Patents by Inventor Morio Shiozaki

Morio Shiozaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5565272
    Abstract: A grain oriented silicon steel sheet having excellent primary glass film property and magnetic property, comprising 2.0 to 5.0% by weight of Si, wherein a primary glass film formed during secondary recrystallization annealing is composed mainly of forsterite (Mg.sub.2 SiO.sub.4) and an oxide containing Al, mainly of spinel (MgAl.sub.2 O.sub.4), or Al and Si, mainly of cordierite (MgO.sub.2 Al.sub.4 Si.sub.5 O.sub.18) and/or sapphirine (Mg.sub.4 Al.sub.10 Si.sub.2 O.sub.23), and in an analysis of the surface of the steel sheet by glow discharge optical emission spectrometry analysis (GDS analysis), a peak derived from Al is separated from a peak derived from Mg, and, preferably, the peak derived from Al is separated from the peak derived from Mg and the distance (time) from the surface of the steel sheet at which the peak derived from Al is 1.2 times or more the distance from the surface of the steel sheet at which the peak derived from Mg appears.
    Type: Grant
    Filed: July 10, 1992
    Date of Patent: October 15, 1996
    Assignee: Nippon Steel Corporation
    Inventors: Hiroaki Masui, Morio Shiozaki, Nobuyuki Takahashi, Hisashi Kabayashi, Takeo Nagashima, Shuichi Yamazaki, Hiroyasu Fujii
  • Patent number: 5094920
    Abstract: An inner shielding material and a method of manufacturing the same, wherein the material comprises a steel sheet 0.10 to 0.25 mm thick of a composition of .ltoreq.0.005% C, .ltoreq.2.0% Si, .ltoreq.0.4% P, 0.1 to 1.0% Mn, 0.01% S, .ltoreq.0.01% sol.Al, .ltoreq.0.01% N and the balance Fe and residual impurities, having a hardness H.sub.v (500 g) of 90 or greater and a grain size of 7 or less when measured by ferrite grain size; and a blackened layer on the surface of the steel sheet comprising primarily FeO formed by transformation of Fe.sub.3 O.sub.4 and having superior adhesion.
    Type: Grant
    Filed: February 27, 1990
    Date of Patent: March 10, 1992
    Assignee: Nippon Steel Corporation
    Inventors: Morio Shiozaki, Takayoshi Inokuchi, Masahiko Oda, Takahide Shimazu, Kazuo Nishiura
  • Patent number: 4280837
    Abstract: In the continuous casting of slabs for use in manufacturing grain-oriented electrical steel sheet and strip, the slag covering the molten steel for casting the slabs is adjusted in its composition to maintain the ratio of Al.sub.2 O.sub.3 to SiO.sub.2 at not less than 0.25, whereby the slabs continuously cast from the molten steel are made free from variation in Al or Al and S content in the direction of casting.
    Type: Grant
    Filed: October 31, 1979
    Date of Patent: July 28, 1981
    Assignee: Nippon Steel Corporation
    Inventors: Morio Shiozaki, Mitsuaki Kawashima, Yoshiaki Shimoyama, Nobuoki Ishihara
  • Patent number: 4204891
    Abstract: A method for preventing edge cracks in a grain oriented silicon steel sheet produced from a continuously cast slab containing 2.5 to 4.0% silicon. This method is carried out with a controlled reduction rate in a rough rolling mill and/or with an adjusted reduction by a pair of edge rolls of an edger.
    Type: Grant
    Filed: November 27, 1978
    Date of Patent: May 27, 1980
    Assignee: Nippon Steel Corporation
    Inventors: Morio Shiozaki, Masafumi Okamoto, Kiyoshi Tanaka, Takahide Shimazu
  • Patent number: 4108694
    Abstract: A continuously cast steel slab for production of a grain-oriented electrical steel sheet having excellent magnetic properties in which at least 95% of the total number of grains constituting an equi-axed crystal zone in said slab has a cross sectional dimension less than 9 mm.sup.2 per one grain.
    Type: Grant
    Filed: August 10, 1977
    Date of Patent: August 22, 1978
    Assignee: Nippon Steel Corporation
    Inventors: Morio Shiozaki, Yozo Suga, Hiromu Fujii, Kohichi Fujiwara