Patents by Inventor Morio Hosoya
Morio Hosoya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9229315Abstract: Provided are a reflective mask blank and a reflective mask which are capable of improving the contrast for inspection light having a wavelength of 200 nm or less in an inspection, capable of improving the contrast for exposure light in use of the mask, and capable of forming a high-resolution fine pattern. A reflective mask blank 10 includes a substrate 1, and a multilayer reflective film 2 adapted to reflect exposure light, a protective film 6 composed mainly of ruthenium (Ru) or its compound on the multilayer reflective film 2, and an absorber film 4 adapted to absorb the exposure light, which are formed in this order on the substrate. The absorber film 4 has a laminated structure including an uppermost layer 4b and a lower layer 4a. The uppermost layer 4b is formed of a material composed mainly of a nitride, an oxide, an oxynitride, a carbide, a carbonitride, or an oxycarbonitride of at least one or more elements selected from Si and Cr.Type: GrantFiled: August 29, 2013Date of Patent: January 5, 2016Assignee: HOYA CORPORATIONInventor: Morio Hosoya
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Patent number: 9075314Abstract: A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.Type: GrantFiled: July 17, 2013Date of Patent: July 7, 2015Assignee: HOYA CORPORATIONInventors: Hiroyuki Iwashita, Hiroaki Shishido, Atsushi Kominato, Masahiro Hashimoto, Morio Hosoya
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Patent number: 8709685Abstract: A reflective mask blank and a reflective mask that can improve the contrast for EUV exposure light in use of the mask and further can improve the pattern resolution at a pattern edge portion of the mask, thereby enabling high-resolution pattern transfer. The reflective mask blank has a substrate and, further, a multilayer reflective film adapted to reflect the EUV exposure light and an absorber film adapted to absorb the EUV exposure light, which are formed in this order over the substrate. The absorber film is made of a material containing Ta and has a film density of 6.0 to 16.0 g/cm3. A reflective mask is obtained by forming a transfer pattern in the absorber film of the reflective mask blank.Type: GrantFiled: November 13, 2012Date of Patent: April 29, 2014Assignee: Hoya CorporationInventor: Morio Hosoya
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Publication number: 20140057199Abstract: A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.Type: ApplicationFiled: July 17, 2013Publication date: February 27, 2014Applicant: HOYA CORPORATIONInventors: Hiroyuki IWASHITA, Hiroaki Shishido, Atsushi Kominato, Masahiro Hashimoto, Morio Hosoya
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Publication number: 20140011122Abstract: Provided are a reflective mask blank and a reflective mask which are capable of improving the contrast for inspection light having a wavelength of 200 nm or less in an inspection, capable of improving the contrast for exposure light in use of the mask, and capable of forming a high-resolution fine pattern. A reflective mask blank 10 includes a substrate 1, and a multilayer reflective film 2 adapted to reflect exposure light, a protective film 6 composed mainly of ruthenium (Ru) or its compound on the multilayer reflective film 2, and an absorber film 4 adapted to absorb the exposure light, which are formed in this order on the substrate. The absorber film 4 has a laminated structure including an uppermost layer 4b and a lower layer 4a. The uppermost layer 4b is formed of a material composed mainly of a nitride, an oxide, an oxynitride, a carbide, a carbonitride, or an oxycarbonitride of at least one or more elements selected from Si and Cr.Type: ApplicationFiled: August 29, 2013Publication date: January 9, 2014Applicant: HOYA CORPORATIONInventor: Morio Hosoya
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Patent number: 8546047Abstract: Provided are a reflective mask blank and a reflective mask which are capable of improving the contrast for inspection light having a wavelength of 200 nm or less in an inspection, capable of improving the contrast for exposure light in use of the mask, and capable of forming a high-resolution fine pattern. A reflective mask blank 10 includes a substrate 1, and a multilayer reflective film 2 adapted to reflect exposure light, a protective film 6 composed mainly of ruthenium (Ru) or its compound on the multilayer reflective film 2, and an absorber film 4 adapted to absorb the exposure light, which are formed in this order on the substrate. The absorber film 4 has a laminated structure including an uppermost layer 4b and a lower layer 4a. The uppermost layer 4b is formed of a material composed mainly of a nitride, an oxide, an oxynitride, a carbide, a carbonitride, or an oxycarbonitride of at least one or more elements selected from Si and Cr.Type: GrantFiled: December 24, 2009Date of Patent: October 1, 2013Assignee: Hoya CorporationInventor: Morio Hosoya
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Patent number: 8512916Abstract: A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.Type: GrantFiled: March 31, 2009Date of Patent: August 20, 2013Assignee: Hoya CorporationInventors: Hiroyuki Iwashita, Hiroaki Shishido, Atsushi Kominato, Masahiro Hashimoto, Morio Hosoya
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Patent number: 8389184Abstract: Disclosed is a reflective mask blank (10) which comprises a substrate (1), a multilayer reflective film (2) for reflecting exposure light, a buffer film (3), and an absorber film (4) for absorbing exposure light, said films being sequentially formed on the substrate. The absorber film (4) has a multilayer structure which is composed of an uppermost layer (4b) and a lower layer (4a). The uppermost layer is formed from a material containing oxide, oxynitride or carbide of Ta, and has a refractive index (n) of 0.95-0.97 and an extinction coefficient (k) of from ?0.033 to ?0.023. The lower layer is formed from a material containing Ta, and has a refractive index (n) of 0.94-0.97 and an extinction coefficient (k) of from ?0.050 to ?0.036. A reflective mask (20) can be obtained by forming a transfer pattern on the absorber film of the reflective mask blank.Type: GrantFiled: January 29, 2010Date of Patent: March 5, 2013Assignee: Hoya CorporationInventor: Morio Hosoya
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Patent number: 8329361Abstract: Provided are a reflective mask blank and a reflective mask that can improve the contrast for EUV exposure light in use of the mask and further can improve the pattern resolution at a pattern edge portion of the mask, thereby enabling high-resolution pattern transfer. A reflective mask blank of this invention has a substrate and, further, a multilayer reflective film adapted to reflect the EUV exposure light and an absorber film adapted to absorb the EUV exposure light, which are formed in this order over the substrate. The absorber film is made of a material containing Ta and has a film density of 6.0 to 16.0 g/cm3. A reflective mask is obtained by forming a transfer pattern in the absorber film of the reflective mask blank.Type: GrantFiled: April 15, 2010Date of Patent: December 11, 2012Assignee: Hoya CorporationInventor: Morio Hosoya
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Patent number: 8081384Abstract: A multilayer reflective film coated substrate includes a multilayer under film comprised of Mo/Si alternately-layered films, an intermediate layer in the form of a Si film, and a multilayer reflective film comprised of Mo/Si alternately-layered films for reflecting exposure light. The multilayer under film, the intermediate layer, and the multilayer reflective film are formed on a substrate in this order. Given that a cycle length of the multilayer under film is d bottom (unit:nm), a thickness of the intermediate layer is d Si (unit:nm), and a cycle length of the multilayer reflective film is d top (unit:nm), relationships of a formula (1) and a formula (2) are satisfied, the formula (1) given by n×d top?0.05?d bottom?n×d top+0.05 where n is a natural number equal to or greater than 1, and the formula (2) given by m×d top?1.2?d Si??m×d top+1.2 where m is an integer equal to or greater than 0.Type: GrantFiled: October 16, 2006Date of Patent: December 20, 2011Assignee: Hoya CorporationInventors: Morio Hosoya, Takeyuki Yamada, Akira Ikeda
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Publication number: 20110305978Abstract: The present invention provides a photomask blank for producing a photomask to which an ArF excimer laser light is applied, wherein: a thin film having a multilayer structure is provided on a light transmissive substrate; and the uppermost layer of the thin film has an amorphous structure made of a material comprising chromium and at least one of nitrogen, oxygen and carbon.Type: ApplicationFiled: March 31, 2009Publication date: December 15, 2011Applicant: HOYA CORPORATIONInventors: Hiroyuki Iwashita, Hiroaki Shishido, Atsushi Kominato, Masahiro Hashimoto, Morio Hosoya
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Publication number: 20110281207Abstract: Disclosed is a reflective mask blank (10) which comprises a substrate (1), a multilayer reflective film (2) for reflecting exposure light, a buffer film (3), and an absorber film (4) for absorbing exposure light, said films being sequentially formed on the substrate. The absorber film (4) has a multilayer structure which is composed of an uppermost layer (4b) and a lower layer (4a). The uppermost layer is formed from a material containing oxide, oxynitride or carbide of Ta, and has a refractive index (n) of 0.95-0.97 and an extinction coefficient (k) of from ?0.033 to ?0.023. The lower layer is formed from a material containing Ta, and has a refractive index (n) of 0.94-0.97 and an extinction coefficient (k) of from ?0.050 to ?0.036. A reflective mask (20) can be obtained by forming a transfer pattern on the absorber film of the reflective mask blank.Type: ApplicationFiled: January 29, 2010Publication date: November 17, 2011Applicant: HOYA CORPORATIONInventor: Morio Hosoya
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Patent number: 8021807Abstract: A reflective mask blank has a substrate, a multilayer reflective film formed on the substrate to reflect exposure light, a protective film formed on the multilayer reflective film, and an absorber film formed on the protective film to absorb the exposure light. The protective film is made of an Ru compound containing Ru and X (X being at least one kind of material selected from Nb and Zr). The protective film has an oxidized surface layer containing X as a main component. A reflective mask is obtained by forming a transfer pattern by patterning the absorber film of the reflective mask blank.Type: GrantFiled: October 5, 2009Date of Patent: September 20, 2011Assignee: Hoya CorporationInventor: Morio Hosoya
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Publication number: 20110217633Abstract: Provided are a reflective mask blank and a reflective mask which are capable of improving the contrast for inspection light having a wavelength of 200 nm or less in an inspection, capable of improving the contrast for exposure light in use of the mask, and capable of forming a high-resolution fine pattern. A reflective mask blank 10 includes a substrate 1, and a multilayer reflective film 2 adapted to reflect exposure light, a protective film 6 composed mainly of ruthenium (Ru) or its compound on the multilayer reflective film 2, and an absorber film 4 adapted to absorb the exposure light, which are formed in this order on the substrate. The absorber film 4 has a laminated structure including an uppermost layer 4b and a lower layer 4a. The uppermost layer 4b is formed of a material composed mainly of a nitride, an oxide, an oxynitride, a carbide, a carbonitride, or an oxycarbonitride of at least one or more elements selected from Si and Cr.Type: ApplicationFiled: December 24, 2009Publication date: September 8, 2011Applicant: HOYA CORPORATIONInventor: Morio Hosoya
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Patent number: 7981573Abstract: A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed.Type: GrantFiled: May 7, 2008Date of Patent: July 19, 2011Assignee: Hoya CorporationInventors: Shinichi Ishibashi, Tsutomu Shoki, Morio Hosoya, Yuki Shiota, Mitsuhiro Kureishi
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Publication number: 20100266938Abstract: Provided are a reflective mask blank and a reflective mask that can improve the contrast for EUV exposure light in use of the mask and further can improve the pattern resolution at a pattern edge portion of the mask, thereby enabling high-resolution pattern transfer. A reflective mask blank of this invention has a substrate and, further, a multilayer reflective film adapted to reflect the EUV exposure light and an absorber film adapted to absorb the EUV exposure light, which are formed in this order over the substrate. The absorber film is made of a material containing Ta and has a film density of 6.0 to 16.0 g/cm3. A reflective mask is obtained by forming a transfer pattern in the absorber film of the reflective mask blank.Type: ApplicationFiled: April 15, 2010Publication date: October 21, 2010Applicant: HOYA CORPORATIONInventor: Morio HOSOYA
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Patent number: 7804648Abstract: A multilayer reflective film coated substrate includes a multilayer under film comprised of Mo/Si alternately-layered films and a multilayer reflective film comprised of Mo/Si alternately-layered films for reflecting exposure light. The multilayer under film and the multilayer reflective film are formed on a substrate in this order. Given that a cycle length of the multilayer under film is d bottom (unit:nm) and a cycle length of the multilayer reflective film is d top (unit:nm), a relationship of a formula (1) is satisfied when d bottom>d top, the formula (1) given by (n+0.15)×d top?d bottom?(n+0.9)×d top where n is a natural number equal to or greater than 1.Type: GrantFiled: October 16, 2006Date of Patent: September 28, 2010Assignee: Hoya CorporationInventors: Morio Hosoya, Takeyuki Yamada, Akira Ikeda
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Publication number: 20100136464Abstract: A reflective mask blank has a substrate, a multilayer reflective film formed on the substrate to reflect exposure light, a protective film formed on the multilayer reflective film, and an absorber film formed on the protective film to absorb the exposure light. The protective film is made of an Ru compound containing Ru and X (X being at least one kind of material selected from Nb and Zr). The protective film has an oxidized surface layer containing X as a main component. A reflective mask is obtained by forming a transfer pattern by patterning the absorber film of the reflective mask blank.Type: ApplicationFiled: October 5, 2009Publication date: June 3, 2010Applicant: HOYA CORPORATIONInventor: Morio HOSOYA
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Patent number: 7700245Abstract: A reflective mask blank and a reflective mask each have, on a multilayer reflective film, a protective film that protects the multilayer reflective film from etching during pattern formation of an absorber layer or a buffer layer formed on the protective film. The protective film is formed by a ruthenium compound containing ruthenium (Ru) and at least one selected from the group consisting of molybdenum (Mo), niobium (Nb), zirconium (Zr), yttrium (Y), boron (B), titanium (Ti), and lanthanum (La). A reflection enhancement film of Ru may be further formed on the surface of the protective film.Type: GrantFiled: May 3, 2006Date of Patent: April 20, 2010Assignee: Hoya CorporationInventors: Morio Hosoya, Tsutomu Shoki
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Publication number: 20100084375Abstract: A method of producing a reflective mask is carried out by the use of a reflective mask blank which has a substrate, a multilayer reflective film formed on the substrate to reflect exposure light, a protective film formed on the multilayer reflective film, a buffer film formed on the protective film, and an absorber film formed on the buffer film to absorb the exposure light. The protective film is made of a ruthenium compound containing Ru and Nb. The method includes a step of patterning the buffer film by dry etching performed by the use of an etching gas containing oxygen.Type: ApplicationFiled: October 5, 2009Publication date: April 8, 2010Applicant: HOYA CORPORATIONInventor: Morio HOSOYA