Abstract: A system for measuring a shape, includes an external storage unit storing tolerances of first and second shape factors defining a design shape of a measuring object; a first measuring tool measuring the first shape factor of the measuring object to obtain measurement data; and a measurement processing unit determining a shape of the measuring object. The measurement processing unit includes; a comparison module comparing the measurement data of the first shape factor with the tolerance of the first shape factor; a verification module composing a predicted shape using the measurement data and verifying whether the predicted shape is formed as a figure; a calculation module calculating predicted data of the second shape factor from the predicted shape; and a determination module determining a measurement shape by comparing the predicted data with the tolerance of the second shape factor.

Abstract: An imprint mold including a substrate of transparent material having a first principal surface having a pattern region and a second principal surface; a first light shielding film provided on the first principal surface, along a periphery of the pattern region; and a second light shielding film provided on the second principal surface, having an opening including an opposite region to the pattern region, a part of the second light shielding film opposite to the first light shielding film. In a cross section perpendicular to the substrate, the maximum incident angle of the light for curing a transfer layer to the second principal surface is less than an angle between a perpendicular line of the second principal surface and a line connecting an end of the second light shielding film on a side of the opening and a farthest end of the first light shielding film from the pattern region.

Abstract: An imprint mold including a substrate of transparent material having a first principal surface having a pattern region and a second principal surface; a first light shielding film provided on the first principal surface, along a periphery of the pattern region; and a second light shielding film provided on the second principal surface, having an opening including an opposite region to the pattern region, a part of the second light shielding film opposite to the first light shielding film. In a cross section perpendicular to the substrate, the maximum incident angle of the light for curing a transfer layer to the second principal surface is less than an angle between a perpendicular line of the second principal surface and a line connecting an end of the second light shielding film on a side of the opening and a farthest end of the first light shielding film from the pattern region.

Abstract: A system for measuring a shape, includes an external storage unit storing tolerances of first and second shape factors defining a design shape of a measuring object; a first measuring tool measuring the first shape factor of the measuring object to obtain measurement data; and a measurement processing unit determining a shape of the measuring object. The measurement processing unit includes; a comparison module comparing the measurement data of the first shape factor with the tolerance of the first shape factor; a verification module composing a predicted shape using the measurement data and verifying whether the predicted shape is formed as a figure; a calculation module calculating predicted data of the second shape factor from the predicted shape; and a determination module determining a measurement shape by comparing the predicted data with the tolerance of the second shape factor.

Abstract: It is an object of the present invention to effectively manufacture a charged-particle beam lithography mask, an X-ray lithography mask, or an extreme ultraviolet beam lithography mask by using, for example, an existing writer such as an electron beam writer for photomasks, while achieving improvement in processing accuracy of a mask pattern. A lithography mask (1) comprises a substrate (2) which has a lower surface provided substantially at the center thereof with an opening (3) and a self-supporting membrane (m) having a pattern region (4) substantially at the center of an upper surface of the substrate (2) corresponding to the opening (3). The self-supporting membrane (m) is provided with through-holes (h) of a mask pattern in it or an absorber or scatterer of a mask pattern on it, and the pattern region (4) and a peripheral region around the pattern region (5) are in one plane.

Abstract: Provided is a method of inspecting a photo-mask, which enables performing destruction inspection such as contact-type inspection and cross section inspection. The method of inspecting a photo-mask comprises performing destruction inspection with respect to the photo-mask for inspection, by using one of two photo-masks that have been successively manufactured under the same conditions that are set, as a photo-mask for inspection, and using the other of them as a product.

Abstract: It is an object of the present invention to effectively manufacture a charged-particle beam lithography mask, an X-ray lithography mask, or an extreme ultraviolet beam lithography mask by using, for example, an existing writer such as an electron beam writer for photomasks, while achieving improvement in processing accuracy of a mask pattern. A lithography mask (1) comprises a substrate (2) which has a lower surface provided substantially at the center thereof with an opening (3) and a self-supporting membrane (m) having a pattern region (4) substantially at the center of an upper surface of the substrate (2) corresponding to the opening (3). The self-supporting membrane (m) is provided with through-holes (h) of a mask pattern in it or an absorber or scatterer of a mask pattern on it, and the pattern region (4) and a peripheral region around the pattern region (5) are in one plane.

Abstract: The manufacturing time of a mask is shortened. In a defect inspection of a mask having a light-shielding portion composed of a resist film, the presence or absence of defects, such as burr and film loss of a resist pattern on the mask, and foreign matters, etc. is inspected by reading optical information on either or both of reflection light and transmission light with respect to inspection light irradiated to the mask by the use of a foreign-matter inspection system. More specifically, in the inspection of the mask, it is possible to perform the defect inspection without performing a comparison inspection that requires a great amount of measuring time and advanced techniques. Therefore, the inspecting process of the mask can be simplified, and also the inspecting time of the mask can be shortened.

Abstract: Provided is a method of inspecting a photo-mask, which enables performing destruction inspection such as contact-type inspection and cross section inspection. The method of inspecting a photo-mask comprises performing destruction inspection with respect to the photo-mask for inspection, by using one of two photo-masks that have been successively manufactured under the same conditions that are set, as a photo-mask for inspection, and using the other of them as a product.

Abstract: It is an object of the present invention to provide manufacturing method of a photomask, the method enabling the provision of a resist pattern photomask which is free from the sticking of foreign matter and has high quality. The manufacturing method of a photomask comprises applying a photoresist directly to a substrate and patterning the photoresist to produce a photomask with a resist pattern, the method further comprising a process of attaching a pellicle to the substrate before inspection processs after forming the resist pattern by carrying out a process of applying the resist to the substrate, an exposure/drawing process and a developing process.

Abstract: The manufacturing time of a mask is shortened. In a defect inspection of a mask having a light-shielding portion composed of a resist film, the presence or absence of defects, such as burr and film loss of a resist pattern on the mask, and foreign matters, etc. is inspected by reading optical information on either or both of reflection light and transmission light with respect to inspection light irradiated to the mask by the use of a foreign-matter inspection system. More specifically, in the inspection of the mask, it is possible to perform the defect inspection without performing a comparison inspection that requires a great amount of measuring time and advanced techniques. Therefore, the inspecting process of the mask can be simplified, and also the inspecting time of the mask can be shortened.