Abstract: There is provided a capacitance sensing apparatus including: a driving circuit unit applying a driving signal having a common level potential and first and second level potentials different from the common level potential to a first capacitor; a sensing circuit unit detecting a change in capacitance generated in the first capacitor; and a gain controlling circuit unit controlling a gain of the sensing circuit unit, wherein the sensing circuit unit includes a second capacitor charged by the change in capacitance of the first capacitor when a level of the driving signal is changed from the first level potential to the common level potential or changed from the common level potential to the second level potential.

Abstract: There is provided a capacitance sensing apparatus including: a driving circuit unit applying a driving signal to a first capacitor; a first integrating circuit unit including a second capacitor charged by a change in capacitance generated in the first capacitor based on the driving signal to generate a first output voltage; and a second integrating circuit unit including a third capacitor charged by a change in capacitance generated in the second capacitor to generate a second output voltage, wherein a level of the second output voltage is changed at least twice during a single period of the driving signal applied to the first capacitor.

Abstract: There are provided an apparatus for sensing capacitance, a method for sensing capacitance, and a touch screen apparatus. The apparatus for sensing capacitance includes; a driving circuit unit applying driving signals to a first capacitor; an integration circuit unit including a second capacitor and a third capacitor respectively charged by a change in capacitance generated in the first capacitor based on the driving signals to generate a predetermined output voltage and calculating a voltage difference between the output voltage of the second capacitor and the output voltage of the third capacitor; and a control unit determining characteristics of a noise signal based on the voltage difference and controlling the driving signals based on the characteristics of the noise signal.

Abstract: There are provided an apparatus for sensing capacitance, a method for sensing capacitance, and a touch screen apparatus. The apparatus for sensing capacitance includes; a first integration circuit unit including a first capacitor charged by a change in capacitance occurring in a sensing electrode; a comparison circuit unit comparing a level of an output signal of the first integration circuit unit with a predetermined reference level; and a noise removal unit including a plurality of switches operating according to an output of the comparison circuit unit, wherein the comparison circuit unit controls an operation of each of the plurality of switches to discharge charges charged in the first capacitor when the level of the output signal of the first integration circuit unit is higher than the reference level.

Abstract: There are provided a touch screen panel and a touch screen apparatus. The touch screen panel includes a plurality of first electrodes formed on a substrate and extending in a first axis direction; and a plurality of second electrodes formed on the substrate and extending in a second axis direction perpendicular to the first axis direction, wherein a plurality of first slits are provided in a diagonal direction with respect to the first axis direction and the second axis direction between the plurality of first electrodes and the plurality of second electrodes, and at least one second slit is formed within each of the plurality of second electrodes.

Abstract: Disclosed herein are a transformer and a method of manufacturing the same. The transformer includes: a primary side winding having a loop shape; a secondary side winding formed on the same plane as that of the primary side winding in a remaining section except for at least a section at which it intersects with the primary side winding and having the same loop shape as that of the primary side winding so as to be electromagnetically coupled to the primary side winding; and an intersecting section formed so that the primary side and secondary side windings having the sum of the turn numbers of 3 or more intersect with each other in a two-layer structure, wherein the intersecting section includes at least one point of intermediate node having one side connected in a first layer and the other side connected in a second layer.

Abstract: There is provided a complementary metal oxide semiconductor (CMOS) power amplifier including: a load unit connected between an operating voltage supply terminal and an output terminal; an amplifying unit formed as a cascode structure between the load unit and a ground, amplifying a power of an input signal input through an input terminal and outputting the amplified signal through an output terminal; and a threshold voltage control unit varying a threshold voltage of the amplifying unit according to a magnitude of the input signal input through the input terminal.

Abstract: Provided is a multi-band amplifier and a method of amplifying a multi-band. The multi-band amplifier includes a wireless signal input terminal into which a first frequency band signal and a second frequency band signal are input, a first impedance matching part connected to the wireless signal input terminal and configured to match an input impedance in a first frequency band, a second impedance matching part connected to the wireless signal input terminal and configured to match an input impedance in a second frequency band, a common source amplifier to which the first impedance matching part and the second impedance matching part, and a common gate amplifier connected to the common source amplifier. Accordingly, performance degradation can be reduced in comparison with a conventional amplifier, broadband amplification as well as narrow band amplification can be performed, and an amplification gain can be adjusted.

Abstract: There is provided a complementary metal oxide semiconductor (CMOS) power amplifier including: a load unit connected between an operating voltage supply terminal and an output terminal; an amplifying unit formed as a cascode structure between the load unit and a ground, amplifying a power of an input signal input through an input terminal and outputting the amplified signal through an output terminal; and a threshold voltage control unit varying a threshold voltage of the amplifying unit according to a magnitude of the input signal input through the input terminal.

Abstract: Disclosed herein is a power amplifier. The power amplifier includes a first common source transistor for amplifying an input signal into a predetermined level, a second common source transistor for compensating for input capacitance and performing auxiliary amplification for the first common source transistor, and a common gate transistor connected to the first common source transistor in a cascode structure, configured to be connected in parallel to the second common source transistor and prevent the first common source transistor from breaking down, and configured to output a signal amplified by a value obtained by adding the gain of the first common source transistor and the gain of the second common source transistor to each other.

Abstract: An active balun with a stacked structure includes: a first amplification unit including a first transistor having a first terminal connected with a first input terminal, a second terminal connected with a power voltage terminal, and a third terminal connected with an output terminal; a second amplification unit including a second transistor having a first terminal connected with a second input terminal, a second terminal connected with the output terminal, and a third terminal connected with a ground; and a capacitance matching unit connected between the first terminal and the third terminal of the first transistor and having a pre-set matching capacitance.

Abstract: Disclosed herein is a power amplifier. The power amplifier includes a first common source transistor for amplifying an input signal into a predetermined level, a second common source transistor for compensating for input capacitance and performing auxiliary amplification for the first common source transistor, and a common gate transistor connected to the first common source transistor in a cascode structure, configured to be connected in parallel to the second common source transistor and prevent the first common source transistor from breaking down, and configured to output a signal amplified by a value obtained by adding the gain of the first common source transistor and the gain of the second common source transistor to each other.

Abstract: Disclosed herein is a power amplification module for a mobile communication terminal. The power amplification module includes a balanced power amplifier configured to divide an input signal using a phase difference, amplify resulting signals, and combine the amplified signals with each other, and a transmission power detection unit connected to an isolation terminal formed on an output side of the balanced power amplifier and configured to amplify a micro-power signal, which is transmitted to the isolation terminal from an outside of the transmission power detection unit, and to transmit the amplified signal. Accordingly, since the detection signal to input terminal and detection signal output terminal of a transmission power detection unit can be easily implemented using an internal circuit, the entire size of the power amplification module can be reduced. Further, characteristic of isolation between the detection signal input terminal and the detection signal output terminal can be improved.

Abstract: There is provided a wide-band amplifier circuit with improved gain flatness. The wide-band amplifier circuit includes a first resonant load unit connected to an operating power terminal, providing a preset first load, and forming a preset first resonant point, a second resonant load unit connected to the operating power terminal, providing a preset second load, and forming a second resonant point set to a frequency different from the first resonant point; a first amplification unit receiving operating power via the first load of the first resonant load unit, having an amplification band characteristic determined according to the first resonant point of the first resonant load unit, and amplifying an input signal; and a second amplification unit receiving operating power via the second load, having an amplification band characteristic determined according to the second resonant point, and amplifying an input signal from the first amplification unit.

Abstract: An active balun with a stacked structure includes: a first amplification unit including a first transistor having a first terminal connected with a first input terminal, a second terminal connected with a power voltage terminal, and a third terminal connected with an output terminal; a second amplification unit including a second transistor having a first terminal connected with a second input terminal, a second terminal connected with the output terminal, and a third terminal connected with a ground; and a capacitance matching unit connected between the first terminal and the third terminal of the first transistor and having a pre-set matching capacitance.

Abstract: There is provided a wide-band amplifier circuit with improved gain flatness. The wide-band amplifier circuit includes a first resonant load unit connected to an operating power terminal, providing a preset first load, and forming a preset first resonant point, a second resonant load unit connected to the operating power terminal, providing a preset second load, and forming a second resonant point set to a frequency different from the first resonant point; a first amplification unit receiving operating power via the first load of the first resonant load unit, having an amplification band characteristic determined according to the first resonant point of the first resonant load unit, and amplifying an input signal; and a second amplification unit receiving operating power via the second load, having an amplification band characteristic determined according to the second resonant point, and amplifying an input signal from the first amplification unit.

Abstract: Disclosed is a wireless communication system applicable to a time-division duplex transceiver system. The time-division duplex mobile communication system can achieve miniaturization, low power consumption and low costs by using a frequency conversion circuit including a mixer and an intermediate frequency (IF) circuit for both transmitter and receiver, and also can cope with multi-band, multi-application systems by using a broadband amplifier, a variable IF filter and a variable gain amplifier.

Abstract: A balun transformer includes a first conductive pattern having one end provided as an input/output port of an unbalanced signal, a second conductive pattern electromagnetically coupled to the first conductive pattern and having both ends provided as input/output ports of a balanced signal, and a first variable capacitor connected between a ground part and a middle part of an electrical length of the second conductive pattern.

Abstract: Disclosed are a multiband output impedance matching circuit having passive devices, an amplifier including a multiband input impedance matching circuit having passive devices, and an amplifier including a multiband input/output impedance matching circuit having passive devices, which can be miniaturized without a separate output terminal buffer and reduce current consumption by using the passive devices.

Abstract: Disclosed is a wireless communication system applicable to a time-division duplex transceiver system. The time-division duplex mobile communication system can achieve miniaturization, low power consumption and low costs by using a frequency conversion circuit including a mixer and an intermediate frequency (IF) circuit for both transmitter and receiver, and also can cope with multi-band, multi-application systems by using a broadband amplifier, a variable IF filter and a variable gain amplifier.