Abstract: A production method of a hole blocking layer includes: a liquid layer forming step that causes a liquid composition and a surface of a member on which the hole blocking layer is to be formed, to contact with each other thereby forming a liquid layer comprising the liquid composition on the surface of the member on which the hole blocking layer is to be formed, the liquid composition containing a zinc source comprising bis(acetylacetonato)zinc, a complexing agent comprising acetylacetone, and a polar solvent; and a drying step that heats the liquid layer formed by the liquid layer forming step to vaporize the complexing agent and the polar solvent from the liquid layer thereby forming a hole blocking layer comprising zinc oxide on the surface of the member on which the hole blocking layer is to be formed.

Abstract: Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.

Abstract: A production method of a hole blocking layer includes: a liquid layer forming step that causes a liquid composition and a surface of a member on which the hole blocking layer is to be formed, to contact with each other thereby forming a liquid layer comprising the liquid composition on the surface of the member on which the hole blocking layer is to be formed, the liquid composition containing a zinc source comprising bis(acetylacetonato)zinc, a complexing agent comprising acetylacetone, and a polar solvent; and a drying step that heats the liquid layer formed by the liquid layer forming step to vaporize the complexing agent and the polar solvent from the liquid layer thereby forming a hole blocking layer comprising zinc oxide on the surface of the member on which the hole blocking layer is to be formed.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.