Patents by Inventor Moon-young Jeong
Moon-young Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240118071Abstract: A strain sensor may have a conductive elastic yarn including a first fiber having a predetermined length and a shape of a fiber yarn and a second fiber having electrical conductivity and a sheet shape. The strain sensor may have a pair of wiring members electrically connected to both ends of the conductive elastic yarn. The conductive elastic yarn, with the second fiber wrapped around the first fiber, is twisted in a coil shape.Type: ApplicationFiled: February 1, 2023Publication date: April 11, 2024Inventors: Mi Yong Lee, Seong Hyun Son, Moon Young Jung, Jun Ho Song, Jong Seo Kim, Woo Chang Jeong, Gwan Mu Lee, Dong Seok Suh, Feng Wang
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Publication number: 20240092253Abstract: A method of personalizing a vehicle lamp includes drawing an image made up of a plurality of pixels that implement a vehicle lamp, based on an input by a user. The method also includes converting the drawn image into light-and-shade data that correspond to the pixels, respectively, multiplying a pixel light distribution value, corresponding to each pixel, by a weighted value based on the data resulting from the conversion, adding up results of the multiplication, and deriving total light distribution of the pixels that results when brightness of the vehicle lamp is the same as that of the drawn image. The method further includes comparing the derived total light distribution against a predetermined reference value and determining whether the derived total light distribution satisfies a predetermined light distribution reference, and applying the drawn image to the vehicle lamp when it is determined that a predetermined light distribution reference is satisfied.Type: ApplicationFiled: August 16, 2023Publication date: March 21, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Seung-Pyo Hong, Da-Young Jeong, Jung-Bin Kim, Moon-Soo Park
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Patent number: 11282833Abstract: A semiconductor device is provided. The semiconductor device includes a first substrate, an active region defined by an isolation film in the first substrate, an oxide semiconductor layer on the first substrate in the active region, and not comprising silicon, a recess inside the oxide semiconductor layer, and a gate structure filling the recess, comprising a gate electrode and a capping film on the gate electrode, and having an upper surface on a same plane as an upper surface of the active region.Type: GrantFiled: October 23, 2019Date of Patent: March 22, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Jin Lee, Ji Young Kim, Bong Soo Kim, Hyeon Kyun Noh, Moon Young Jeong
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Patent number: 10930740Abstract: Provided are a multi-direction channel transistor having a gate having an increased effective width and a multi-direction channel, and a semiconductor device including the multi-direction channel transistor, wherein the multi-direction channel transistor includes at least one fin on an active region on a substrate and disposed adjacent to a recess extending in a first direction; a gate line extending in a second direction crossing the first direction and covering at least a portion of the at least one fin and the recess; source/drain regions on the active region at both sides of the gate line; and a channel region in the active region under the gate line between the source/drain regions, wherein the first direction is diagonal to the second direction, and a dielectric film under the gate line has substantially the same thickness on both the at least one fin and the recess.Type: GrantFiled: August 21, 2019Date of Patent: February 23, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Hae-in Jung, Moon-young Jeong, Joon Han, Satoru Yamada
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Publication number: 20200303504Abstract: Provided are a multi-direction channel transistor having a gate having an increased effective width and a multi-direction channel, and a semiconductor device including the multi-direction channel transistor, wherein the multi-direction channel transistor includes at least one fin on an active region on a substrate and disposed adjacent to a recess extending in a first direction; a gate line extending in a second direction crossing the first direction and covering at least a portion of the at least one fin and the recess; source/drain regions on the active region at both sides of the gate line; and a channel region in the active region under the gate line between the source/drain regions, wherein the first direction is diagonal to the second direction, and a dielectric film under the gate line has substantially the same thickness on both the at least one fin and the recess.Type: ApplicationFiled: August 21, 2019Publication date: September 24, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Hae-in JUNG, Moon-young JEONG, Joon HAN, Satoru YAMADA
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Patent number: 10770463Abstract: A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.Type: GrantFiled: June 11, 2019Date of Patent: September 8, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min Hee Cho, Jun Soo Kim, Hui Jung Kim, Tae Yoon An, Satoru Yamada, Won Sok Lee, Nam Ho Jeon, Moon Young Jeong, Ki Jae Hur, Jae Ho Hong
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Publication number: 20200161294Abstract: A semiconductor device is provided. The semiconductor device includes a first substrate, an active region defined by an isolation film in the first substrate, an oxide semiconductor layer on the first substrate in the active region, and not comprising silicon, a recess inside the oxide semiconductor layer, and a gate structure filling the recess, comprising a gate electrode and a capping film on the gate electrode, and having an upper surface on a same plane as an upper surface of the active region.Type: ApplicationFiled: October 23, 2019Publication date: May 21, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Dong Jin LEE, Ji Young KIM, Bong Soo KIM, Hyeon Kyun NOH, Moon Young JEONG
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Publication number: 20190296017Abstract: A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.Type: ApplicationFiled: June 11, 2019Publication date: September 26, 2019Inventors: MIN HEE CHO, JUN SOO KIM, HUI JUNG KIM, TAE YOON AN, SATORU YAMADA, WON SOK LEE, NAM HO JEON, MOON YOUNG JEONG, KI JAE HUR, JAE HO HONG
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Patent number: 10361205Abstract: A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.Type: GrantFiled: November 22, 2017Date of Patent: July 23, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min Hee Cho, Jun Soo Kim, Hui Jung Kim, Tae Yoon An, Satoru Yamada, Won Sok Lee, Nam Ho Jeon, Moon Young Jeong, Ki Jae Hur, Jae Ho Hong
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Publication number: 20180301456Abstract: A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.Type: ApplicationFiled: November 22, 2017Publication date: October 18, 2018Inventors: Min Hee Cho, Jun Soo Kim, Hui Jung Kim, Tae Yoon An, Satoru Yamada, Won Sok Lee, Nam Ho Jeon, Moon Young Jeong, Ki Jae Hur, Jae Ho Hong
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Patent number: 7763159Abstract: A method for preparation of nanocomposite solution, comprises preparing basic silica colloid aqueous solution; providing an electrolysis apparatus by installing a negative electrode containing aluminum and a positive electrode containing silver into the basic silica colloid aqueous solution; and forming nanocomposite by applying voltage to the respective electrodes of the electrolysis apparatus. With this configuration, the present invention provides a method of manufacturing solution dispersed with nanocomposite, further particularly to, a method of manufacturing nanocomposite solution having excellent storability and thermal stability and containing silver having antibacterial function, far infrared radiation function, deodorization function.Type: GrantFiled: December 26, 2003Date of Patent: July 27, 2010Inventors: Chul-sang Jeong, Moon-young Jeong, Byoung-chan Kim, Myung-soo Lee
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Publication number: 20070009672Abstract: A method for preparation of nanocomposite solution, comprises preparing basic silica colloid aqueous solution; providing an electrolysis apparatus by installing a negative electrode containing aluminum and a positive electrode containing silver into the basic silica colloid aqueous solution; and forming nanocomposite by applying voltage to the respective electrodes of the electrolysis apparatus. With this configuration, the present invention provides a method of manufacturing solution dispersed with nanocomposite, further particularly to, a method of manufacturing nanocomposite solution having excellent storability and thermal stability and containing silver having antibacterial function, far infrared radiation function, deodorization function.Type: ApplicationFiled: December 26, 2003Publication date: January 11, 2007Inventors: Chul-sang Jeong, Moon-young Jeong, Byoung-chan Kim, Myung-soo Lee