Patents by Inventor Mordecai Rothschild

Mordecai Rothschild has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4868005
    Abstract: The invention relates to visible-laser deposition reactions of metal containing oxyhalide and carbonyl vapors, such as, chromyl chloride vapor, CrO.sub.2 Cl.sub.2, or cobalt carbonyl, Co.sub.2 (CO).sub.8, for direct writing of metal containing opaque patterns on various substrates (Si, SiO.sub.2, GaAs and glass). Deposition at low laser power is by photolysis of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr.sub.2 O.sub.3 /CrO.sub.2 or cobalt thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr.sub.2 O.sub.3 or cobalt, can be grown with this process, the former at rates up to 3 .mu.m/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic.
    Type: Grant
    Filed: March 10, 1988
    Date of Patent: September 19, 1989
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Mordecai Rothschild
  • Patent number: 4834834
    Abstract: A method for maskless patterning and etching of metals is disclosed. The method comprises the steps of providing a metal, forming a passivating layer of an oxide or nitride upon the surface of the metal, exposing the metal to a halogenous atmosphere, while patterning the metal using a directed energy beam to selectively replace the oxides or nitrides with halides, and heating the patterned metal while exposing it to an etchant to etch regions located below the halogenated surfaces leaving the remaining passivated regons intact.
    Type: Grant
    Filed: November 20, 1987
    Date of Patent: May 30, 1989
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Mordecai Rothschild
  • Patent number: 4748045
    Abstract: The invention relates to visible-laser deposition reactions of metal containing oxyhalide and carbonyl vapors, such as, chromyl chloride vapor, CrO.sub.2 Cl.sub.2, or cobalt carbonyl, Co.sub.2 (CO).sub.8, for direct writing of metal containing opaque patterns on various substrates (S.sub.i, S.sub.i O.sub.2, GaAs and glass). Deposition at low laser power is by photolyses of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr.sub.2 O.sub.3 /CrO.sub.2 or cobalt thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr.sub.2 O.sub.3 or cobalt, can be grown with this process, the former at rates up to 3 /.mu.m/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic.
    Type: Grant
    Filed: March 16, 1987
    Date of Patent: May 31, 1988
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Mordecai Rothschild
  • Patent number: 4668528
    Abstract: The invention relates to visible-laser deposition reactions of metal containing oxyhalide vapors, such as, chromyl chloride vapor, CrO.sub.2 Cl.sub.2, for direct writing of metal containing opaque oxide patterns on various substrates (S.sub.i, S.sub.i O.sub.2, GaAs and glass). Deposition at low laser power is by photolyses of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr.sub.2 O.sub.3 /CrO.sub.2 thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr.sub.2 O.sub.3, can be grown with this process, the latter at rates up to 3 .mu.m/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic. Mass spectrometer and optical transmission measurements show that surface kinetics dominate the nucleation and growth rates.
    Type: Grant
    Filed: April 9, 1986
    Date of Patent: May 26, 1987
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Claudio Arnone, Mordecai Rothschild