Abstract: The present invention relates to imaging systems that generally include at least a first substrate, on which a charge coupled device imaging sensor array is formed, and a second substrate on which readout circuitry is formed. Information related to the amount of light incident on pixels included in the imaging sensor array is passed to the readout circuitry as a voltage signal over an interconnection between the imaging sensor array and the readout circuitry. Accordingly, the readout circuitry may sample the output of the imaging sensor array multiple times. The system allows different processes to be used for forming the imaging sensor array and the readout circuitry, while also supporting multiple samples of information provided by the imaging sensor array.

Abstract: A CCD has a floating diffusion for receiving charge packets to be sensed, a reset diffusion connected to a reference potential level and a reset channel region between the floating diffusion and the reset diffusion. A first reset gate is positioned over a first segment of the reset channel region for controlling the conductivity of the first segment in accordance with the potential of the first reset gate, and a second reset gate is positioned over a second segment of the reset channel region between the first reset gate and the reset diffusion for controlling the conductivity of the second segment in accordance with the potential of the second reset gate.

Abstract: A semiconductor device, such as a back side illuminated CCD, is fabricated by forming an insulating layer over the front side of a body of semiconductor material, depositing a layer of high resistivity material over the front side of the insulating layer, patterning a portion of the layer of high resistivity material to form a long and narrow trace, and attaching a support member to the front side of the insulating layer. In the case of a back side illuminated CCD, the patterning of the layer of high resistivity material advantageously forms a long and narrow trace substantially confined to a peripheral area of the front side of the insulating layer and the semiconductor material is removed from the corresponding peripheral area of the back side of the insulating layer, leaving a plateau of semiconductor material that does not extend over the area that contains the long and narrow trace.

Abstract: An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an insulating layer surrounding the semiconductor plateau. A front side bus at the front side of the insulating layer is connected to the electrode structure. The front side bus extends over an elongate aperture in the insulating layer and is connected through the aperture to a back side bus over substantially the entire length of the front side bus.

Abstract: An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an insulating layer surrounding the semiconductor plateau. A front side bus at the front side of the insulating layer is connected to the electrode structure. The front side bus extends over an elongate aperture in the insulating layer and is connected through the aperture to a back side bus over substantially the entire length of the front side bus.

Abstract: A CCD comprises a sensing array and a readout register extending adjacent an edge of the sensing array. The readout register has first and second rows of transfer cells. The first row of transfer cells is between the sensing array and the second row. The transfer cells of the first row are of lower capacity than the transfer cells of the second row and are separated from the transfer cells of the second row by a potential barrier.

Abstract: The disclosed device and system enables the cell-based amplification of photo-e The disclop41 The detection device is realized by overlaying an amplifying semi-conductor structure, generally referred to as avalanche photo-diodes, on top of a typical prior-art charge coupled device structure. The disclosed arrangement is a hybrid of these two technologies with certain provisions which allow the two prior art technologies to function properly as a single integrated unit.

Abstract: An interferometer comprises an optical system for generating an interference pattern of a predetermined configuration in a focal plane of the interferometer, and a detector device for measuring the distribution of optical power over the focal plane. The detector device comprises a body of semiconductor material having first and second opposite main surfaces, one of which surfaces lies substantially in the focal plane of the interferometer. The body of semiconductor material has a region of a first conductivity type and a channel of a second, opposite conductivity type at the first surface thereof and bounded by the region of the first conductivity type. The configuration of the channel conforms substantially to the predetermined configuration of the interference pattern. The semiconductor material responds to electromagnetic radiation in a given spectral region by generating charge carriers. Charge carriers that are created in or diffuse into the channel are confined in the channel.

Abstract: A charge-coupled device for detecting spatial variation in the intensity of electromagnetic radiation comprises a body of semiconductor material that responds to electromagnetic radiation in a given spectral region by generating charge carriers. The body of semiconductor material has first and second sense volumes that are isolated from each other with respect to diffusion of charge carriers. A sense electrode structure overlies the sense volumes. First and second transfer regions are in communication with the first and second sense volumes respectively, and a transfer electrode structure overlies the transfer regions. A readout region has first and second zones in communication with the first and second transfer regions respectively and is connected to an output node. Charge can be accumulated in the sense volumes over an integration period and the resulting charge samples can be shifted separately through the transfer regions and applied to the output node.

Abstract: A semiconductor body is treated by providing a layer of dielectric material over a peripheral region of the front face of the body, mounting the body on a support member with the front face of the body in confronting relationship with the support member, and removing material of the body in the peripheral region, so as to expose at least a portion of the layer of dielectric material. A layer of metal is formed on the back face of the body and is connected to an electrical terminal.

Abstract: An integrated circuit is formed in a semiconductor die having a front face and a back face, the die having at least first and second functional regions. The first functional region comprises at least one zone of p-type material and at least one zone of n-type material that meets the zone of p-type material in a p-n junction. The integrated circuit comprises connection pads connected respectively to the zone of p-type material and the zone of n-type material, whereby those zones can be connected to an external circuit. At least one of the connection pads is electrically isolated from the second functional region of the integrated circuit. The integrated circuit is treated by mounting the die on a support member and removing material of the die so as to separate the functional regions of the die from each other.

Abstract: A device for detecting spatial variation in the intensity of electromagnetic radiation in a given spectral region comprises a body of semiconductor material that responds to electromagnetic radiation in the given spectral region by generating charge carriers. The body of semiconductor material has first and second charge collection regions separated by a barrier region that forms a potential barrier to the charge carriers in the charge collection regions. The device also comprises an electrode structure for establishing a predetermined potential in the charge collection regions, whereby charge carriers can be accumulated in the charge collection regions, and first and second output devices connected to the first and second charge collection regions respectively for extracting charge therefrom.

Abstract: A single phase, buried channel charge coupled device has a high conductivity layer overlying the pinned regions thereof and extending to the channel stop regions, thereby facilitating the transfer of charge carriers between the channel stop regions and the pinned regions in order that the potential profile underlying said pinned regions may be more readily maintained. Extension of that high conductivity layer over the channel gate electrodes also facilitates the transmission of clocking voltages to the channel gate electrodes and allows the device to operate with decreased power losses.

Abstract: An integrated circuit formed in a semiconductor die which has at least two distinct functional regions is treated by mounting the die by way of its front face on a support member, and subsequently removing die material by way of its back face so as to physically separate the functional regions of the die from each other.

Abstract: A charge-coupled device package comprises a substrate of dielectric material and a charge-coupled device die mounted on one main face of the substrate. The substrate is placed in heat exchange relationship with a cold sink, such as a bath of LN.sub.2. A temperature sensor senses the temperature at a location on the main face that is in close proximity ot the die. A film resistor is adhered to the opposite main face of the substrate and receives a current that depends upon the temperature sensed by the sensor.

Abstract: A single phase, buried channel charge coupled device has a high conductivity layer overlying the pinned regions thereof and extending to the channel stop regions, thereby facilitating the transfer of charge carriers between the channel stop regions and the pinned regions in order that the potential profile underlying said pinned regions may be more readily maintained. Extension of that high conductivity layer over the channel gate electrodes also facilitates the transmission of clocking voltages to the channel gate electrodes and allows the device to operate with decreased power losses.