Abstract: A 1.55 ?m SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.

Abstract: An assembling type sectional shelf structure is disclosed. A plurality of shelves can be easily assembled to a support member so that various things can be arranged and stored on each shelf.

Abstract: Provided is a composition for cancer treatment including phytosphingosine or a derivative thereof, or a pharmaceutically acceptable salt thereof as an active ingredient.

Abstract: The present invention relates to an apparatus for controlling temperature of an optical module using an uncooled laser diode. A first setup unit for establishing low-temperature setup voltage and a second setup unit for establishing high-temperature setup voltage determine first and second threshold voltages suitable for low-temperature and high-temperature setup voltages, respectively. First and second comparators compare the low-temperature and high-temperature setup voltages with sensor voltage received from a sensor voltage entry unit, respectively. The output signals of the comparators are applied to a logic circuit, such that the logic circuit generates on/off signals according to the result of the comparison. The logic circuit generates a high-level signal only when the sensor voltage escaped from a predetermined voltage range, and thus operates the temperature control circuit.

Abstract: An acrylic adhesive composition, an optical film and a liquid crystal display using the same, wherein the acrylic adhesive composition has excellent impact resistance, which improves resistance to external impact of an optical film, increases the wide viewing angle and brightness of an image display, such as a liquid crystal display, and increases durability of the optical film under heat and moist heat conditions. The acrylic adhesive composition having excellent impact resistance includes (a) 100 parts by weight of an acrylic copolymer, (b) 0.01˜10 parts by weight of a crosslinking agent, and (c) 0.5˜20 parts by weight of a polymer having an amino group, the acrylic copolymer being obtained by copolymerizing (1) 0.5˜10 wt % of a vinylic monomer having no carboxyl group, (2) 0.5˜20 wt % of a vinylic monomer having a carboxyl group, and (3) a balance of a (meth)acrylic acid ester monomer having a C1˜C12 alkyl group.

Abstract: A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively performed over the wide wavelength band by the consecutive shift of the angle of the intra cavity laser beam.

Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

Abstract: Provided is a monolithic integrated semiconductor broad band light source. In the monolithic integrated semiconductor broad band light source, an electro absorption modulator, a semiconductor optical amplifier, and a light emitting diode are integrated on an InP substrate. Ions are implanted among the electro absorption modulator, the semiconductor optical amplifier, and the light emitting diode to electrically insulate the electro absorption modulator, the semiconductor optical amplifier, and the light emitting diode from one another. Electrodes independently implant currents into the electro absorption modulator, the semiconductor optical amplifier, and the light emitting diode. In particular, it is important to form a current intercepting layer and electrically insulate electrodes from one another but optically connect the electrodes in terms of performance of the monolithic integrated semiconductor broad band light source.

Abstract: A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

Abstract: A remote jack pack has a video input jack that receives a video signal, an audio input jack that receives an audio signal, a video output that transfers the video signal to a television, an audio output that transfers the audio signal to the television, and a control output that automatically supplies control signals to the television. The control signals indicate the availability of the video and audio signals for processing by the television. The television has a tuner that supplies video and audio signals of a selected channel, a video connector that receives video from the remote jack pack, an audio connector that receives audio from the remote jack pack, a control connector that receive control signals from the remote jack pack, and a processor that is responsive to the control signals to selectively control display of the video and audio signals from the tuner and the video and audio signals from the video and audio connectors.

Abstract: Provided is a coherent tuning apparatus capable of continuously tuning wavelength of light over a wide band of wavelength at high speed and outputting high power, the apparatus including an optical waveguide through which spatially coherent light passes, an electrode array for changing a direction of the light passing through the optical waveguide by applying electric field or current to a portion of the optical waveguide, and a wavelength selection optical element unit for selecting a specific wavelength of the light.

Abstract: Provided is a method for manufacturing a planar buried semiconductor optical amplifier in which a spot size converter with a double-core structure is integrated, comprising the steps of: after growing a lower cladding layer, a lower waveguide layer and an upper cladding layer on a substrate, patterning a portion of thickness of the lower cladding layer, the lower waveguide layer and the upper cladding layer through an etching process using a dielectric layer pattern to form a lower waveguide; growing a planarization layer on the etched portions of the lower cladding layer, the lower waveguide layer and the upper cladding layer to smooth a surface; after removing the dielectric layer pattern, growing a space layer, an upper waveguide layer and a first cladding layer on the overall upper surface; patterning the first cladding layer, the upper waveguide layer and the space layer through the etching process using the dielectric layer pattern to form an upper waveguide having a horizontal taper area; after growing