Abstract: A multilayer electronic component includes a capacitance formation portion where the first and second internal electrodes overlap each other in a first direction, a first margin portion disposed on one side surface or the other side surface of the capacitance formation portion in a second direction and including one end of the first or second internal electrode. A dielectric layer includes a first region disposed at a center region of the dielectric layer included in the capacitance formation portion, and a second region included in the first margin portion. At least one element of Mg, Si, Al, Li, Cu, Na, Bi, Mn, Cr, V, Fe, Ni, Co, Sn, In, Ga, Zn, Pb, Ag, Pd, Pt, Ir, Ru, Os, Y, Er, Yb, Tb, Ho, Dy is included in the second region, and not substantially included in the first region.

Abstract: The present disclosure provides a multilayer electronic component which may improve a break down voltage (BDV) characteristic by adjusting a ratio of a content of an element included in a first or second region of a dielectric layer to reduce a difference in dielectric grain size dispersion and grain density in the first or second region.