Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.

Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.

Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.

Abstract: A method for creating a pattern on a photomask includes steps of recognizing a space between main patterns by using pattern data which indicate the main patterns to be adjacently transferred onto a wafer, determining a 1st rule about arrangement of an assist pattern on the photomask, the assist pattern being adjacent to the main patterns and not being transferred onto the wafer, estimating a depth of focus in the presence of the assist pattern among the main patterns, determining a 2nd rule about arrangement of the assist pattern on the photomask to improve the depth of focus in the presence of the 1st assist pattern among the main patterns in a group having one or more number of appearance times of the space between main patterns, and correcting the assist pattern on the photomask using the assist pattern data on the basis of the 2nd rule.

Abstract: A semiconductor device yield calculation method and a computer program that include selecting from a designed device pattern a specified first pattern and a second pattern that differs from the first pattern, finding a probability that the second pattern passes a test when the first pattern passes the test for each of a plurality of distances between the first pattern and the second pattern, and finding a yield of the device pattern based on a product of the probability and a yield value for the first pattern.

Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.

Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.

Abstract: The width values of transferred patterns of respective evaluation patterns transferred using a test photo mask (11) are calculated by first calculation unit (12) based on the relationship with the opening ratio of flare generation patterns. The distribution of the calculated width values of the respective transferred patterns is linearly approximated by second calculation unit (13) and the inclination thereof is calculated. On the basis of a table defining the inclination of the width values of the respective transferred patterns (the ratio of dimension fluctuation), the amount of correction is changed for each pattern by correction unit (14). Consequently, the amount of dimension fluctuation caused by local flares can be accurately calculated. This enables accurately performing pattern-dimension corrections against local flares.

Abstract: A semiconductor device yield calculation method and a computer program that include selecting from a designed device pattern a specified first pattern and a second pattern that differs from the first pattern, finding a probability that the second pattern passes a test when the first pattern passes the test for each of a plurality of distances between the first pattern and the second pattern, and finding a yield of the device pattern based on a product of the probability and a yield value for the first pattern.

Abstract: It is an object of the present invention to provide a manufacturing method of a photomask and a manufacturing method of a semiconductor apparatus using the photomask that optimize a sub resolution assist feature on the photomask so as to ensure the depth of focusing for a formed image of a pattern for circuit formation on the photomask, preferably to the miniaturization of a pattern of the semiconductor apparatus.

Abstract: A pattern size correcting device includes: a testing photomask (1) having a test pattern; a quantifying unit (2) that quantifies, using the testing photomask (1), size variation in the test pattern as a function of distance and in relation to an open area ratio; an open area ratio calculating unit (3) that divides an exposure area having a plurality of actual device patterns into a plurality of correction areas and calculates the open area ratio of the respective correction areas; a data correcting unit (4) that inputs the open area ratio calculated by the open area ratio calculating unit (3) into a result of the quantification that uses the photomask (1), calculates size variations of the actual device patterns in the respective correction areas, and corrects design data of the actual device patterns based on the calculation; and a proximity effect correcting unit correcting a proximity effect.

Abstract: A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nth layer from the resist layer among the plural layers, there is provided, for each of the substances in the nth layer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nth layer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nth layer; and a scatter distribution in which the charged particles are scattered within the nth layer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.

Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every -single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.

Abstract: The width values of transferred patterns of respective evaluation patterns transferred using a test photo mask (11) are calculated by first calculation unit (12) based on the relationship with the opening ratio of flare generation patterns. The distribution of the calculated width values of the respective transferred patterns is linearly approximated by second calculation unit (13) and the inclination thereof is calculated. On the basis of a table defining the inclination of the width values of the respective transferred patterns (the ratio of dimension fluctuation), the amount of correction is changed for each pattern by correction unit (14). Consequently, the amount of dimension fluctuation caused by local flares can be accurately calculated. This enables accurately performing pattern-dimension corrections against local flares.

Abstract: A pattern size correcting device includes: a testing photomask (1) having a test pattern; a quantifying unit (2) that quantifies, using the testing photomask (1), size variation in the test pattern as a function of distance and in relation to an open area ratio; an open area ratio calculating unit (3) that divides an exposure area having a plurality of actual device patterns into a plurality of correction areas and calculates the open area ratio of the respective correction areas; a data correcting unit (4) that inputs the open area ratio calculated by the open area ratio calculating unit (3) into a result of the quantification that uses the photomask (1), calculates size variations of the actual device patterns in the respective correction areas, and corrects design data of the actual device patterns based on the calculation; and a proximity effect correcting unit correcting a proximity effect.

Abstract: Light intensities at light intensity calculation points on the photomask are found approximately based on distances from barycenters of opening patterns, and areas and transmission factors of the opening patterns. Thereafter, the result is added to a distribution of light intensity which is obtained by the conventional simulation without consideration given to the influence of the local flare. According to such a method, it is possible to easily carry out the simulation of the light intensity with high accuracy.

Abstract: A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nth layer from the resist layer among the plural layers, there is provided, for each of the substances in the nth layer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nth layer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nth layer; and a scatter distribution in which the charged particles are scattered within the nth layer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.

Abstract: Light intensities at light intensity calculation points on the photomask are found approximately based on distances from barycenters of opening patterns, and areas and transmission factors of the opening patterns. Thereafter, the result is added to a distribution of light intensity which is obtained by the conventional simulation without consideration given to the influence of the local flare. According to such a method, it is possible to easily carry out the simulation of the light intensity with high accuracy.

Abstract: (S12) A reference forward scattering intensity &egr;p is determined as equal to such a slice level that by adjusting the width of a pattern having the minimum width included in a block pattern repeatedly used and collectively exposed, the slice level that is in the range of 30 to 70% of the peak value of a forward scattering intensity distribution of the pattern becomes equal to the design width of the pattern. (S15) in each pattern in the block pattern a pattern width is adjusted such that the width of a forward scattering intensity distribution at &egr;p becomes equal to the design width of the pattern. Further, a collected exposure dose Qcp is determined such that Qcp(&egr;p+&agr;p′&eegr;)=Eth holds, where Eth is a threshold value for pattern developing, q is a backscattering coefficient and &agr;p′ is an effective pattern area density.

Abstract: (S12) A reference forward scattering intensity &egr;p is determined as equal to such a slice level that by adjusting the width of a pattern having the minimum width included in a block pattern repeatedly used and collectively exposed, the slice level that is in the range of 30 to 70% of the peak value of a forward scattering intensity distribution of the pattern becomes equal to the design width of the pattern. (S15) in each pattern in the block pattern a pattern width is adjusted such that the width of a forward scattering intensity distribution at &egr;p becomes equal to the design width of the pattern. Further, a collected exposure dose Qcp is determined such that Qcp(&egr;p+&agr;p′&eegr;)=Eth holds, where Eth is a threshold value for pattern developing, &eegr; is a backscattering coefficient and &agr;p′ is an effective pattern area density.