Abstract: To realize a sintered compact containing LiCoO2 which can increase a film deposition rate during sputtering, particularly even when a film is deposited only by pulsed DC discharge sputtering and can suppress the generation of flakes due to sputtering, and which is hardly cracked and is easy to handle. In the sintered compact containing LiCoO2, an average grain size is 10 to 40 ?m, a relative density is 90% or more, and a resistivity is 100 ?·cm or less.

Abstract: An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and the average grain size of crystal grains observed on the surface of the oxide sintered body is less than 10 ?m. X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are the main phases and that an InGaZn2O5 phase is contained in an amount of 3 volume % or less.

Abstract: Provided is a sintered body comprising LiCoO2 used for a sputtering target. The area A of a surface of the sintered body that corresponds to a sputtering surface is 200-1500 cm2 and the relative density of the entire sintered body is 75% or higher. When B1 represents the area of a region in which the area ratio that is occupied by pores is 10% or higher in the surface that corresponds to a sputtering surface, the ratio of B1 to the area A is 50% or higher, and the area B2 of a region having a specific resistance of 1.0×102 ?-cm or smaller in the surface that corresponds to a sputtering surface occupies 25% or more of the area A.

Abstract: An oxide sintered body is obtained by mixing and sintering a zinc oxide, an indium oxide, a gallium oxide and a tin oxide. The oxide sintered body has a relative density of 85% or more, and has volume ratios satisfying the following expressions (1) to (3), respectively, as determined by X•ray diffractometry: (1) (Zn2SnO4 phase+InGaZnO4 phase)/(Zn2SnO4 phase+InGaZnO4 phase+In2O3 phase+SnO2 phase+(ZnO)mIn2O3, phase)?75% by volume; (2) Zn2SnO4 phase/(Zn2SnO4 phase+InGaZnO4 phase+In2O3 phase+SnO2 phase+(ZnO)mIn2O3 phase)?30% by volume; and (3) InGaZnO4 phase/(Zn2SnO4 phase+InGaZnO4 phase+In2O3 phase+SnO2 phase+(ZnO)mIn2O3 phase)?10% by volume, and m represents an integer of 2 to 5.

Abstract: Provided is a Li-containing phosphoric-acid compound sintered body of both high relative density and very small crystal grain diameter with reduced incidence of defects (voids) such as air holes, the Li-containing phosphoric-acid compound sintered body causing a Li-containing phosphoric-acid compound thin film useful as a solid electrolyte for a secondary cell or the like to be stabilized without any incidence of target cracking or irregular electrical discharge, and offering high-speed film-forming capability. This Li-containing phosphoric-acid compound sintered body contains no defects measuring 50 ?m or larger within a 1 mm2 cross-sectional region in the interior thereof, while having an average crystal grain diameter of no more than 15 ?m and a relative density of at least 85%.

Abstract: Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a bonding material. The Li-containing oxide target assembly does not undergo warping or cracking during the bonding. The Li-containing oxide target assembly according to the present invention is manufactured by bonding a Li-containing oxide sputtering target to a backing plate via a bonding material, and has bending strength of 20 MPa or larger.

Abstract: Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a bonding material. The Li-containing oxide target assembly does not undergo warping or cracking during the bonding. The Li-containing oxide target assembly according to the present invention is manufactured by bonding a Li-containing oxide sputtering target to a backing plate via a bonding material, and has bending strength of 20 MPa or larger.

Abstract: Provided is a sintered body comprising LiCoO2 used for a sputtering target. The area A of a surface of the sintered body that corresponds to a sputtering surface is 200-1500 cm2 and the relative density of the entire sintered body is 75% or higher. When B1 represents the area of a region in which the area ratio that is occupied by pores is 10% or higher in the surface that corresponds to a sputtering surface, the ratio of B1 to the area A is 50% or higher, and the area B2 of a region having a specific resistance of 1.0×102 ?-cm or smaller in the surface that corresponds to a sputtering surface occupies 25% or more of the area A.

Abstract: Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100?70. In equation (1), A represents the XRD peak intensity in the vicinity of 2?=34°, B represents the XRD peak intensity in the vicinity of 2?=31°, C represents the XRD peak intensity in the vicinity of 2?=35°, and D represents the XRD peak intensity in the vicinity of 2?=26.5°.

Abstract: An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and the average grain size of crystal grains observed on the surface of the oxide sintered body is less than 10 ?m. X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are the main phases and that an InGaZn2O5 phase is contained in an amount of 3 volume % or less.

Abstract: An oxide sintered body is obtained by mixing and sintering a zinc oxide, an indium oxide, a gallium oxide and a tin oxide. The oxide sintered body has a relative density of 85% or more, and has volume ratios satisfying the following expressions (1) to (3), respectively, as determined by X•ray diffractometry: (1) (Zn2SnO4 phase+InGaZnO4 phase)/(Zn2SnO4 phase+InGaZnO4 phase+In2O3 phase+SnO2 phase+(ZnO)mIn2O3, phase)?75% by volume; (2) Zn2SnO4 phase/(Zn2SnO4 phase+InGaZnO4 phase+In2O3 phase+SnO2 phase+(ZnO)mIn2O3 phase)?30% by volume; and (3) InGaZnO4 phase/(Zn2SnO4 phase+InGaZnO4 phase+In7O3 phase+SnO2 phase+(ZnO)mIn2O3 phase)?10% by volume. and m represents an integer of 2 to 5.

Abstract: Provided is an oxide sintered body suitably used for the production of an oxide semiconductor film for a display device, wherein the oxide sintered body has both high conductivity and relative density, and is capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide, and when an EPMA in-plane compositional mapping is performed on the oxide sintered body the percentage of the area in which Sn concentration is 10 to 50 mass % in the measurement area is 70 area percent or more.

Abstract: Provided is a Li-containing phosphoric-acid compound sintered body of both high relative density and very small crystal grain diameter with reduced incidence of defects (voids) such as air holes, the Li-containing phosphoric-acid compound sintered body causing a Li-containing phosphoric-acid compound thin film useful as a solid electrolyte for a secondary cell or the like to be stabilized without any incidence of target cracking or irregular electrical discharge, and offering high-speed film-forming capability. This Li-containing phosphoric-acid compound sintered body contains no defects measuring 50 ?m or larger within a 1 mm2 cross-sectional region in the interior thereof, while having an average crystal grain diameter of no more than 15 ?m and a relative density of at least 85%.

Abstract: The Li-containing transition metal oxide sintered compact of the present invention includes Li and a transition metal, and further includes Al, Si, Zr, Ca, and Y as impurity elements, of which contents are controlled to the following ranges: Al?90 ppm; Si?100 ppm; Zr?100 ppm; Ca?80 ppm; and Y?20 ppm, wherein the sintered compact has a relative density of 95% or higher and a specific resistance of lower than 2×107 ?cm. The present invention makes it possible to stably form Li-containing transition metal oxide thin films useful as the positive electrode thin films of secondary batteries or the like at a high deposition rate without causing abnormal discharge.

Abstract: Provided is an oxide sintered body suitably used for the production of an oxide semiconductor film for a display device, wherein the oxide sintered body has both high conductivity and relative density, and is capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide, and when an EPMA in-plane compositional mapping is performed on the oxide sintered body the percentage of the area in which Sn concentration is 10 to 50 mass % in the measurement area is 70 area percent or more.

Abstract: Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100?70. In equation (1), A represents the XRD peak intensity in the vicinity of 2?=34°, B represents the XRD peak intensity in the vicinity of 2?=31°, C represents the XRD peak intensity in the vicinity of 2?=35°, and D represents the XRD peak intensity in the vicinity of 2?=26.5°.

Abstract: A method of producing a disk having a radius of r and a thickness of 2h from an oxynitride glass by pressing, said method being characterized in that the pressing load (F), the pressing temperature (T), and the pressing time (t) are defined by the expression below. 1900 ≥ T ≥ 100 × log 10 ⁡ ( 0.

Abstract: An artificial joint made from a zirconia-alumina composite ceramic and having the capability of providing a good joint motion for a long time period with a high degree of reliability is provided. This artificial joint is composed of a first bone member and a second bone member, which is slidably engaged to a part of the first bone member to form a joint portion. At least one of the first and second bone members is made from the zirconia-alumina composite ceramic comprising a matrix phase of zirconia grains and a second phase of alumina grains dispersed in the matrix phase. The zirconia grains contains ceria as a stabilizer in such an amount that the matrix phase is largely composed of tetragonal zirconia. In addition, this composite ceramic has an average grain size of 0.1 to 1 &mgr;m, preferably 0.1 to 0.8 &mgr;m, and particularly preferably 0.1 to 0.65 &mgr;m.

Abstract: The present invention provides a gas generating agent for an air bag including a fuel component of nitrogenous organic compound and an oxidizing agent as its major components, to which at least one metal nitride or metal carbide that is allowed to react with a metallic component contained in the fuel component or the oxidizing agent to form slag is added, thus providing the effects of: solving the slag collecting problem which stands in the way of commercially practicing the nitrogenous organic compound base fuels; promoting the size reduction of the gas generator through the full use of high rate of gasification of the nitrogenous organic compound base fuels; and providing a gas generating agent molded member which is strong and stable with age by improving heat resistant properties and formability of the nitrogenous organic compound base fuels which are poor compared with the metallic compound azide of an inorganic matter.

Abstract: Oxynitride glass whose composition is represented by Al—Si—O—N or M—Al—Si—O—N (where M denotes Ca, Mg, or rare earth element), wherein the content of O and N as non-metallic components is in the range of O eq %<N≦30 eq %, with O+N=100 eq %, the content of M, Al, and Si as metallic components is in the range of 20 eq %≦Al≦30 eq % and 70 eq %≦Si≦80 eq %, respectively, with Al+Si=100 eq % (if M does not exist) and the content of M, Al, and Si as metallic components is within the hatched area in the composition diagrams shown in FIGS. 1 to 3, if M is Ca, Mg, or rare earth metal, or within the hatched area in the composition diagrams shown in FIGS. 4 to 8, if the content of N is in the range of 5 eq %≦N≦25 eq %.