Patents by Inventor Moon Soo Sung
Moon Soo Sung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240013821Abstract: Provided herein may be a nonvolatile semiconductor memory device. The nonvolatile semiconductor memory device may include a memory cell array, a read and write circuit, and a control logic. The memory cell array may include a plurality of nonvolatile memory cells. The read and write circuit may be configured to perform a program operation or a read operation on nonvolatile memory cells that are selected from among the plurality of nonvolatile memory cells. The control logic may be configured to control an operation of the read and write circuit. The read and write circuit may include at least one capacitor configured to store bit data.Type: ApplicationFiled: December 2, 2022Publication date: January 11, 2024Applicant: SK hynix Inc.Inventors: Won Jae CHOI, Jeong Hwan KIM, Moon Soo SUNG
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Patent number: 11430519Abstract: A switching architecture provides input voltage signals from input voltage lines to a plurality of global word lines connected to word lines of a memory array in a memory device. The switching architecture includes a first switching block receiving a first set of positive voltages used to bias unselected word lines and being connected to a first output line providing a first output bias voltage, and a second switching block receiving a second set of positive voltages and a third set of negative voltages used to bias selected word lines and being connected to a second output line providing a second output bias voltage. A plurality of final switches are input connected to the first and second output lines and are output connected to a respective global word line.Type: GrantFiled: March 9, 2021Date of Patent: August 30, 2022Assignee: SK hynix Inc.Inventors: Marco Passerini, Giulio Maria Iadicicco, Yong Tae Kim, Moon Soo Sung, Dario Melchionni, Miriam Sangalli
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Publication number: 20210287747Abstract: A switching architecture provides input voltage signals from input voltage lines to a plurality of global word lines connected to word lines of a memory array in a memory device. The switching architecture includes a first switching block receiving a first set of positive voltages used to bias unselected word lines and being connected to a first output line providing a first output bias voltage, and a second switching block receiving a second set of positive voltages and a third set of negative voltages used to bias selected word lines and being connected to a second output line providing a second output bias voltage. A plurality of final switches are input connected to the first and second output lines and are output connected to a respective global word line.Type: ApplicationFiled: March 9, 2021Publication date: September 16, 2021Applicant: SK hynix Inc.Inventors: Marco Passerini, Giulio Maria Iadicicco, Yong Tae KIM, Moon Soo SUNG, Dario Melchionni, Miriam Sangalli
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Patent number: 10741248Abstract: A global word line decoder may include a voltage switching unit and a plane switching unit. The voltage switching unit may decode a plurality of operating voltages to output a selected voltage and an unselected voltage, and the plane switching unit may receive the selected voltage and the unselected voltage, and decode the selected voltage and the unselected voltage to output decoded voltages to a global word line coupled to a selected plane, among a plurality of planes. The selected voltage may include a first pre-decoded voltage and a second pre-decoded voltage, and the plane switching unit may swap and output the first pre-decoded voltage and the second pre-decoded voltage according to a position of a selected word line.Type: GrantFiled: March 23, 2018Date of Patent: August 11, 2020Assignee: SK hynix Inc.Inventor: Moon Soo Sung
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Publication number: 20190051356Abstract: A global word line decoder may include a voltage switching unit and a plane switching unit. The voltage switching unit may decode a plurality of operating voltages to output a selected voltage and an unselected voltage, and the plane switching unit may receive the selected voltage and the unselected voltage, and decode the selected voltage and the unselected voltage to output decoded voltages to a global word line coupled to a selected plane, among a plurality of planes. The selected voltage may include a first pre-decoded voltage and a second pre-decoded voltage, and the plane switching unit may swap and output the first pre-decoded voltage and the second pre-decoded voltage according to a position of a selected word line.Type: ApplicationFiled: March 23, 2018Publication date: February 14, 2019Inventor: Moon Soo SUNG
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Patent number: 9411352Abstract: A trimming circuit may include a code table storing unit configured to store a plurality of test codes, a test voltage generating unit configured to generate test voltages in response to the test codes output by the code table storing unit, and a trimming unit configured to exchange and compare the test voltages and a reference voltage and output first and second pass signals. The trimming circuit may include a code table temporarily storing unit configured to store a test code from among the test codes as a first test code in response to the output of the first pass signal, and store a test code from among the test codes as a second test code in response to the output of the second pass signal, and a calculating unit configured to generate an intermediate code of the first and second test codes as a trimming code.Type: GrantFiled: July 13, 2015Date of Patent: August 9, 2016Assignee: SK hynix Inc.Inventor: Moon Soo Sung
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Patent number: 8633759Abstract: A voltage generator includes a clock generator configured to generate a first clock signal and a second clock signal having a longer cycle than the first clock signal, a pumping unit configured to generate a pumping voltage in response to the first or second clock signal, a first detection circuit configured to detect the pumping voltage and generate a first control signal for controlling the operation of the pumping unit based on the result of the detection, and a second detection circuit configured to generate a second control signal for outputting the first or second clock signal generated from the clock generator depending on whether the first control signal maintains an enable state for a specific time.Type: GrantFiled: April 19, 2012Date of Patent: January 21, 2014Assignee: SK Hynix Inc.Inventor: Moon Soo Sung
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Patent number: 8605519Abstract: A pump circuit includes a plurality of clock control circuits configured to transfer a clock to respective output terminals in response to respective pump-off signals or block the clock from being transferred to the respective output terminals, a plurality of charge pumps configured to generate respective high voltages by performing respective pumping operations in response to respective clock signals of the output terminals, and a plurality of switching circuits configured to transfer the respective high voltages to a final output terminal in response to respective control signals.Type: GrantFiled: December 2, 2011Date of Patent: December 10, 2013Assignee: Hynix Semiconductor Inc.Inventor: Moon Soo Sung
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Publication number: 20120268179Abstract: A voltage generator includes a clock generator configured to generate a first clock signal and a second clock signal having a longer cycle than the first clock signal, a pumping unit configured to generate a pumping voltage in response to the first or second clock signal, a first detection circuit configured to detect the pumping voltage and generate a first control signal for controlling the operation of the pumping unit based on the result of the detection, and a second detection circuit configured to generate a second control signal for outputting the first or second clock signal generated from the clock generator depending on whether the first control signal maintains an enable state for a specific time.Type: ApplicationFiled: April 19, 2012Publication date: October 25, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventor: Moon Soo SUNG
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Patent number: 8295103Abstract: A nonvolatile semiconductor memory apparatus includes a control unit configured to generate a select signal and a driving control signal in response to a first enable signal and a second enable signal; a level shifting unit configured to enable a first shifting signal or a second shifting signal to a level of a pumping voltage in response to the select signal and the driving control signal; a first switching unit configured to apply a program voltage to a word line when the first shifting signal is enabled to the level of the pumping voltage; and a second switching unit configured to apply a pass voltage to the word line when the second shifting signal is enabled to the level of the pumping voltage.Type: GrantFiled: November 18, 2010Date of Patent: October 23, 2012Assignee: SK Hynix Inc.Inventor: Moon Soo Sung
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Publication number: 20120140563Abstract: A pump circuit includes a plurality of clock control circuits configured to transfer a clock to respective output terminals in response to respective pump-off signals or block the clock from being transferred to the respective output terminals, a plurality of charge pumps configured to generate respective high voltages by performing respective pumping operations in response to respective clock signals of the output terminals, and a plurality of switching circuits configured to transfer the respective high voltages to a final output terminal in response to respective control signals.Type: ApplicationFiled: December 2, 2011Publication date: June 7, 2012Inventor: Moon Soo SUNG
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Publication number: 20110128799Abstract: A nonvolatile semiconductor memory apparatus includes a control unit configured to generate a select signal and a driving control signal in response to a first enable signal and a second enable signal; a level shifting unit configured to enable a first shifting signal or a second shifting signal to a level of a pumping voltage in response to the select signal and the driving control signal; a first switching unit configured to apply a program voltage to a word line when the first shifting signal is enabled to the level of the pumping voltage; and a second switching unit configured to apply a pass voltage to the word line when the second shifting signal is enabled to the level of the pumping voltage.Type: ApplicationFiled: November 18, 2010Publication date: June 2, 2011Applicant: Hynix Semiconductor Inc.Inventor: Moon Soo SUNG