Patents by Inventor Morgan E. Ware

Morgan E. Ware has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quantum Structure Getter for Radiation Hardened Transistors
    Publication number: 20220285499
    Abstract: A microelectronic device that is radiation hardened through the incorporation of a quantum structure getter (QSG) is provided. The device, such as a field effect transistor (FET) includes a conductive channel and a material stack comprising: a capping layer, one or more barrier layers comprising a high band gap, one or more quantum structures comprising a small band gap, and a substrate. The quantum structures are positioned in close proximity to the conductive channel to form a quantum well charge getter. The getter forms a low energy area beneath the FET, which traps and confines electron-hole pair wave functions produced from ionizing radiation, causing the wave functions overlap, recombine, and produce light emission. The quantum structures getter the wave functions, which reduces the ionized photocurrent that reaches the conducting channel, thereby hardening the microelectronic device against ionizing radiation.
    Type: Application
    Filed: December 16, 2021
    Publication date: September 8, 2022
    Applicant: The United States of America, as represented by the Secretary of the Navy
    Inventors: Timothy Allen Morgan, Matthew J Gadlage, Kevin Goodman, Morgan E Ware, Pijush Kanti Ghosh
  • Micro-hall effect devices for simultaneous current and temperature measurements for both high and low temperature environments
    Patent number: 11137310
    Abstract: GaN/Al0.20Ga0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of ?183° C. and 252° C.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: October 5, 2021
    Inventors: Thomas P. White, Satish Shetty, Morgan E. Ware, H. Alan Mantooth, Gregory J. Salamo
  • MICRO-HALL EFFECT DEVICES FOR SIMULTANEOUS CURRENT AND TEMPERATURE MEASUREMENTS FOR BOTH HIGH AND LOW TEMPERATURE ENVIRONMENTS
    Publication number: 20190120712
    Abstract: GaN/Al0.20Ga0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of ?183° C. and 252° C.
    Type: Application
    Filed: October 16, 2018
    Publication date: April 25, 2019
    Inventors: Thomas P. White, Satish Shetty, Morgan E. Ware, H. Alan Mantooth, Gregory J. Salamo