Abstract: A turbulence generating structure for liner cooling enhancement is a liner cooling structure applied to a double-structured side portion formed by a liner and a flow sleeve and includes the liner and a first turbulence generator protruding from a surface space of the liner and including a plurality of ribs arranged in an axial direction, each of the ribs comprising blocks arranged at regular distances in the axial direction and interspaced by cooling holes. The ribs include a first set of adjacent ribs separated by a first passage distance, the first passage distance being repeated in a circumferential direction, and a second set of adjacent ribs separated by a second passage distance, the second passage distance being repeated in the circumferential direction, wherein the first and second sets of adjacent ribs have exactly one rib in common, and the first passage distance is greater than the second passage distance.

Abstract: A shroud structure and a combustor burner using the shroud structure are provided for improving swozzle flow. The shroud structure includes a shroud configured to surround a combustion nozzle and a plurality of swirlers provided along a circumferential row of the combustion nozzle, the shroud having an outer circumferential surface in which a plurality of inlets are formed to draw in compressed air flowing outside the shroud, the compressed air being drawn into the shroud before being mixed with fuel. The inlets are disposed, at positions spaced apart from each other, before a circumferential row of the outer circumferential surface of the shroud that faces a first fuel injector provided on an inner circumferential surface of a combustor casing so that compressed air guided into the inlet is supplied to a region formed around a second fuel injector provided in the swirlers in the shroud.

Abstract: A plate for supporting a plurality of nozzle tubes in a combustion casing of a combustor stably supports the nozzle tubes and adsorbs displacement due to thermal expansion or natural vibrations, thereby reducing combustor maintenance and extending the lifetime of the combustor. The plate includes an inner frame having a plurality of through holes for respectively receiving the plurality of nozzle tubes; a fixing frame fixed on an inner circumferential surface of the combustion casing and configured to support the inner frame; and a mechanical buffer disposed between the fixing frame and the inner frame. The fixing frame has an inner circumferential surface in which a fixing recess having a U-shaped cross-section is formed to receive the mechanical buffer and an outer edge of the inner frame and to receive the mechanical buffer. A method of assembly the nozzle tube support plate facilitates its initial installation and subsequent maintenance.

Abstract: A shroud structure and a combustor burner using the shroud structure are provided for improving swozzle flow. The shroud structure includes a shroud configured to surround a combustion nozzle and a plurality of swirlers provided along a circumferential row of the combustion nozzle, the shroud having an outer circumferential surface in which a plurality of inlets are formed to draw in compressed air flowing outside the shroud, the compressed air being drawn into the shroud before being mixed with fuel. The inlets are disposed, at positions spaced apart from each other, before a circumferential row of the outer circumferential surface of the shroud that faces a first fuel injector provided on an inner circumferential surface of a combustor casing so that compressed air guided into the inlet is supplied to a region formed around a second fuel injector provided in the swirlers in the shroud.

Abstract: A turbulence generating structure for liner cooling enhancement is a liner cooling structure applied to a double-structured side portion formed by a liner and a flow sleeve and includes the liner and a first turbulence generator protruding from a surface space of the liner and including a plurality of ribs arranged in an axial direction, each of the ribs comprising blocks arranged at regular distances in the axial direction and interspaced by cooling holes. The ribs include a first set of adjacent ribs separated by a first passage distance, the first passage distance being repeated in a circumferential direction, and a second set of adjacent ribs separated by a second passage distance, the second passage distance being repeated in the circumferential direction, wherein the first and second sets of adjacent ribs have exactly one rib in common, and the first passage distance is greater than the second passage distance.

Abstract: A plate for supporting a plurality of nozzle tubes in a combustion casing of a combustor stably supports the nozzle tubes and adsorbs displacement due to thermal expansion or natural vibrations, thereby reducing combustor maintenance and extending the lifetime of the combustor. The plate includes an inner frame having a plurality of through holes for respectively receiving the plurality of nozzle tubes; a fixing frame fixed on an inner circumferential surface of the combustion casing and configured to support the inner frame; and a mechanical buffer disposed between the fixing frame and the inner frame. The fixing frame has an inner circumferential surface in which a fixing recess having a U-shaped cross-section is formed to receive the mechanical buffer and an outer edge of the inner frame and to receive the mechanical buffer. A method of assembly the nozzle tube support plate facilitates its initial installation and subsequent maintenance.

Abstract: Provided is a super junction semiconductor device. The super junction semiconductor device includes a vertical pillar region located in an active region and horizontal pillar regions located in a termination region that are connected with each other while simultaneously not floating the entire pillar region in the termination region. Thus, a charge compensation difference, generated among pillar regions, is caused to be offset, although the length of the termination region is relatively short.

Abstract: There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.

Abstract: There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed on a substrate, and a transition area disposed between the cell area and the junction termination area, and the cell area, the junction termination area, and the transition area each include one or more unit cells comprising a N-type pillar region and a P-type pillar region among a plurality of N-type pillar regions and a P-type pillar regions that are alternated between the cell area and the junction termination area.

Abstract: There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.

Abstract: Provided is a super junction semiconductor device. The super junction semiconductor device includes a vertical pillar region located in an active region and horizontal pillar regions located in a termination region that are connected with each other while simultaneously not floating the entire pillar region in the termination region. Thus, a charge compensation difference, generated among pillar regions, is caused to be offset, although the length of the termination region is relatively short.

Abstract: There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, and a super junction area that is disposed above the substrate. The super junction area may include pillars of different doping types that are alternately disposed. One of the pillars of the super junction area may have a doping concentration that gradually decreases and then increases from bottom to top in a vertical direction of the semiconductor device.

Abstract: There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed on a substrate, and a transition area disposed between the cell area and the junction termination area, and the cell area, the junction termination area, and the transition area each include one or more unit cells comprising a N-type pillar region and a P-type pillar region among a plurality of N-type pillar regions and a P-type pillar regions that are alternated between the cell area and the junction termination area.

Abstract: There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.

Abstract: Provided is a method for manufacturing a composite material having a thin thickness, a low thermal expansion coefficient and a high thermal dissipation characteristic, the composite material manufactured by the manufacturing method, and a copper clad laminate using the composite material. The composite material using a unidirectional carbon fiber prepreg fabric manufactured through the steps of: manufacturing a unidirectional carbon fiber prepreg; cutting the manufactured unidirectional carbon fiber prepreg to a given width; weaving the unidirectional carbon fiber prepreg cut to the given width to form a fabric; and curing the woven unidirectional carbon fiber prepreg fabric.

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, and a super junction area that is disposed above the substrate. The super junction area may include pillars of different doping types that are alternately disposed. One of the pillars of the super junction area may have a doping concentration that gradually decreases and then increases from bottom to top in a vertical direction of the semiconductor device.

Abstract: Disclosed is a power semiconductor device capable of transmitting a gate signal from any upward, downward, leftward, and rightward directions on a plane to reduce deviation in the gate signal's transmission speed and impedance.