Abstract: A plasma power supply system for a plasma processing system is provided. The plasma processing system includes a first plasma source and a second plasma source in adjacent sections of a plasma chamber. The plasma processing system is configured in such a way that in different sections different materials are deposited. A substrate is processed by a plasma in the plasma chamber. The power supply system includes a first power supply configured to supply a first AC power to the first plasma source, a second power supply configured to supply a second AC power to the second plasma source, a first sensor for monitoring a plasma process parameter of the first plasma source, a control unit configured to determine a first operating data related to the plasma process parameter, and control the second power supply based on the first operating data in order to decrease crazing on the substrate.

Abstract: A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two power output ports each for connection to one of the plasma processing chambers, and a controller configured to control delivering the bipolar output power to the power output ports, using at least one control parameter. The controller is configured to obtain a full set of desired values for the control parameter for the power output ports, calculate whether the power converter is capable of delivering every desired value to every output port, and if so, calculate a sequence of pulses of power delivery to the output ports to supply the power to plasma processes in the plasma processing chambers.

Abstract: A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two power output ports each for connection to one of the plasma processing chambers, and a controller configured to control delivering the bipolar output power to the power output ports, using at least one control parameter. The controller is configured to obtain a full set of desired values for the control parameter for the power output ports, calculate whether the power converter is capable of delivering every desired value to every output port, and if so, calculate a sequence of pulses of power delivery to the output ports to supply the power to plasma processes in the plasma processing chambers.

Abstract: The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.

Abstract: The invention relates to a method for the selective plasmochemical dry-etching of phosphosilicate glass ((SiO2)xP2O5)y) formed on surfaces of silicon wafers. In this respect, it is the object of the invention to provide a cost-effective, efficient, selective possibility which at least reduces manufacturing losses and with which phosphosilicate glass can be removed from silicon wafers. A procedure is followed in the invention that crystalline silicon wafers, whose surface is provided with phosphosilicate glass, are etched in a selective plasmochemical process. In this connection, a plasma formed using a plasma source and an etching gas are directed at atmospheric pressure to the phosphosilicate glass which can thus be removed.

Abstract: A continuous vacuum system for processing substrates has an inlet air lock, an outlet air lock, at least one process chamber, and a device for conveying the substrates through the continuous system. To create a continuous system having a compact design and high throughput for plasma-enhanced treatment of substrates at a reduced pressure, which ensures a simple, rapid and secure handling of the substrates with a high capacity of the substrate carrier, the conveying device has at least one plasma boat in which the substrates are arranged on a base plate in a three-dimensional stack in at least one plane at a predefined distance from one another with intermediate carriers in between. At least the intermediate carriers are made of graphite or another suitable electrically conductive material and can be acted upon electrically with an alternating voltage via an electric connection.

Abstract: The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.

Abstract: A plasma reactor is configured for rapid, simple and selective cleaning of plasma sources and adjacent areas of the processing chamber. The plasma reactor includes a processing chamber having a plurality of plasma zones, each associated with its own plasma source and/or a remote or downstream plasma source. The plasma reactor is configured so that substrates can be transported past the individual plasma sources in a processing mode in which the substrates are exposed to processing gasses chemically activated by the plasmas of the individual plasma sources. The plasma sources or zones can be selectively isolated or shielded from the substrates.

Abstract: An electronic device, particularly a solar cell, comprising a layer (16) of amorphous silicon (a-Si) and at least two layered electrodes (14, 18) each having an interface (20, 22) bordering said a-Si layer, in which at least one of the electrodes (14) is provided with pattern elements (14a) forming a preferably periodic micropattern. The average spacing of the pattern elements is preferably in the order of magnitude of the charge carrier drift lengths and is generally smaller than 1 .mu.m, particularly 50 to 500 nm. The micropattern is produced preferably by the effect of a laser beam interference pattern.