Patents by Inventor Moriz Jelinek
Moriz Jelinek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145247Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.Type: ApplicationFiled: January 9, 2024Publication date: May 2, 2024Inventors: Moriz JELINEK, Michael HELL, Caspar LEENDERTZ, Kristijan Luka MLETSCHNIG, Hans-Joachim SCHULZE
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Patent number: 11908694Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.Type: GrantFiled: December 18, 2020Date of Patent: February 20, 2024Assignee: Infineon Technologies AGInventors: Moriz Jelinek, Michael Hell, Caspar Leendertz, Kristijan Luka Mletschnig, Hans-Joachim Schulze
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Publication number: 20230352531Abstract: A method of manufacturing a vertical power semiconductor device includes forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms, and forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks, wherein a first impurity peak of the plurality of impurity peaks is set a larger concentration than a second impurity peak of the plurality of impurity peaks, wherein the first impurity peak includes hydrogen and the second impurity peak includes helium.Type: ApplicationFiled: July 12, 2023Publication date: November 2, 2023Inventors: Hans-Joachim Schulze, Christian Jaeger, Moriz Jelinek, Daniel Schloegl, Benedikt Stoib
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Publication number: 20230317456Abstract: A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. Semiconductor device elements are formed in the semiconductor body by processing the semiconductor body at the first surface. A wiring area is formed over the first surface of the semiconductor body. The semiconductor body is attached to a carrier via the wiring area. Thereafter, ions are implanted through the second surface into the semiconductor body. The ions are ions of a doping element, or ions, which induce doping by complex formation, or ions of a heavy metal. A surface region of the semiconductor body at the second surface is irradiated with a plurality of laser pulses. Thereafter, the carrier is removed from the semiconductor body.Type: ApplicationFiled: March 29, 2023Publication date: October 5, 2023Inventors: Moriz Jelinek, Hans-Joachim Schulze, Werner Schustereder, Daniel Schlögl, Francisco Javier Santos Rodriguez
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Publication number: 20230299147Abstract: Disclosed is a method that includes: measuring at least one characteristic of a superjunction region of a SiC superjunction device, wherein the superjunction region is arranged in a semiconductor body and comprises a plurality of first regions of a first doping type and a plurality of second regions of a second doping type complementary to the first doping type; and generating dopant like defects of one doping type in the superjunction region in a doping process. At least one parameter of the doping process is adjusted dependent on the at least one measured characteristic. The doping process includes an implantation process in which particles are implanted into the semiconductor body to form crystal defects in the semiconductor body in the superjunction region, and an annealing process in order to form the dopant like defects based on the crystal defects.Type: ApplicationFiled: March 15, 2023Publication date: September 21, 2023Inventors: Moriz JELINEK, Jens Peter KONRATH, Hans-Joachim SCHULZE, Andre Rainer STEGNER
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Patent number: 11764063Abstract: A silicon carbide substrate is provided that includes a drift layer of a first conductivity type and a trench extending from a main surface of the silicon carbide substrate into the drift layer. First dopants are implanted through a first trench sidewall of the trench. The first dopants have a second conductivity type and are implanted at a first implant angle into the silicon carbide substrate, wherein at the first implant angle channeling occurs in the silicon carbide substrate. The first dopants form a first compensation layer extending parallel to the first trench sidewall.Type: GrantFiled: May 28, 2020Date of Patent: September 19, 2023Assignee: Infineon Technologies AGInventors: Hans-Joachim Schulze, Romain Esteve, Moriz Jelinek, Caspar Leendertz, Werner Schustereder
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Patent number: 11742384Abstract: A vertical power semiconductor device is proposed. The vertical power semiconductor device includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction. The vertical power semiconductor device further includes a drift region in the semiconductor body. The drift region includes platinum atoms. The vertical power semiconductor device further includes a field stop region in the semiconductor body between the drift region and the second main surface. The field stop region includes a plurality of impurity peaks. A first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks. The first impurity peak includes hydrogen and the second impurity peak includes helium.Type: GrantFiled: March 30, 2021Date of Patent: August 29, 2023Assignee: Infineon Technologies AGInventors: Hans-Joachim Schulze, Christian Jaeger, Moriz Jelinek, Daniel Schloegl, Benedikt Stoib
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Publication number: 20230215729Abstract: A method of manufacturing a metal silicide layer comprises performing laser thermal annealing of a surface region of a silicon carbide (SiC) substrate, exposing a surface of a thus obtained silicon layer, depositing a metal layer above the exposed silicon layer, and/or thermally treating a stack of layers, comprising the silicon layer and the metal layer, to form a metal silicide layer. Alternatively and/or additionally, the method may comprise depositing a silicon layer above a SiC substrate, depositing a metal layer, and/or performing laser thermal annealing of the SiC substrate and a stack of layers above the SiC substrate to form a metal silicide layer, wherein the stack of layers comprises the silicon layer and the metal layer. Moreover, a semiconductor device is described, comprising a SiC substrate, a metal silicide layer, and a polycrystalline layer in direct contact with the SiC substrate and the metal silicide layer.Type: ApplicationFiled: December 29, 2022Publication date: July 6, 2023Inventors: Hans-Joachim SCHULZE, Florian Markus GRASSE, Moriz JELINEK, Axel KÖNIG, Gregor LANGER, Bemhard LEITL, Kristijan Luka MLETSCHNIG, Werner SCHUSTEREDER
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Publication number: 20230125859Abstract: A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. The method includes implanting protons through the second surface into the semiconductor body. The method further includes implanting ions through the second surface into the semiconductor body. The ions are ions of a non-doping element having an atomic number of at least 9. Thereafter, the method further includes processing the semiconductor body by thermal annealing.Type: ApplicationFiled: October 27, 2022Publication date: April 27, 2023Inventors: Daniel Schlögl, Hans-Joachim Schulze, Moriz Jelinek, Francisco Javier Santos Rodriguez
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Publication number: 20230083106Abstract: A method includes orienting a silicon carbide layer to a first crystal channel direction relative to a first ion beam and implanting phosphorous into the silicon carbide layer using the first ion beam to define a first doped region in the silicon carbide layer. A deviation angle between the first crystal channel direction and the first ion beam is less than ±1° and the first crystal channel direction comprises a <0001> direction or a <11-23> direction.Type: ApplicationFiled: September 16, 2021Publication date: March 16, 2023Inventors: Moriz JELINEK, Paul ELLINGHAUS, Axel KOENIG, Caspar LEENDERTZ, Hans-Joachim SCHULZE, Werner SCHUSTEREDER
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Patent number: 11569392Abstract: A power semiconductor diode includes a semiconductor body having first and second main surfaces opposite to each other along a vertical direction. A drift region of a second conductivity type is arranged between an anode region of a first conductivity type and the second main surface. A field stop region of the second conductivity type is arranged between the drift region and the second main surface. A dopant concentration profile of the field stop region along the vertical direction includes a maximum peak. An injection region of the first conductivity type is arranged between the field stop region and the second main surface, with a pn-junction between the injection and field stop regions. A cathode contact region of the second conductivity type is arranged between the field stop region and the second main surface. A first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.Type: GrantFiled: September 3, 2021Date of Patent: January 31, 2023Assignee: Infineon Technologies AGInventors: Hans-Joachim Schulze, Christian Jaeger, Moriz Jelinek, Daniel Schloegl, Benedikt Stoib
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Patent number: 11552172Abstract: First dopants are implanted through a larger opening of a first process mask into a silicon carbide body, wherein the larger opening exposes a first surface section of the silicon carbide body. A trench is formed in the silicon carbide body in a second surface section exposed by a smaller opening in a second process mask. The second surface section is a sub-section of the first surface section. The larger opening and the smaller opening are formed self-aligned to each other. At least part of the implanted first dopants form at least one compensation layer portion extending parallel to a trench sidewall.Type: GrantFiled: July 11, 2020Date of Patent: January 10, 2023Assignee: Infineon Technologies AGInventors: Caspar Leendertz, Romain Esteve, Moriz Jelinek, Anton Mauder, Hans-Joachim Schulze, Werner Schustereder
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Publication number: 20220406947Abstract: A semiconductor device includes: a drift region of a first conductivity type arranged between first and second surfaces of a semiconductor body; a first region of the first conductivity type at the second surface; a second region of a second conductivity type adjacent the first region at the second surface; a field stop region of the first conductivity type between the drift region and second surface; and a first electrode on the second surface directly adjacent to the first region in a first part of the second surface and to the second region in a second part of the second surface. The field stop region includes first and second sub-regions. Over a predominant portion of the first part of the second surface, the second sub-region directly adjoins the first region and includes dopants of the second conductivity type that partially compensate dopants of the first conductivity type.Type: ApplicationFiled: June 13, 2022Publication date: December 22, 2022Inventors: Benedikt Stoib, Moriz Jelinek, Marten Mueller, Daniel Schloegl, Hans-Joachim Schulze, Holger Schulze
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Publication number: 20220406600Abstract: A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped first region at the second surface; and an n-doped field stop region between the drift and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a reference value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the reference value. A maximum concentration value in the second sub-region is at most 20% larger than the reference value.Type: ApplicationFiled: June 10, 2022Publication date: December 22, 2022Inventors: Moriz Jelinek, Thomas Waechtler, Bernd Bitnar, Daniel Schloegl, Hans-Joachim Schulze, Oana Julia Spulber, Benedikt Stoib, Christian Krueger
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Publication number: 20220085215Abstract: A power semiconductor diode includes a semiconductor body having first and second main surfaces opposite to each other along a vertical direction. A drift region of a second conductivity type is arranged between an anode region of a first conductivity type and the second main surface. A field stop region of the second conductivity type is arranged between the drift region and the second main surface. A dopant concentration profile of the field stop region along the vertical direction includes a maximum peak. An injection region of the first conductivity type is arranged between the field stop region and the second main surface, with a pn-junction between the injection and field stop regions. A cathode contact region of the second conductivity type is arranged between the field stop region and the second main surface. A first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.Type: ApplicationFiled: September 3, 2021Publication date: March 17, 2022Inventors: Hans-Joachim Schulze, Christian Jaeger, Moriz Jelinek, Daniel Schloegl, Benedikt Stoib
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Patent number: 11264459Abstract: A power semiconductor device includes a semiconductor body having front and back sides. The semiconductor body includes drift, field stop and emitter adjustment regions each of a first conductivity type. The field stop region is arranged between the drift region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the drift region. The emitter adjustment region is arranged between the field stop region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the field stop region. The semiconductor body has a concentration of interstitial oxygen of at least 1E17 cm?3. The field stop region includes a region where the dopant concentration is higher than that in the drift region at least by a factor of three. At least 20% of the dopants of the first conductivity type in the region are oxygen-induced thermal donors.Type: GrantFiled: December 12, 2019Date of Patent: March 1, 2022Assignee: Infineon Technologies AGInventors: Roman Baburske, Moriz Jelinek, Franz-Josef Niedernostheide, Frank Dieter Pfirsch, Christian Philipp Sandow, Hans-Joachim Schulze
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Patent number: 11195695Abstract: An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.Type: GrantFiled: August 24, 2018Date of Patent: December 7, 2021Assignee: Infineon Technologies AGInventors: Moriz Jelinek, Michael Brugger, Hans-Joachim Schulze, Werner Schustereder, Peter Zupan
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Publication number: 20210320174Abstract: A vertical power semiconductor device is proposed. The vertical power semiconductor device includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction. The vertical power semiconductor device further includes a drift region in the semiconductor body. The drift region includes platinum atoms. The vertical power semiconductor device further includes a field stop region in the semiconductor body between the drift region and the second main surface. The field stop region includes a plurality of impurity peaks. A first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks. The first impurity peak includes hydrogen and the second impurity peak includes helium.Type: ApplicationFiled: March 30, 2021Publication date: October 14, 2021Inventors: Hans-Joachim Schulze, Christian Jaeger, Moriz Jelinek, Daniel Schloegl, Benedikt Stoib
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Method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate
Patent number: 11127839Abstract: A method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate is described. The method includes: generating the trench in the semiconductor substrate; generating an oxide layer over opposing sidewalls of the trench; damaging at least a portion of the oxide layer by ion implantation; coating the oxide layer with an etching mask; generating at least one opening in the etching mask adjacent to one of the opposing sidewalls; and partly removing the oxide layer by etching the oxide layer beneath the etching mask down to an etching depth at the one of the opposing sidewalls by introducing an etching agent into the opening.Type: GrantFiled: December 20, 2019Date of Patent: September 21, 2021Assignee: Infineon Technologies AGInventors: Moriz Jelinek, Kang Nan Khor, Armin Schieber, Michael Stadtmueller, Wei-Lin Sun -
Publication number: 20210193435Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.Type: ApplicationFiled: December 18, 2020Publication date: June 24, 2021Inventors: Moriz JELINEK, Michael HELL, Caspar LEENDERTZ, Kristijan Luka MLETSCHNIG, Hans-Joachim SCHULZE