Abstract: A substrate transfer apparatus for transferring a substrate includes a plurality of vacuum transfer chambers, each having therein a substrate transfer mechanism for holding and transferring the substrate, and an intermediate chamber disposed between the vacuum transfer chambers adjacent to each other. When one of the vacuum transfer chambers adjacent to each other is set as a first vacuum transfer chamber and the other is set as a second vacuum transfer chamber, a first substrate loading/unloading port is disposed between the intermediate chamber and the first vacuum transfer chamber and a second substrate loading/unloading port is disposed between the intermediate chamber and the second vacuum transfer chamber. A gate valve is provided only for the second substrate loading/unloading port. Further, the first and the second substrate loading/unloading port have different height positions.

Abstract: A substrate transfer apparatus for transferring a substrate includes a plurality of vacuum transfer chambers, each having therein a substrate transfer mechanism for holding and transferring the substrate, and an intermediate chamber disposed between the vacuum transfer chambers adjacent to each other. When one of the vacuum transfer chambers adjacent to each other is set as a first vacuum transfer chamber and the other is set as a second vacuum transfer chamber, a first substrate loading/unloading port is disposed between the intermediate chamber and the first vacuum transfer chamber and a second substrate loading/unloading port is disposed between the intermediate chamber and the second vacuum transfer chamber. A gate valve is provided only for the second substrate loading/unloading port. Further, the first and the second substrate loading/unloading port have different height positions.

Abstract: A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A process gas is introduced into the plasma producing chamber. The substrate is mounted on a mounting stage disposed in the substrate processing chamber, and a bias voltage is applied to the mounting stage. The ion trap has grounded conductors and insulating materials covering surfaces of the conductors.

Abstract: In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.

Abstract: A substrate processing apparatus that can prevent formation of deposit in openings of a plurality of gas supply holes leading into a processing chamber. Each of the gas supply holes is configured to uniformly supply a processing gas, whose molecules are turned into clusters, into the processing chamber and to prevent liquefaction of processing gas when the processing gas is supplied into the processing chamber.

Abstract: A substarate processing apparatus capable of reducing the capacity of a space in an internal chamber. The internal chamber is housed in a space in an external chamber. A gas supply unit supplies a process gas into the space in the internal chamber. The space in the external chamber is under a reduced pressure or filled with an inert gas. An enclosure being movable and included in the internal chamber defines the space in the internal chamber with a stage heater included in the internal chamber. When a wafer is transferred in and out by a transfer arm used to transfer the wafer, the enclosure exits out of a motion range within which the transfer arm can move.

Abstract: A substrate processing apparatus of which through holes in a mounting stage can be properly sealed. A substrate processing apparatus comprises a plate-like mounting stage having a plurality of first through holes, a base member including a plurality of second through holes that have female thread portions, a plurality of pin-shaped members being passed through and fitted into the first and second through holes and including flange portions, a plurality of sealing surfaces, and a plurality of sealing members disposed such as to enclose openings of the first through holes. One ends of the pin-shaped members project out from the sealing surfaces, and the other ends have male thread portions capable of engaging with female thread portions of the base member. When the base member moves away from the mounting stage, an end of each of the female thread portions comes into abutment with an end of each of the male thread portions.

Abstract: A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A process gas is introduced into the plasma producing chamber. The substrate is mounted on a mounting stage disposed in the substrate processing chamber, and a bias voltage is applied to the mounting stage. The ion trap has grounded conductors and insulating materials covering surfaces of the conductors.

Abstract: A valve element that can prevent particles rebounding from an exhausting pump from entering a chamber and also prevent a decrease in exhaust efficiency. The valve element has a through hole that penetrates the valve element along an exhaust flow in an exhaust flow passage between the chamber in which a substrate is subjected to predetermined processing and the exhausting pump having rotary blades rotating at high speed, and a particle trap that covers the through hole. The particle trap has a plurality of preventive members that are arranged such as to obstruct particles rebounding from the exhausting pump. The ratio of openings of the particle trap to the exhaust flow in the exhaust flow passage is not less than a predetermined value.

Abstract: A substrate processing apparatus includes a processing vessel; a mounting table for mounting the substrate thereon in the processing vessel; a gas inlet unit provided in the processing vessel; a gas supply mechanism for supplying a hydrogen-containing gas into the processing vessel through the gas inlet unit; a gas discharge port provided at the processing vessel; a gas exhaust mechanism for exhausting an inside of the processing vessel through the gas discharge port; a catalyst provided in the processing vessel; and a heating unit for heating the catalyst. Hydrogen radicals are formed in the processing vessel by a catalytic cracking reaction between the hydrogen-containing gas and the catalyst of high temperature, and the substrate is processed by the hydrogen radicals.

Abstract: A substrate processing apparatus of which through holes in a mounting stage can be properly sealed. A substrate processing apparatus comprises a plate-like mounting stage having a plurality of first through holes, a base member including a plurality of second through holes that have female thread portions, a plurality of pin-shaped members being passed through and fitted into the first and second through holes and including flange portions, a plurality of sealing surfaces, and a plurality of sealing members disposed such as to enclose openings of the first through holes. One ends of the pin-shaped members project out from the sealing surfaces, and the other ends have male thread portions capable of engaging with female thread portions of the base member. When the base member moves away from the mounting stage, an end of each of the female thread portions comes into abutment with an end of each of the male thread portions.

Abstract: A substarate processing apparatus capable of reducing the capacity of a space in an internal chamber. The internal chamber is housed in a space in an external chamber. A gas supply unit supplies a process gas into the space in the internal chamber. The space in the external chamber is under a reduced pressure or filled with an inert gas. An enclosure being movable and included in the internal chamber defines the space in the internal chamber with a stage heater included in the internal chamber. When a wafer is transferred in and out by a transfer arm used to transfer the wafer, the enclosure exits out of a motion range within which the transfer arm can move.

Abstract: A substrate processing apparatus that can prevent formation of deposit in openings of a plurality of gas supply holes leading into a processing chamber. Each of the gas supply holes is configured to uniformly supply a processing gas, whose molecules are turned into clusters, into the processing chamber and to prevent liquefaction of processing gas when the processing gas is supplied into the processing chamber.