Patents by Inventor Moon Soo Sung

Moon Soo Sung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210287747
    Abstract: A switching architecture provides input voltage signals from input voltage lines to a plurality of global word lines connected to word lines of a memory array in a memory device. The switching architecture includes a first switching block receiving a first set of positive voltages used to bias unselected word lines and being connected to a first output line providing a first output bias voltage, and a second switching block receiving a second set of positive voltages and a third set of negative voltages used to bias selected word lines and being connected to a second output line providing a second output bias voltage. A plurality of final switches are input connected to the first and second output lines and are output connected to a respective global word line.
    Type: Application
    Filed: March 9, 2021
    Publication date: September 16, 2021
    Applicant: SK hynix Inc.
    Inventors: Marco Passerini, Giulio Maria Iadicicco, Yong Tae KIM, Moon Soo SUNG, Dario Melchionni, Miriam Sangalli
  • Patent number: 10741248
    Abstract: A global word line decoder may include a voltage switching unit and a plane switching unit. The voltage switching unit may decode a plurality of operating voltages to output a selected voltage and an unselected voltage, and the plane switching unit may receive the selected voltage and the unselected voltage, and decode the selected voltage and the unselected voltage to output decoded voltages to a global word line coupled to a selected plane, among a plurality of planes. The selected voltage may include a first pre-decoded voltage and a second pre-decoded voltage, and the plane switching unit may swap and output the first pre-decoded voltage and the second pre-decoded voltage according to a position of a selected word line.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: August 11, 2020
    Assignee: SK hynix Inc.
    Inventor: Moon Soo Sung
  • Publication number: 20190051356
    Abstract: A global word line decoder may include a voltage switching unit and a plane switching unit. The voltage switching unit may decode a plurality of operating voltages to output a selected voltage and an unselected voltage, and the plane switching unit may receive the selected voltage and the unselected voltage, and decode the selected voltage and the unselected voltage to output decoded voltages to a global word line coupled to a selected plane, among a plurality of planes. The selected voltage may include a first pre-decoded voltage and a second pre-decoded voltage, and the plane switching unit may swap and output the first pre-decoded voltage and the second pre-decoded voltage according to a position of a selected word line.
    Type: Application
    Filed: March 23, 2018
    Publication date: February 14, 2019
    Inventor: Moon Soo SUNG
  • Patent number: 9411352
    Abstract: A trimming circuit may include a code table storing unit configured to store a plurality of test codes, a test voltage generating unit configured to generate test voltages in response to the test codes output by the code table storing unit, and a trimming unit configured to exchange and compare the test voltages and a reference voltage and output first and second pass signals. The trimming circuit may include a code table temporarily storing unit configured to store a test code from among the test codes as a first test code in response to the output of the first pass signal, and store a test code from among the test codes as a second test code in response to the output of the second pass signal, and a calculating unit configured to generate an intermediate code of the first and second test codes as a trimming code.
    Type: Grant
    Filed: July 13, 2015
    Date of Patent: August 9, 2016
    Assignee: SK hynix Inc.
    Inventor: Moon Soo Sung
  • Patent number: 8633759
    Abstract: A voltage generator includes a clock generator configured to generate a first clock signal and a second clock signal having a longer cycle than the first clock signal, a pumping unit configured to generate a pumping voltage in response to the first or second clock signal, a first detection circuit configured to detect the pumping voltage and generate a first control signal for controlling the operation of the pumping unit based on the result of the detection, and a second detection circuit configured to generate a second control signal for outputting the first or second clock signal generated from the clock generator depending on whether the first control signal maintains an enable state for a specific time.
    Type: Grant
    Filed: April 19, 2012
    Date of Patent: January 21, 2014
    Assignee: SK Hynix Inc.
    Inventor: Moon Soo Sung
  • Patent number: 8605519
    Abstract: A pump circuit includes a plurality of clock control circuits configured to transfer a clock to respective output terminals in response to respective pump-off signals or block the clock from being transferred to the respective output terminals, a plurality of charge pumps configured to generate respective high voltages by performing respective pumping operations in response to respective clock signals of the output terminals, and a plurality of switching circuits configured to transfer the respective high voltages to a final output terminal in response to respective control signals.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: December 10, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventor: Moon Soo Sung
  • Publication number: 20120268179
    Abstract: A voltage generator includes a clock generator configured to generate a first clock signal and a second clock signal having a longer cycle than the first clock signal, a pumping unit configured to generate a pumping voltage in response to the first or second clock signal, a first detection circuit configured to detect the pumping voltage and generate a first control signal for controlling the operation of the pumping unit based on the result of the detection, and a second detection circuit configured to generate a second control signal for outputting the first or second clock signal generated from the clock generator depending on whether the first control signal maintains an enable state for a specific time.
    Type: Application
    Filed: April 19, 2012
    Publication date: October 25, 2012
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Moon Soo SUNG
  • Patent number: 8295103
    Abstract: A nonvolatile semiconductor memory apparatus includes a control unit configured to generate a select signal and a driving control signal in response to a first enable signal and a second enable signal; a level shifting unit configured to enable a first shifting signal or a second shifting signal to a level of a pumping voltage in response to the select signal and the driving control signal; a first switching unit configured to apply a program voltage to a word line when the first shifting signal is enabled to the level of the pumping voltage; and a second switching unit configured to apply a pass voltage to the word line when the second shifting signal is enabled to the level of the pumping voltage.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: October 23, 2012
    Assignee: SK Hynix Inc.
    Inventor: Moon Soo Sung
  • Publication number: 20120140563
    Abstract: A pump circuit includes a plurality of clock control circuits configured to transfer a clock to respective output terminals in response to respective pump-off signals or block the clock from being transferred to the respective output terminals, a plurality of charge pumps configured to generate respective high voltages by performing respective pumping operations in response to respective clock signals of the output terminals, and a plurality of switching circuits configured to transfer the respective high voltages to a final output terminal in response to respective control signals.
    Type: Application
    Filed: December 2, 2011
    Publication date: June 7, 2012
    Inventor: Moon Soo SUNG
  • Publication number: 20110128799
    Abstract: A nonvolatile semiconductor memory apparatus includes a control unit configured to generate a select signal and a driving control signal in response to a first enable signal and a second enable signal; a level shifting unit configured to enable a first shifting signal or a second shifting signal to a level of a pumping voltage in response to the select signal and the driving control signal; a first switching unit configured to apply a program voltage to a word line when the first shifting signal is enabled to the level of the pumping voltage; and a second switching unit configured to apply a pass voltage to the word line when the second shifting signal is enabled to the level of the pumping voltage.
    Type: Application
    Filed: November 18, 2010
    Publication date: June 2, 2011
    Applicant: Hynix Semiconductor Inc.
    Inventor: Moon Soo SUNG