Abstract: An embodiment of the invention relates to a sensor comprising a sensor element (10) for measuring a magnetic field, the sensor element (10) comprising a set of at least two first input ports (I1), a set of at least two exit ports (E) each of which is connected to one of the first input ports (I1) via a corresponding first beam path (B1), a set of at least two second input ports (I2) each of which is connected to a second beam path (B2), wherein the first beam paths (B1) extend through a common plane (CP) located inside the sensor element (10), said plane (CP) comprising a plurality of magneto-optically responsive defect centers, wherein the second beam paths (B2) also extend through said common plane (CP), but are angled with respect to the first beam paths (B1) such that a plurality of intersections between the first and second beam paths (B2) is defined, and wherein each intersection forms a sensor pixel (P) located at at least one of said magneto-optically responsive defect centers.

Abstract: Provided is a method for manufacturing an optical component, including the following steps: producing at least one optical waveguide or a part of an optical waveguide on a substrate, where producing the optical waveguide or the part of the optical waveguide includes producing a waveguide core or a portion of a waveguide core, and where the waveguide core or the portion of the waveguide core includes silicon nitride, a polymer or a III-V semiconductor material; and arranging at least one layer of lithium niobate on a side of the waveguide core or of the portion of the waveguide core facing away from the substrate. After arranging at least one layer of lithium niobate at least one of the following steps is carried out: structuring at least one layer of lithium niobate, producing a further portion of the waveguide core and/or arranging at least one contact structure for electrically contacting the at least one layer of lithium niobate.

Abstract: An embodiment of the invention relates to a sensor comprising a sensor element (10) for measuring a magnetic field, the sensor element (10) comprising a set of at least two first input ports (I1), a set of at least two exit ports (E) each of which is connected to one of the first input ports (I1) via a corresponding first beam path (B1), a set of at least two second input ports (I2) each of which is connected to a second beam path (B2), wherein the first beam paths (B1) extend through a common plane (CP) located inside the sensor element (10), said plane (CP) comprising a plurality of magneto-optically responsive defect centers, wherein the second beam paths (B2) also extend through said common plane (CP), but are angled with respect to the first beam paths (B1) such that a plurality of intersections between the first and second beam paths (B2) is defined, and wherein each intersection forms a sensor pixel (P) located at at least one of said magneto-optically responsive defect centers.

Abstract: An optoelectronic component includes an optical waveguide including at least one passive and at least one active section. The active section has at least one layer formed from a two-dimensional material. The layer composed of the two-dimensional material is arranged at least partly in a waveguide core of the active section or in a manner at least partly adjoining the waveguide core of the active section. The difference in refractive index relative to the same wavelength between a core material forming the waveguide core of the active section and a cladding material forming a waveguide cladding of the active section is greater than the difference in refractive index between a core material forming a waveguide core of the passive section and a cladding material forming a waveguide cladding of the passive section.

Abstract: An optoelectronic component includes an optical waveguide including at least one passive and at least one active section. The active section has at least one layer formed from a two-dimensional material. The layer composed of the two-dimensional material is arranged at least partly in a waveguide core of the active section or in a manner at least partly adjoining the waveguide core of the active section. The difference in refractive index relative to the same wavelength between a core material forming the waveguide core of the active section and a cladding material forming a waveguide cladding of the active section is greater than the difference in refractive index between a core material forming a waveguide core of the passive section and a cladding material forming a waveguide cladding of the passive section.

Abstract: It is provided a circuit assembly, comprising at least one electronic circuit; at least one optical waveguide, wherein the core and the cladding of the optical waveguide are formed of an amorphous material; at least one carrier on which the optical waveguide is arranged; and at least one electro-optically active material layer electrically connected to the electronic circuit. The at least one electro-optically active material layer at least partially extends in the optical waveguide and the electrical connection between the electronic circuit and the at least one electro-optically active material layer is produced in that at least one electrical contact extends from the electronic circuit through at least one section of the cladding of the optical waveguide to the at least one electro-optically active material layer or is connected to a section of the electro-optically active material layer, which protrudes from the cladding of the optical waveguide.

Abstract: It is provided a circuit assembly, comprising at least one electronic circuit; at least one optical waveguide, wherein the core and the cladding of the optical waveguide are formed of an amorphous material; at least one carrier on which the optical waveguide is arranged; and at least one electro-optically active material layer electrically connected to the electronic circuit. The at least one electro-optically active material layer at least partially extends in the optical waveguide and the electrical connection between the electronic circuit and the at least one electro-optically active material layer is produced in that at least one electrical contact extends from the electronic circuit through at least one section of the cladding of the optical waveguide to the at least one electro-optically active material layer or is connected to a section of the electro-optically active material layer, which protrudes from the cladding of the optical waveguide.

Abstract: An optoelectronic oscillator for generating an optical and/or electric pulse comb, comprising a monolithically integrated passively mode-coupled semiconductor laser and an optical feedback loop which guides a part of the optical radiation of the semiconductor laser and feeds said part back into the semiconductor laser as feedback pulses. Without the influence of the feedback pulses, the semiconductor laser would emit comb-like optical pulses, hereafter referred to as primary pulses, and in the event of an influence, emits comb-like output pulses which have been influenced by the feedback pulses, said output pulses having a lower temporal jitter or less phase noise than the primary pulses. The feedback loop is damped between 27.5 and 37.5 dB, and the time lag of the feedback loop is selected such that each feedback pulse is incident within the temporal half-value width of each subsequent primary pulse.

Abstract: An optoelectronic oscillator for generating an optical and/or electric pulse comb, comprising a monolithically integrated passively mode-coupled semiconductor laser and an optical feedback loop which guides a part of the optical radiation of the semiconductor laser and feeds said part back into the semiconductor laser as feedback pulses. Without the influence of the feedback pulses, the semiconductor laser would emit comb-like optical pulses, hereafter referred to as primary pulses, and in the event of an influence, emits comb-like output pulses which have been influenced by the feedback pulses, said output pulses having a lower temporal jitter or less phase noise than the primary pulses. The feedback loop is damped between 27.5 and 37.5 dB, and the time lag of the feedback loop is selected such that each feedback pulse is incident within the temporal half-value width of each subsequent primary pulse.