Abstract: A method for preparing manganese sulfate and zinc sulfate from waste batteries containing manganese and zinc, and more particularly to a method for preparing manganese sulfate and zinc sulfate from waste batteries containing manganese and zinc. Zinc powder and activated carbon are added to a leached solution obtained from a continuous leaching process so as to remove heavy metals and organic materials from the leached solution, and then the leached solution is spray-dried to simultaneously obtain manganese sulfate and zinc sulfate at high-purity by a simple process without generating wastewater. An environmentally friendly waste battery recycling process is thereby provided, because it is not required to use additional chemical substances for neutralization titration or impurity removal in recovering manganese sulfate and zinc sulfate by leaching a waste battery powder.

Abstract: The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a substrate; an n? region formed on the N-type well; a plurality of p? regions penetrated and formed in the n? region; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; and a plurality of p+ regions penetrated and formed in the first layer, wherein a first n+ region among a plurality of the n+ regions and a first p+ region corresponding to the first n+ region are penetrated and formed in each other region of the corresponding first p? region among a plurality of the p? regions.

Abstract: A method for preparing manganese sulfate and zinc sulfate from waste batteries containing manganese and zinc, and more particularly to a method for preparing manganese sulfate and zinc sulfate from waste batteries containing manganese and zinc. Zinc powder and activated carbon are added to a leached solution obtained from a continuous leaching process so as to remove heavy metals and organic materials from the leached solution, and then the leached solution is spray-dried to simultaneously obtain manganese sulfate and zinc sulfate at high-purity by a simple process without generating wastewater. An environmentally friendly waste battery recycling process is thereby provided, because it is not required to use additional chemical substances for neutralization titration or impurity removal in recovering manganese sulfate and zinc sulfate by leaching a waste battery powder.

Abstract: The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a substrate; an n? region formed on the N-type well; a plurality of p? regions penetrated and formed in the n? region; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; and a plurality of p+ regions penetrated and formed in the first layer, wherein a first n+ region among a plurality of the n+ regions and a first p+ region corresponding to the first n+ region are penetrated and formed in each other region of the corresponding first p? region among a plurality of the p? regions.

Abstract: A method for manufacturing a bipolar transistor semiconductor device for preventing a degradation phenomenon of the transistor resulting from a reduction of a lateral electric field intensity. This is achieved by grading an emitter junction by way of refilling an emitter window with polycrystalline silicon. The resulting transistor structure overcomes the etch stop barrier by removing layer of oxide disposed below a layer of nitride along the region where formation of removing sidewalls of polycrystalline silicon have been formed. Subsequently, a doping distribution of the laterally graded emitter junction can easily be obtained by refilling the emitter window with the removed oxide layer with polycrystalline silicon. Because the shallowness of the oxide layer can be selectively and easily controlled, a thickness of the sidewalls is chosen which most efficiently raises the lateral electric field intensity of the transistor junction.