Abstract: By using the combination of a pre-existing command signal that is common to two memory devices and a non-shared command signal that is applied individually to each of the devices, embodiments of the invention may operate in a mirror mode, thereby preventing unwanted signal degradation due to stub loads. Because embodiments of the invention do not require additional dedicated pins and/or pads compared to the conventional art, it is possible to achieve mirror mode operation in a smaller device package.

Abstract: In one embodiment, a latency circuit generates the latency signal based on CAS latency information and read information. For example, the latency circuit may include a clock signal generating circuit generating a plurality of transfer signals and generating a plurality of sampling clock signals based on and corresponding to the plurality of transfer signals such that a timing relationship is created between the transfer signals and the sampling clock signals. The latency circuit may further include a latency signal generator selectively storing the read information based on the sampling clock signals, and selectively outputting the stored read information as the latency signal based on the transfer signals. The latency signal generator may also delay the read information such that the delayed, read information is stored based on the sampling clock signals.

Abstract: A semiconductor memory device includes a mode setting register for generating a parallel bit test signal and a code according to an externally applied mode setting register code in response to a mode setting command; a data input circuit for receiving and outputting at least one bit of externally applied data in response to a write command; and a test pattern data generating circuit for receiving the parallel bit test signal and a predetermined bit from the code to generate a test pattern data in response to the at least one bit of externally applied data received from the data input circuit.

Abstract: In one embodiment, a latency circuit generates the latency signal based on CAS latency information and read information. For example, the latency circuit may include a clock signal generating circuit generating a plurality of transfer signals and generating a plurality of sampling clock signals based on and corresponding to the plurality of transfer signals such that a timing relationship is created between the transfer signals and the sampling clock signals. The latency circuit may further include a latency signal generator selectively storing the read information based on the sampling clock signals, and selectively outputting the stored read information as the latency signal based on the transfer signals. The latency signal generator may also delay the read information such that the delayed, read information is stored based on the sampling clock signals.

Abstract: There are provided a method and circuit for controlling generation of a column selection line signal. The method includes determining whether a current mode is a normal operation mode or a test operation mode; receiving an activated test operation mode signal and an activated first clock signal and outputting a column selection line signal with an activation time proportional to an activation time of the first clock signal, when the current mode is the test operation mode; and outputting the column selection line signal that is activated in response to the activated first clock signal and is deactivated in response to an activated second clock signal, when the current mode is the normal operation mode. An activation time of the first clock signal is proportional to that of an external clock signal. In the test operation mode, a command is performed during one period of the external clock signal.

Abstract: By using the combination of a pre-existing command signal that is common to two memory devices and a non-shared command signal that is applied individually to each of the devices, embodiments of the invention may operate in a mirror mode, thereby preventing unwanted signal degradation due to stub loads. Because embodiments of the invention do not require additional dedicated pins and/or pads compared to the conventional art, it is possible to achieve mirror mode operation in a smaller device package.

Abstract: A semiconductor memory device includes a mode setting register for generating a parallel bit test signal and a code according to an externally applied mode setting register code in response to a mode setting command; a data input circuit for receiving and outputting at least one bit of externally applied data in response to a write command; and a test pattern data generating circuit for receiving the parallel bit test signal and a predetermined bit from the code to generate a test pattern data in response to the at least one bit of externally applied data received from the data input circuit.

Abstract: There are provided a method and circuit for controlling generation of a column selection line signal. The method includes determining whether a current mode is a normal operation mode or a test operation mode; receiving an activated test operation mode signal and an activated first clock signal and outputting a column selection line signal with an activation time proportional to an activation time of the first clock signal, when the current mode is the test operation mode; and outputting the column selection line signal that is activated in response to the activated first clock signal and is deactivated in response to an activated second clock signal, when the current mode is the normal operation mode. An activation time of the first clock signal is proportional to that of an external clock signal. In the test operation mode, a command is performed during one period of the external clock signal.

Abstract: An integrated circuit memory device can include a memory cell array having a plurality of memory cells, and a bit line sense amplifier configured to amplify data on a pair of bit lines from a memory cell of the memory cell array and to provide the amplified data on a data line and a complementary data line. An active load circuit includes a first load device electrically connected between the data line and a voltage source wherein an electrical resistance of the first load device is varied responsive to a voltage level of the data line. The active load circuit also includes a second load device electrically connected between the complementary data line and the voltage source wherein an electrical resistance of the second load device is varied responsive to a voltage level of the complementary data line. Related methods are also discussed.

Abstract: A signal line driving circuit includes an inversion buffer, a pulse generator, a first signal buffer, and a second signal buffer. Here, the inversion buffer receives an input signal and includes an output terminal connected to the signal line to drive the signal line. The pulse generator receives the input signal to generate a pulse signal. The first signal buffer has a control terminal connected to an output terminal of the pulse generator and an input/output terminal connected to a node of the signal line. The first signal buffer reduces the rising transition time of a signal propagating on the signal line in response to a first control signal. The second signal buffer has a control terminal connected to the output terminal of the pulse generator and an input/output terminal connected to the node of the signal line. The second signal buffer reduces the falling transition time of a signal propagating on the signal line in response to a first control signal.

Abstract: An integrated circuit memory device can include a memory cell array having a plurality of memory cells, and a bit line sense amplifier configured to amplify data on a pair of bit lines from a memory cell of the memory cell array and to provide the amplified data on a data line and a complementary data line. An active load circuit includes a first load device electrically connected between the data line and a voltage source wherein an electrical resistance of the first load device is varied responsive to a voltage level of the data line. The active load circuit also includes a second load device electrically connected between the complementary data line and the voltage source wherein an electrical resistance of the second load device is varied responsive to a voltage level of the complementary data line. Related methods are also discussed.

Abstract: A signal line driving circuit includes an inversion buffer, a pulse generator, a first signal buffer, and a second signal buffer. Here, the inversion buffer receives an input signal and includes an output terminal connected to the signal line to drive the signal line. The pulse generator receives the input signal to generate a pulse signal. The first signal buffer has a control terminal connected to an output terminal of the pulse generator and an input/output terminal connected to a node of the signal line. The first signal buffer reduces the rising transition time of a signal propagating on the signal line in response to a first control signal. The second signal buffer has a control terminal connected to the output terminal of the pulse generator and an input/output terminal connected to the node of the signal line. The second signal buffer reduces the falling transition time of a signal propagating on the signal line in response to a first control signal.

Abstract: A semiconductor capable of reducing skew between plural-bit output data by using a plurality of data output drivers and a method thereof. Each data output driver comprises a driver connected between an external power voltage and an external ground voltage, for pulling-up the output data in response to a first state of input data and for pulling-down the output data in response to a second state of the input data; a first delay circuit for varying transition delay time of the input data having the first state in response to signals received from other data output drivers; and a second delay circuit for varying transition delay time of the input data having the second state in response to signals received from other data output drivers.

Abstract: A semiconductor capable of reducing skew between plural-bit output data by using a plurality of data output drivers and a method thereof. Each data output driver comprises a driver connected between an external power voltage and an external ground voltage, for pulling-up the output data in response to a first state of input data and for pulling-down the output data in response to a second state of the input data; a first delay circuit for varying transition delay time of the input data having the first state in response to signals received from other data output drivers; and a second delay circuit for varying transition delay time of the input data having the second state in response to signals received from other data output drivers.