Abstract: Methods for evaluating a quality of a semiconductor substrate. In one aspect, etching a surface of the semiconductor substrate by dry-etching, detecting bright points on the surface of the etched surface with a foreign matter inspection device, and evaluating the quality of the semiconductor substrate based on the number and/or distribution pattern of the detected bright points are included. In another aspect, etching a surface of the semiconductor substrate by dry-etching, detecting bright points on the surface of the etched surface with a foreign matter inspection device, and evaluating the quality of the semiconductor substrate are included, and the evaluated quality is a type of metal contaminant contained in the substrate, and the type of metal contaminant is identified by conducting elemental analysis of the detected bright points.

Abstract: A method of evaluating the presence or absence and/or degree of metal contamination of a semiconductor substrate including etching the surface of the semiconductor substrate by SC-1 cleaning and/or a HF cleaning, detecting bright points on the surface of the etched substrate with a foreign matter inspection device, and evaluating the presence or absence and/or degree of metal contamination of the semiconductor substrate based on the distribution pattern of bright points detected on the surface of the substrate. Also disclosed is a method of manufacturing a semiconductor substrate comprising mirror polishing a silicon wafer surface, wherein the mirror polishing is conducted using a slurry having a Cu content of approximately equal to or less than 10 ppb, a Ni content of approximately equal to or less than 10 ppb, and an Fe content of approximately equal to or less than 1,000 ppb, and evaluating the semiconductor substrate as above.

Abstract: Methods for evaluating a quality of a semiconductor substrate. In one aspect, etching a surface of the semiconductor substrate by dry-etching, detecting bright points on the surface of the etched surface with a foreign matter inspection device, and evaluating the quality of the semiconductor substrate based on the number and/or distribution pattern of the detected bright points are included. In another aspect, etching a surface of the semiconductor substrate by dry-etching, detecting bright points on the surface of the etched surface with a foreign matter inspection device, and evaluating the quality of the semiconductor substrate are included, and the evaluated quality is a type of metal contaminant contained in the substrate, and the type of metal contaminant is identified by conducting elemental analysis of the detected bright points.

Abstract: The method of manufacturing a semiconductor substrate including mirror polishing a silicon wafer surface, wherein the mirror polishing is conducted using a slurry having a Cu content of approximately equal to or less than 10 ppb, a Ni content of approximately equal to or less than 10 ppb, and an Fe content of approximately equal to or less than 1,000 ppb. The method of evaluating a quality of a semiconductor substrate including etching the surface of the semiconductor substrate by SC-1 cleaning and/or a HF cleaning, detecting bright points on the surface of the etched substrate with a foreign matter inspection device, and evaluating the quality of the semiconductor substrate based on the bright points detected on the surface of the substrate.