Patents by Inventor Moran Gao

Moran Gao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240204134
    Abstract: A semiconductor light emitting element and a manufacture method thereof are provided. The semiconductor light emitting element includes: a substrate, an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer being arranged sequentially from bottom to top, and further includes a surface plasmon excition layer being arranged on the p-type semiconductor layer and a surface plasmon excited layer being arranged between the quantum well layer and the p-type semiconductor layer, or the surface plasmon excitation layer being arranged between the p-type semiconductor layer and the surface plasmon excitation layer, or the surface plasmon excitation layers being arranged respectively between the quantum well layer and the p-type semiconductor layer and between the p-type semiconductor layer and the surface plasmon excitation layer.
    Type: Application
    Filed: March 1, 2022
    Publication date: June 20, 2024
    Inventors: Jinjian Zheng, Moran Gao, Jingfeng Bi, Weihong Fan, Senlin Li, Jiaming Zeng, Yuanjie Wu, Chengjun Zhang
  • Publication number: 20240204133
    Abstract: A semiconductor light emitting element is provided and includes: a substrate, an n-type semiconductor layer, a doped quantum well layer, a control layer for suppressing light attenuation with age and a p-type semiconductor layer from bottom to top. The control layer for suppressing light attenuation with age sequentially includes an undoped quantum well layer having at least one undoped barrier layer, a first control layer for suppressing light attenuation and/or a second control layer for suppressing light attenuation from bottom to top. The present disclosure reduces probability of Si of the doped quantum well layer and Mg of the p-type semiconductor layer diffusing and coming into contact with each other during long-term aging process, thereby suppressing light attenuation with age of the semiconductor light emitting element. A light attenuation of 1000 hours is reduced from 30% or higher (even 50% or higher) to within 10%.
    Type: Application
    Filed: March 1, 2022
    Publication date: June 20, 2024
    Inventors: Jinjian Zheng, Moran Gao, Jingfeng Bi, Weihong Fan, Jiaming Zeng, Chengjun Zhang