thereby relieving pain involved with insertion of the ultrasound probe.

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

Abstract: A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Abstract: Provided are a semiconductor device in which a multi-threshold voltage is embodied by controlling a work function, and a method of manufacturing the same. The device includes a semiconductor substrate including a first region and a second region, a first active region formed in an upper portion of the first region of the semiconductor substrate, a second active region formed in an upper portion of the second region of the semiconductor substrate, a first gate structure formed on the semiconductor substrate across the first active region, the first gate structure including an interfacial layer, a high-k dielectric layer, a capping metal layer, and a work function metal layer that are stacked sequentially, and a second gate structure formed on the semiconductor substrate across the second active region, the second gate structure including the interfacial layer, the high-k dielectric layer, the capping metal layer, a dielectric layer, and the work function metal layer that are stacked sequentially.

Abstract: A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.

Abstract: Provided are methods for fabricating semiconductor devices. The methods for fabricating the semiconductor devices may include forming a first interlayer insulation film including a trench on a substrate, forming a high-k layer along an inner sidewall and a bottom surface of the trench, forming a first work function control film including impurities along the high-k layer, removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60% and forming a gate metal in the trench.

Abstract: Provided are methods for fabricating semiconductor devices. The methods for fabricating the semiconductor devices may include forming a first interlayer insulation film including a trench on a substrate, forming a high-k layer along an inner sidewall and a bottom surface of the trench, forming a first work function control film including impurities along the high-k layer, removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60% and forming a gate metal in the trench.

Abstract: According to the present invention, an automatic in vitro diagnosis apparatus including an inclined rotating stirrer is an apparatus for the automatic in vitro diagnosis of a clinical specimen or a reagent. The present invention includes: a clinical specimen storage unit which stores a clinical specimen; a reagent storage unit which stores a reagent; a code reader unit which recognizes an identification code attached to the clinical specimen storage unit or to the reagent storage unit; a dispenser which suctions the clinical specimen and the reagent from the clinical specimen storage unit and the reagent storage unit, and transports the clinical specimen and the reagent which are suctioned; and a rotating stirrer which receives the clinical specimen and the reagent from the dispenser and rotates about an axis of rotation so as to stir the clinical specimen and the reagent.

Abstract: An ultrasound probe including a housing, a head part provided on the housing so as to enable expansion and contraction, an array provided in the housing and having one or more transducers, a rotary part provided at a rear surface of the array to rotate the array, a pressing part configured to expand the head part by applying pressure to the head part, and a control part, when the head part is inserted into a target object, configured to allow the array to control the pressing part such that the head part is expanded, and allow the array to be rotated in the expanded head part, by controlling the rotary part, thereby relieving pain involved with insertion of the ultrasound probe.

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

Abstract: A product package box for an easy taking-out of a product. The box includes multiple of sidewalls that form a body part surrounding the sides of the product, and wings that cover the multiple of sidewalls and upper and lower sides of the body part. Two of the sidewalls are separated from each other, and fastened to each other by tape. On a lower portion of the sidewall of the body, opening-inducing perforations are horizontally extended from a certain point of adjoining ends of the two separated sidewalls and at a predetermined height from the bottom of the box. The wings are integrally formed on the body part, and bent inward the body part to thereby form the upper and lower sides of the body part. By removing the tape that fastens the separated sidewalls, and by tearing along the opening-inducing perforations, one can easily open the box and thus unpack. As a result, since the product can be taken out of the box in a horizontal direction, the unpacking of the product becomes safer and easier.