Abstract: There is provided a double window/door system for blocking infrared rays which includes a first glass member, a second glass member, and a spacer positioned between the first glass member and the second glass member for maintaining the space between the first glass member and the second glass member, characterized in that one of the surfaces of the first glass member is coated with a nano substance film for blocking near infrared rays and one of the surfaces of the second glass member is coated with a thermochromic substance film.

Abstract: There is provided a double window/door system for blocking infrared rays which includes a first glass member, a second glass member, and a spacer positioned between the first glass member and the second glass member for maintaining the space between the first glass member and the second glass member, characterized in that one of the surfaces of the first glass member is coated with a nano substance film for blocking near infrared rays and one of the surfaces of the second glass member is coated with a thermochromic substance film.

Abstract: The present invention relates to an AFM (atomic force microscope) cantilever including a field effect transistor (FET) and a method for manufacturing the same; and, more particularly, to a method for manufacturing an AFM cantilever including an FET formed by a photolithography process, wherein an effective channel length of the FET is a nano-scale. Therefore, The present invention can easily implement a simulation for manufacturing the AFM cantilever including the FET by accurately controlling the effective channel length. And also, the present invention can manufacture the AFM cantilever including the FET having the effective channel ranging several tens to several hundreds nanometers by applying the low price photolithography device, thereby enhancing an accuracy and yield of the manufacturing process and drastically reducing process costs.

Abstract: The present invention relates to an AFM(atomic force microscope) cantilever including a field effect transistor(FET) and a method for manufacturing the same; and, more particularly, to a method for manufacturing an AFM cantilever including an FET formed by a photolithography process, wherein an effective channel length of the FET is a nono-scale. Therefore, The present invention can easily implement a simulation for manufacturing the AFM cantilever including he FET by accurately controlling the effective channel length. And also, the present invention can manufacturer the AFM cantilever including the FET having the effective channel ranging several tens to several hundreds nanometers by applying the low price photolithography device, thereby enhancing an accuracy and yield of the manufacturing process and drastically reducing process costs.

Abstract: The present invention relates to various types of atomic force microscope (AFM) cantilevers formed by using a photolithography process and an etching process and a method for manufacturing the same, the AFM cantilever includes a handling unit made of a semiconductor substrate, a cantilever unit extendedly formed on a bottom surface of the handling unit in a shape of a rod, a probe unit formed in a shape of a vertically protruded peak by being extendedly formed on one side surface of the cantilever unit and a probe being in contact with a surface of an object to be analyzed by being formed on the peak of the probe unit. Therefore, the present invention has an advantage that the probe of several hundred nanometers can easily formed through a general photolithography process as well as it can easily obtain a natural resonance frequency of the designed cantilever by easily setting a thickness of the cantilever member.