Abstract: The present embodiments can generally provide a magnetic write head structure with optimized gap current distribution to maximize the current-assisted areal density capacity (ADC) gain in hard-disk-drive storage devices. In a first example embodiment, a non-dual-write-shield (nDWS) write head can include a main pole (MP), a trailing shield (TS), and a write gap (WG) disposed between the MP and the TS. The write head can also include a side shield (SS), a leading shield (LS), and a write shield (WS). The write head can include a side gap (SG) between the MP and the SS on both sides of the MP tip, and a leading gap (LG) between the MP and the LS. The write head can also include a coil wrapped around the MP through a PP3 shield that is configured to direct a time-dependent write current to saturate magnetization of the MP.

Abstract: The present embodiments relate to a perpendicular magnetic recording (PMR) write head with a Two Tunable bias branch design that can electrical separate a WS1/PP3 and a SS/LS to form two tunable bias branches. A write head can include a main pole, a write gap(WG) disposed adjacent to the main pole, and a hot seed (HS) layer connected to the WG. The PMR write head can also include a trailing shield, a side shield and a leading shield. Two tunable bias branches can be formed to electrically separate the trailing shield and the side and leading shields. A first branch can include a first electrical path between the main pole and the trailing shield. The tunable bias branches can also include a second branch forming a second electrical path between the main pole and the side and leading shields.

Abstract: The present embodiments relate to a perpendicular magnetic recording (PMR) write head with a Tunable Pole Protrusion or Tunable Pole Performance (TPP) side bridge design. A PMR write head can include a main pole including a tip portion configured to be disposed at an air-bearing surface (ABS) and configured to interact with a magnetic recording medium. The PMR write head can also include a hot seed (HS) portion and a first write shield. The PMR write head can also include a first metallic side bridge disposed between the tip portion of the main pole and the HS portion. The PMR write head can also include a bias circuit including at least a first bias electrical pad and a second electrical bias pad directing an electrical current flow along an electrical path between the tip portion of the main pole and the write shield portion via the first metallic side bridge.

Abstract: The present embodiments relate to a perpendicular magnetic recording (PMR) write head with a Tunable Pole Protrusion or Tunable Pole Performance (TPP) side bridge design. A PMR write head can include a main pole including a tip portion configured to be disposed at an air-bearing surface (ABS) and configured to interact with a magnetic recording medium. The PMR write head can also include a hot seed (HS) portion and a first write shield. The PMR write head can also include a first metallic side bridge disposed between the tip portion of the main pole and the HS portion. The PMR write head can also include a bias circuit including at least a first bias electrical pad and a second electrical bias pad directing an electrical current flow along an electrical path between the tip portion of the main pole and the write shield portion via the first metallic side bridge.

Abstract: To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.

Abstract: A spin valve device comprises a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a patterned underlayer that includes a magnetic material for providing trackwidth and longitudinal bias. The patterned underlayer can comprise a buffer layer, an antiferromagnetic layer and a ferromagnetic layer. Alternatively, the patterned underlayer can comprises a buffer layer, a chromium layer and a hard biasing, permanent magnetic layer which provides trackwidth and longitudinal bias. A lower conductor can be located on the underlayer.

Abstract: A magnetoresistive read/inductive write magnetic head assembly formed on a hard electrically insulating substrate and having electrostatic discharge protection comprises: a hard electrically insulating substrate, preferably formed of sapphire or alumina-TiC; multiple alumina layers formed over the substrate; a magnetoresistive read/inductive write head positioned between the alumina layers; a silicon layer supported by the substrate; and a semiconducting circuit integrated into the silicon layer and interconnected with said magnetoresistive read/write inductive write head to provide electrostatic discharge protection to the head. The silicon layer may be epitaxially grown on the substrate when implemented as sapphire, or bonded to the substrate when implemented as alumina-TiC. The hard electrically insulating substrate and alumina layers provide the assembly with a hard air bearing surface having generally uniform lapping and etching characteristics, and excellent durability.

Abstract: A giant magneto-resistive head is provided which includes a novel high data-rate stitched pole inductive magnetic write head. The write head incorporates a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. The spacer layer shortens the throat height of the write head, reduces its saturation write current, and improves its overwrite and side erasure performance.

Abstract: To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.

Abstract: A high data-rate stitched pole inductive magnetic write head incorporating a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. The spacer layer shortens throat height, reduces saturation write current, and improves overwrite and side erasure performance.

Abstract: A high data-rate stitched pole inductive magnetic write head incorporating a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. Said spacer layer is deposited as part of a self-aligned, patterned photoresist process, wherein the spacer layer is deposited first and the P2 portion of the upper pole assembly is then plated over it to form the pole tip configuration. Increasing the thickness of the spacer layer, while keeping it within a specified tolerance range, allows the upper stitched P3 portion of the pole piece to be recessed relative to the tip of P2. The spacer layer shortens throat height, reduces saturation write current, and improves overwrite and side erasure performance.

Abstract: A spin valve device comprises a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a patterned underlayer that includes a magnetic material for providing trackwidth and longitudinal bias. The patterned underlayer can comprise a buffer layer, an antiferromagnetic layer and a ferromagnetic layer. Alternatively, the patterned underlayer can comprises a buffer layer, a chromium layer and a hard biasing, permanent magnetic layer which provides trackwidth and longitudinal bias. A lower conductor can be located on the underlayer.

Abstract: A magnetoresistive read/inductive write magnetic head assembly formed on a hard electrically insulating substrate and having electrostatic discharge protection comprises: a hard electrically insulating substrate, preferably formed of sapphire or alumina-TiC; multiple alumina layers formed over the substrate; a magnetoresistive read/inductive write head positioned between the alumina layers; a silicon layer supported by the substrate; and a semiconducting circuit integrated into the silicon layer and interconnected with said magnetoresistive read/write inductive write head to provide electrostatic discharge protection to the head. The silicon layer may be epitaxially grown on the substrate when implemented as sapphire, or bonded to the substrate when implemented as alumina-TiC. The hard electrically insulating substrate and alumina layers provide the assembly with a hard air bearing surface having generally uniform lapping and etching characteristics, and excellent durability.

Abstract: The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous selfaligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.

Abstract: The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.

Abstract: The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.

Abstract: The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.

Abstract: A magnetoresistive (MR) head having a double self-aligned contiguous junction includes an MR sensor structure with a biased guide joined thereto. The guide is formed using a first resist mask applied over the MR sensor structure. A guide biasing structure is formed using the first resist mask and a second resist mask applied over the first resist mask and the guide. The first resist mask is configured to form a double self-aligned contiguous junction between the MR sensor structure and the guide and guide bias structure. In this manner, the position of the guide biasing structure is carefully controlled so that it does not overlap the MR sensor structure.

Abstract: A magnetoresistive read/inductive write magnetic head assembly formed on a hard electrically insulating substrate and having electrostatic discharge protection comprises: a hard electrically insulating substrate, preferably formed of sapphire or alumina-TiC; multiple alumina layers formed over the substrate; a magnetoresistive read/inductive write head positioned between the alumina layers; a silicon layer supported by the substrate; and a semiconducting circuit integrated into the silicon layer and interconnected with said magnetoresistive read/write inductive write head to provide electrostatic discharge protection to the head. The silicon layer may be epitaxially grown on the substrate when implemented as sapphire, or bonded to the substrate when implemented as alumina-TiC. The hard electrically insulating substrate and alumina layers provide the assembly with a hard air bearing surface having generally uniform lapping and etching characteristics, and excellent durability.

Abstract: Sensors based on the giant magnetoresistance effect, specifically "spin valve" (SV) magnetoresistive sensors, have applications as external magnetic field sensors and as read heads in magnetic recording systems, such as rigid disk drives. These sensors have a ferromagnetic layer whose magnetization orientation is fixed or pinned by being exchange coupled to an antiferromagnetic layer. The magnetization of the pinned layer will become misaligned and the sensor will experience an abnormal response to the field being sensed, i.e., the external magnetic field or the recorded data in the magnetic media, if an adverse event elevates the antiferromagnetic layer above its blocking temperature. A pinned layer mangetization reset system is incorporated into systems that use SV sensors.