Abstract: To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

Abstract: To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

Abstract: An object is to provide a method for processing a semiconductor substrate that can form an oxide film less prone to take in impurities affecting semiconductor characteristics on the surface. An RCA-cleaned semiconductor substrate is treated with diluted hydrofluoric acid (HF) to remove a native oxide film formed on the semiconductor substrate during the RCA cleaning process (step S8). For conditions of the treatment with diluted hydrofluoric acid, the concentration of hydrofluoric acid is about 50%, the ratio of hydrofluoric acid to pure water is 1:100, and the processing time is about one minute. Finally, the semiconductor substrate from which the native oxide film has been removed is stored in a clean atmosphere of oxygen for a predetermined time period to form an oxide film on the semiconductor substrate surface (step S9). The percentage of oxygen in the atmosphere of oxygen in the place for storage is about 20 to 100%.

Abstract: An object is to obtain a semiconductor wafer evaluation method and a semiconductor device manufacturing method having a reduced turn-around time and requiring no process apparatus and no dielectric breakdown characteristic evaluation device in evaluation of the dielectric breakdown characteristic of the oxide film. A sample wafer (1) is etched by using an SC-1 solution bath (2) to change process defects caused in the fabrication process including mirror polishing into pits. The number of pits is detected with a dust particle inspection system, and the dielectric breakdown characteristic of the sample wafer 1 can be evaluated by using the number of detected pits and previously obtained relations between the number of pits and the dielectric breakdown characteristic.