Patents by Inventor Moonkee CHOI

Moonkee CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180277782
    Abstract: A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be famed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.
    Type: Application
    Filed: May 24, 2018
    Publication date: September 27, 2018
    Inventors: Daehyeong KIM, Taeghwan HYEON, Moonkee CHOI, Jiwoong YANG, Kwanghun KANG
  • Patent number: 10026913
    Abstract: A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: July 17, 2018
    Assignees: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, INSTITUTE FOR BASIC SCIENCE
    Inventors: Daehyeong Kim, Taeghwan Hyeon, Moonkee Choi, Jiwoong Yang, Kwanghun Kang
  • Publication number: 20170256730
    Abstract: A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.
    Type: Application
    Filed: July 22, 2015
    Publication date: September 7, 2017
    Inventors: Daehyeong KIM, Taeghwan HYEON, Moonkee CHOI, Jiwoong YANG, Kwanghun KANG